• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2153-2162
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• 2024

The purpose of this study is to develop a high-energy neutron shielding material applied in proton therapy environment. Composite shielding material consisting of 10.00 wt% boron carbide particles (B₄C), 13.64 wt% surface-modified cross-linked polyethylene (PE), and 76.36 wt% tungsten particles were fabricated by hot-pressure sintering method, where the optimal ratio of the composite is determined by the shielding effect under the neutron field generated in typical proton therapy environment. The results of Differential Scanning Calorimetry measurements (DSC) and tensile experiment show that the composite has good thermal and mechanical properties. In addition, the high energy-neutron shielding performance of the developed material was evaluated using cyclotron proton accelerator with 100 MeV proton. The simulation shows a 99.99% decrease in fast neutron injection after 44 cm shielding, and the experiment result show a 99.70% decrease. Finally, the shielding effect of replacing part of the shielding material of the proton therapy hall with the developed material was simulated, and the results showed that the total neutron injection decreased to 0.99‰ and the neutron dose reduced to 1.10‰ before the enhanced shielding. In summary, the developed material is expected to serve as a shielding enhancement material in the proton therapy environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.181-184
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• 2009

The hot press farming process, which is the press hardening of steel parts using cold dies, can utilize both ease of shaping and high strength due to the hardening effect of rapid quenching during the pressing. In this study, a thermo-elastoplastic analysis of the hot press forming process using the finite element method was performed in order to investigate the deformation behavior and temperature history during the process and the mechanical properties of the pressed parts.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.367-370
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• 2009

Recently, ultra high strength products can be manufactured by the hot press forming process of Boron steel in automotive and electronics industries. In order to get high strength, the hot press forming should be accompanied by quenching process inducing phase transformation. In the study, the heat conductive die and the cooling channel were designed by the numerical simulation and the effect of three different parameters were determined to improve cooling characteristics.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.294-297
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• 2000

Boron Phosphide films were deposited on the glass substrate at low temperature, 550$^{\circ}C$, by the reaction of B$_2$H$\sub$6/ with PH$_3$ using CVD. N$_2$ was employed as carrier gas. The deposition rate was 1000${\AA}$/min and the refractive index of film was 2.6. The data of XRD show that the film has the preferred orientation of (1 0 1). The VIS spectrophotometer's data proved that the films are transparent in the visible range. Also, we performed AFM, FT-IR measurement. To investigate the annealing effect, the samples were annealed for 1hour, 3hours at 550$^{\circ}C$ and tested.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• Journal of Mechanical Science and Technology
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• v.17 no.11
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• pp.1638-1649
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• 2003

A study is made on the characterization of damage tolerance by spherical indentation in hardly coated layer structure with modest elastic modulus mismatch. A hard silicon nitride is prepared for the coating material and silicon nitride with 5wt% of boron nitride composites for underlayer. Hot pressing to eliminate the effect of interface delamination during the fracture makes strong interfacial bonding. The elastic modulus mismatch between the layers is not only large enough to suppress the surface crack initiation from the coating layer but sufficiently small to prevent the initiation of radial crack from the interface. The strength degradation of the layer structure after sphere contact indentation does not significantly occur, while the degradation of silicon nitride-boron nitride composite is critical at a high load and high number of contacts.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• 전기의세계
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• v.30 no.4
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.59-62
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds. The instability of the 4-88-4 defect generates the structural transformation into BNNTs with no defect at about 1500 K.