• BMB Reports
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• v.41 no.9
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• pp.657-663
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• 2008

The present study was undertaken to investigate the protective role of taurine (2-aminoethanesulfonic acid) against cadmium (Cd) induced oxidative stress in murine erythrocytes. Cadmium chloride ($CdCl_2$) was chosen as the source of Cd. Experimental animals were treated with either $CdCl_2$ alone or taurine, followed by Cd exposure. Cd intoxication reduced hemoglobin content and the intracellular Ferric Reducing/Antioxidant Power of erythrocytes, along with the activities of antioxidant enzymes, glutathione content, and total thiols. Conversely, intracellular Cd content, lipid peroxidation, protein carbonylation, and glutathione disulphides were significantly enhanced in these cells. Treatment with taurine before Cd intoxication prevented the toxin-induced oxidative impairments in the erythrocytes of the experimental animals. Overall, the results suggest that Cd could cause oxidative damage in murine erythrocytes and that taurine may play a protective role in reducing the toxic effects of this particular metal.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.353-359
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• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

• Journal of the Korean Chemical Society
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• v.22 no.1
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• pp.19-24
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• 1978

Novel nickel(II) complexes of the type Ni(IBA-NH)(IBA-NR), where IBA-NH and IBA-NR (R=H, methyl, ethyl, n-propyl, iso-propyl, n-butyl or benzyl) represent isonitrosobenzoylacetone imine and its N-alkyl derivative respectively, have been prepared. The ir, nmr, and electronic spectra and magnetic moment of the nickel(II) complexes have been studied. It has been determined that the isonitroso group of IBA-NH coordinates to nickel through the oxygen to form 6-membered chelate ring and that of IBA-NR coordinates to nickel through the nitrogen to form 5-membered ring in square-planar Ni(IBA-NH) (IBA-NR). The coordination manner of the ligands is similar to that of isonitrosoacetylacetone imines obtained by Bose, et al.

• Journal of the Korean Chemical Society
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• v.26 no.1
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• pp.31-35
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• 1982

Novel palladium(II) complexes of the type Pd(IBA-NH)(IBA-NH') and Pd(IBA-NR)2, where IBA-NH and IBA-NR (R: methyl, ethyl, n-propyl, n-butyl, benzyl) represent isonitrosobenzoylacetone imine and its N-alkyl derivatives respectively, have been prepared. The ir, nmr, and electronic spectra of the palladium(Ⅱ) complexes have been studied. It has been determined that the isonitroso group of IBA-NH coordinates to palladium through the oxygen to form 6-membered chelate ring and that of IBA-NH' coordinates to palladium through the nitrogen to form 5-membered ring in square-planar Pd(IBA-NH)(IBA-NH') and it also has been determined that the isonitroso groups of two IBA-NR coordinates to palladium through the nitrogen to form 5-membered rings in square-planar Pd$(IBA-NR)_2$. The coordination manner of the ligands is similar to that of isonitrosoacetylacetone imines obtained by Bose, et $al.^5$.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].