• Journal of Environmental Science International
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• v.32 no.6
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• pp.465-475
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• 2023

In this study, we evaluated the treatment efficiency of livestock wastewater by altering the current density using boron-doped diamond (BDD) electrodes. As the current density was adjusted from 10 to 35 mA/cm2, the removal efficiency of organic matter increased from 22.2 to 71.5%. Similar to that of organic matter, the removal efficiency of color increased with increasing current density up to 85.7%, indicating a higher removal efficiency for color than that of organic matter. The removal efficiency of ammonia nitrogen increased from 14.6 to 53.3% as the current density increased, but it was lower than that of organic matter. In addition, the removal of organic matter, color, and ammonia nitrogen followed first-order reactions, according to the reaction rate analysis. The energy consumption ranged from 4.87 to 8.33 kWh/kg COD, and it was found that the organic matter removal efficiency was more efficient at high current densities. Based on various analyses, the optimal current density was 20 mA/cm2, and the corresponding energy consumption was 6.824 kWh/kg COD.

• Carbon letters
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• v.1 no.2
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• pp.64-68
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• 2000

This paper describes the mechanical properties and oxidation resistance of carbon fibers with and without additions of boron oxide additives, and describes the changes in the properties resulting from increased heat treatment temperature (HTT) of the fibers. Carbon fibers in this experiment were heat treated up to $2800^{\circ}C$ each with and without boron oxide treated on the surface of fibers. In the case of boron oxide added carbon fibers, they do not show the improvement of tensile strength and modulus compared to those of no treated carbon fibers below $2200^{\circ}C$ since they are doped substitutionally with boron above $2600^{\circ}C$, which accelerate the graphitization of carbon fibers. Boron oxide implanted carbon fibers showed high resistance to oxidation, however, when carbon fibers were heat treated below $2200^{\circ}C$, they showed almost the same trend of air oxidation.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.144.2-144
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• 2003

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.458-464
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• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.662-667
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• 2013

The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on $p^+/n^+$ source and drain region. However these types of wiggling profile is only observed at the $n^+$ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.55-58
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• 2022

Carbon-based doping to MgB₂ superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB₂ superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB₂ bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB₂ possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB₂ lattice. Also, high-field J_c for the doped MgB₂ is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

• Analytical Science and Technology
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• v.13 no.6
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• pp.705-711
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• 2000

We have studied the structural characterization, surface morphology and electrical properties for boron dopped polyacene anode material from phenolic resin for lithium secondary battery. The boron dopped anode material were characterized as boron contents of 5, 10, 15 and 20%, respectively. From the X-ray results, the all kinds of compounds were observed for the diffraction patterns for typical amorphous carbons. The SEM morphology showed formation of semi spherical granule for the boron dopped compounds. As the result of the electrical charge/discharge and impedance data, the 10 and 15% boron dopped materials showed good properties on the ions and electron transfer effect of battery.

• New & Renewable Energy
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• v.8 no.1
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.568-575
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• 1996

The double sided buried contact(DSBC)silicon solar cell processing requires doping of the rear and front grooves with boron and phosphorus respectively. The successful electroless plating of these grooves with the appropriate metals haave been found to depend on the boron conditions for the rear fingers. However, an increased understanding of electroless plating has removed this restriction. Thus the DSBC cells using different boron conditions can be electrolessly plated with ease. This paper presents the recent work done on metallizing the double sided buried contact silicon solar cells with heavily doped boron grooves. The cells results indicate that, the heavier the boron grooves, the poorer the cell performance because of the probable higher metal contact recombination associated with boron grooves.