• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.177-181
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• 2003

Ultra-thin films of amphiphillic squarylium dye were prepared on the hydrophillic substrate by Langmuir-Blodgett(LB) technique. In this study, the photoelectric properties of a amphiphillic squarylium dye LB film was investigated. The visible light(${\lambda}$ = 684nm ) of xenon lamp was illuminated on the amphiphillic squarylium dye LB films and light absorptivity and photoconductivity were observed. The photoconductivity was nearly constant regardless of nominal layer number. The photoelectric properties of the amphiphillic squarylium dye LB films with bottom electrode showed better than that top electrode.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.58-68
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• 1995

Polysilicon capacitors with pyrogenic oxide and TEOX oxide as insulators were fabricated to develop capacitors which can be applied to analog CMOS IC, and the characteristics of the capacitors were compared with each other. The morphology of bottom polysilicon in pyrogenic oxide capacitor is degraded due to the generaged protuberances of the polysilicon grain during oxidataion. The polysilican capacitor with pyrogenic oxide of 57 nm thickness showed that the effective potential barrier height of 0.45 eV is much less than that of MOS capacitor (3.2 eV)when the top electrode is biased with a positive volgate. The morphology of the polysilicon capacitor with TEOS oxide, however, was not degraded during oxide deposition by LPCVD. The polysilicon capacitor with TEOS oxide of 54 nm thickness showed the effective potential barrier height of 1.28 eV when the top electrode is biased with a negative voltage. Therefore, it is concluded that the polysilicon capacitor with TEOS oxide is more applicable to analog CMOS IC than the pyrogenic oxide polysilicon capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.605-608
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• 1999

We report investigations on a Pentacene thin film as a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and Al electrode was deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by the three-terminal contact resistance methods, as the results contact resistance between pentacene films and the Aluminium electrode is 5.064G$\Omega$. The Al contact with the pentacene shows the bottom contact resistance. From the current-voltage characteristics, electrical conductivity of the Pentacene film is found as ~ 10$^{-4}$ /cm. physical characterization of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1865-1867
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• 2005

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.83-87
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• 2015

In this paper, we fabricated a low-cost glucose sensor with a simpler structure and fabrication process than the existing glucose sensor. The currently used glucose sensor has a three-layer structure with upper, middle, and bottom plates; here, we fabricated a single-layer glucose sensor using only a printing and dispensing process. We successfully fabricated the glucose sensor using a simple method involving the formation of an electrode and insulator layer through a 2- or 3-step printing process on plastic or paper film, followed by the dispensing of glucose oxidase solution on the electrode. Cyclic voltammetry (CV) and cyclic amperometry (CA) measurements were used to evaluate the characteristics of the fabricated single-layer glucose sensor. Also, its sensitivity was analyzed through glucose-controlled blood measurements. Hence, a low-cost single-layer glucose sensor was fabricated with evaluation of its characteristics demonstrating that it has useful application in medicine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.305-310
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• 2004

We have studied the optimal phase retardation value of a homogeneously aligned liquid crystal (LC) driven by fringe-field when using the LC with positive dielectric anisotropy. In general, the transmittance of a homogeneous aligned LC cell under crossed polarizer is maximum when a twist angle of LC by in-plane rotation is 45$^{\circ}$ with polarizer and the cell retardation becomes λ/2. However, the device using the LC with positive dielectric anisotropy does not follow this since the degree of rotation of the LC is dependent on electrode position and in addition the LCs tilt up along the fringe-field. At the center of common and pixel electrode, the LC is most twisted around a middle position of a cell whereas at the edge position of pixel electrode, the LC is most twisted near bottom surface of a cell. Consequently, the optimal phase retardation of the device becomes much larger than λ/2 and the transmittance can be described using the combination of the in-plane switching and twisted nematic mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.101-104
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• 2004

In this study AlN/Al thin films were prepared at various conditions, such as $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AlN/Al thin films as function of Al electrode surface roughfness. The optimal processing conditions for Al electrode were found at substrate temperature of $300^{\circ}C$, sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AlN/Al/SiO_2/Si$ thin film about 4 degree.