• Proceedings of the KWS Conference
• /
• 2009.11a
• /
• pp.197-201
• /
• 2009

A lot of work is carried out concerning to acicular ferrite formation in the weld metal of high strength and low-alloy steel. Those results are suggesting that oxides that contain titanium elements provides nucleation site of intragranular ferrite, referred as acicular ferrite. Thus, when intragranular ferrite is expected to form in heat-affected zone, oxide containing titanium element should be formed in the steel. However, normal steel is deoxidized by using aluminum element (Al-killed steel) with little oxygen content. It means almost oxygen is deoxidized with aluminum elements. In the present work, in order to form the acicular ferrite in the heat affected zone, with the same concept in the case of weld metal, the steel deoxidized with titanium element (titanium killed-steel) is prepared and the acicular ferrite formation is observed in detail by using laser-conforcal microscopy technique. The confocal technique makes it possible that the morphological change along the phase transformation from austenite to ferrite is in-situ tracked. Thus, the inclusion that stimulated the ferrite nucleation could be directly selected from the observed images, in the HAZ of the Ti-killed steel. The chemical composition of the selected inclusion is analyzed and the nucleation potential is discussed by changing the nucleation site with boron element. The potency for the ferrite nucleation is summarized and the existence of effective and ineffective manganese sulfide for nucleation is made clear.

• Journal of the Korean Ceramic Society
• /
• v.36 no.3
• /
• pp.319-324
• /
• 1999

기존의 고상 반응법에 의해 합성된 YNbO4 : Bi 형광체의 발광특성을 개선하기 위하여 B2O3 융체 첨가법으로 형광체를 합성하고, 빛발광(PL) 및 저전압 음극선발광(CL)을 측정하였다. PL 및 CL 모두 415~440 nm 영역에서 강한 청색 발광 스펙트럼을 나타냈으며, 고상 반응의 경우와 마찬가지로 Y/Nb 비율이 화학 양론상의 1:1인 경우보다 결함구조를 인위적으로 조절한 51/49나 54/46에서 최대의 발광강도를 보였다. 한편, 고상 반응에서는 125$0^{\circ}C$에서 4시간 열처리하는 것이 최대의 발광효과를 나타냈으나, B2O3융제를 첨가하고 110$0^{\circ}C$에서 열처리한 시료가 결정성이 좋고 입자의 크기 및 형태가 균일하여 PL뿐만 아니라 CL에서도 우수한 발광특성을 보였다. B2O3융제를 첨가하는 방법으로 열처리 온도를 낮추고 입자크기와 형태를 조절하여 형광체의 휘도를 개선할 수 있었다.

• The Magazine of the IEIE
• /
• v.24 no.6
• /
• pp.38-49
• /
• 1997

0.4mm Resign Rule의 Super Low Power Dissipation, Low Voltage. Operation-5- Full CMOS SRAM Cell을 개발하였다. Retrograde Well과 PSL(Poly Spacer LOCOS) Isolation 공정을 사용하여 1.76mm의 n+/p+ Isolation을 구현하였으며 Ti/TiN Local Interconnection을 사용하여 Polycide수준의 Rs와 작은 Contact저항을 확보하였다. p-well내의 Boron이 Field oxide에 침적되어 n+/n-well Isolation이 취약해짐을 Simulation을 통해 확인할 수 있었으며, 기생 Lateral NPN Bipolar Transistor의 Latch Up 특성이 취약해 지는 n+/n-wellslze는 0.57mm이고, 기생 Vertical PNP Bipolar Transistor는 p+/p-well size 0.52mm까지 안정적인 Current Gain을 유지함을 알 수 있었다. Ti/TiN Local Interconnection의 Rs를 Polycide 수준으로 낮추는 것은 TiN deco시 Power를 증가시키고 Pressure를 감소시킴으로써 실현할 수 있었다. Static Noise Margin분석을 통해 Vcc 0.6V에서도 Cell의 동작 Margin이 있음을 확인할 수 있었으며, Load Device의 큰 전류로 Soft Error를 개선할수 있었다. 본 공정으로 제조한 1M Full CMOS SRAM에서 Low Vcc margin 1.0V, Stand-by current 1mA이하(Vcc=3.7V, 85℃기준) 를 얻을 수 있었다.

• Korean Journal of Crystallography
• /
• v.12 no.3
• /
• pp.166-170
• /
• 2001

Dopants implanted in silicon substrate affect the reaction between cobalt and silicon substrate. Phosphorous, unlike boron and arsenic, suppressing the reaction between cobalt and silicon induces CoSi formation during a low temperature thermal treatment instead of CoSi₂formation. The CoSi layer should move to the silicon substrate to fill the vacant volume that is generated in the silicon substrate due to the silicon out-diffusion into the cobalt/CoSi interface. The movement of CoSi at gate sidewall spacer region is suppressed by a cohesion between gate oxide and CoSi layers, resulting in a void formation at the gate sidewall spacer edge.

• Journal of the Korean Applied Science and Technology
• /
• v.24 no.4
• /
• pp.369-376
• /
• 2007

우리는 마이카, boron nitride, bismuthoxychloride와 같은 판상 분체에 ZnO 나노입자를 코팅한 고 기능성 무기 분체를 합성하였다. 본 실험에서 우리는 수열침전법을 이용하여 합성 분체를 합성하였다. 출발물질은 $ZnCl_2$를 사용하였고 침전제로는 hexamethylenetetramine(HMT)와 urea를 사용하였다. 본 실험의 반응변수로는 출발물질의 농도, 침전제 및 반응온도를 변화시켜 실험하였다. 합성물의 형태, 결정성 및 UV-차단능은FE-SEM, XRD, FT-IR, TGA-DTA, in vitro SPF 테스트를 활용해 분석하였다. 본 실험의 결과, 나토입자 크기를 갖는 ZnO는 동일한 최적의 합성조건하에서 다양한 판상 분체의 종류에 관계없이 균일하게 코팅되었다.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1612-1614
• /
• 2002

본 논문에서는 엑시머 레이저 조사에 의한 이온 농도의 분포 변화를 알아보기 위해 붕소 이온이 선택적으로 주입된 비정질 실리콘 박막 위에 XeCl (${\lambda}$=308nm) 엑시머 레이저를 조사하여 붕소이온의 수평 확산 현상을 관찰하였다. 도핑 농도의 분포를 알아보기 위해 불산/질산 용액에 의한 고농도 도핑 영역의 습식 식각을 이용하여 약 $10^{18}/cm^3$ 이하의 붕소이온을 가지는 실리콘 박막의 형태를 전자주사 현미경을 이용해서 관찰하였다. 실험 결과, $200mJ/cm^2$의 레이저 에너지가 조사될 경우, 약 100nm의 수평 확산이 일어났음을 확인 할 수 있었다.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.900-902
• /
• 1999

This paper deals with the interrupting characteristics of fuses element in different media of arc extinguisher. Aluminum hydro-oxide, boron nitride, silica and there size have been investigated here for their prospects as filling media in heavy current, high breaking capacity fuses. The result of these study are compared with those on silica sand at high current. This study demonstrates that silica sand is far superior filler in fuses for heavy current interrupting then the compound tested.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.7 no.5
• /
• pp.29-37
• /
• 1998

In recent years, grinding techniques for precision machining of stainless steel used in shaft, screw parts and clear value have been improved by using the superabrasive wheel and precision grinding machine. The completion of optimum dressing of superabrasive wheel makes possible the effective precision grinding of stainless steel. However, the present dressing system cannot have control of optimum dressing of the superabrasive wheel. In this study, a new system and the grinding mechanism of optimum in-process dressing of superabrasive wheel. Therefore, the optimum in-process electrolytic dressing is a good method to obtain the efficiency and mirror-like grinding of stainless steel (STS304)

• Journal of Powder Materials
• /
• v.1 no.2
• /
• pp.135-144
• /
• 1994

Silicon carbide powder was prepared from mixtures of Sangdong silica sand and carbon black by SHS (Self propagating High temperature Synthesis) method which utilizes magnesiothermic reduction of silica. In the powder preparation process, the reacted powder was leached by chloric acid to remove the magnesium oxide and was subsequently roasted to remove free carbon. The impurities were mostly eliminated by hot acid treatment. The resultant SiC powder showed the mean particle size of 0.22 ${\mu}{\textrm}{m}$ and the specific surface area of $66.55 m^2/g$. The SiC powder was mixed with 1 wt% of boron and of carbon to increase densification rate. The mixed powder was pressed and sintered pressurelessly at $2100^{\circ}C$ for 30 min in argon gas. The sintered body showed the hardness of $2550 kg{\cdot}f/mm^2$ and the fracture toughness, KIC of $3.47 MN/m^{3/2}$.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.189-192
• /
• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.