• Title/Summary/Keyword: boron compound

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Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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Photocatalytic Degradation of Quinol and Blue FFS Acid Using TiO2 and Doped TiO2

  • Padmini., E.;Prakash, Singh K.;Miranda, Lima Rose
    • Carbon letters
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    • v.11 no.4
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    • pp.332-335
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    • 2010
  • The photodegradation of the model compounds Quinol, an aromatic organic compound and Acid blue FFS, an acid dye of chemical class Triphenylmethane was studied by using illumination with UV lamp of light intensity 250W. $TiO_2$ and $TiO_2$ doped with Boron and Nitrogen was used as catalyst. The sol-gel method was followed with titanium isopropoxide as precursor and doping was done using Boron and Nitrogen. In photocatalytic degradation, $TiO_2$ and doped $TiO_2$ dosage, UV illumination time and initial concentration of the compounds were changed and examined in order to determine the optimal experimental conditions. Operational time was optimized for 360 min. The optimum dosage of $TiO_2$ and BN doped $TiO_2$ was obtained to be 2 $mgL^{-1}$ and 2.5 $mgL^{-1}$ respectively. Maximum degradation % for quinol and Blue FFS acid dye was 78 and 95 respectively, at the optimum dosage of BN-doped $TiO_2$ catalyst. It was 10 and 4% higher than when undoped $TiO_2$ catalyst was used.

Microstructure and Mechanical Properties of Ni3Al Matrix Composites with Fine Aluminum Oxide by PM Method

  • Han, Chang-Suk;Choi, Dong-Nyeok
    • Korean Journal of Materials Research
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    • v.28 no.9
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    • pp.495-498
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    • 2018
  • Intermetallic compound matrix composites have been expected to be established as high temperature structural components. $Ni_3Al$ is a representative intermetallic alloy, which has excellent ductility even at room temperature by adding certain alloying elements. $Ni_3Al$ matrix composites with aluminum oxide particles, which are formed by the in-situ reaction between the alloy and aluminum borate whiskers, are fabricated by a powder metallurgical method. The addition of aluminum borate whiskers disperses the synthetic aluminum oxide particles during sintering and dramatically increases the strength of the composite. The uniform dispersion of reaction synthesized aluminum oxide particles and the uniform solution of boron in the matrix seem to play an important role in the improvement in strength. There is a dramatic increase in strength with the addition of the whisker, and the maximum value is obtained at a 10 vol% addition of whisker. The $Ni_3Al$ composite with 10 vol% aluminum oxide particles $0.3{\mu}m$ in size and with 0.1 wt% boron powder fabricated by the conventional powder metallurgical process does not have such high strength because of inhomogeneous distribution of aluminum oxide particles and of boron. The tensile strength of the $Ni_3Al$ with a 10 vol% aluminum borate whisker reaches more than twice the value, 930 MPa, of the parent alloy. No third phase is observed between the aluminum oxide and the matrix.

Change in Microstructure and Coating Layer of Al-Si Coated Steel after Conductive Heating (Al-Si 도금강의 통전 가열에 따른 미세조직과 도금층 변화)

  • Jeong, Woo Chang
    • Journal of the Korean Society for Heat Treatment
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    • v.34 no.3
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    • pp.107-115
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    • 2021
  • Al-Si coated boron steel has been widely used as commercial hot stamping steel. When the steel is heated at 900~930℃ for 5 min in an electric furnace, thickness of the coating layer increases as a consequence of formation of intermetallic compounds and diffusion layer. The diffusion layer plays an important roll in blunting the propagation of crack from coating layer to base steel. Change in microstructure and coating layer of Al-Si coated boron steel after conductive heating with higher heating rate than electric furnace has been investigated in this study. Conductive-heated steel showed the martensitic structure with vickers hardness of 505~567. Both intermetallic compounds in coating layer and diffusion layer were not observed in conductive-heated steel due to rapid heating. It has been found that the conductive-heating consisting of rapid heating to 550℃ which is lower than melting point of Al-Si coating layer, slower heating to 900℃, and then 1 min holding at 900℃ is effective in forming intermetallic compound in coating layer and diffusion layer.

A Mono-Chelated Boron Complex as a New Blue Emission Layer in Organic Light Emitting Diodes

  • Jeong, Ji-Hoon;Rho, Hyeon-Hee;Kim, Jun-Ho;Ha, Yun-Kyung;Kim, Young-Sik;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.620-622
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    • 2004
  • In this study, a mono-chelated compound as novel blue light emitting material, $BPh_2$(pbi) (pbi = 2-(2-Pyridyl)benzimidazole) was synthesized Organic light emitting Diodes (OLEDs), which has a ITO/NPB(40 nm)/Boron(30 nm)/$Alq_3$(1 nm)/Liq(3 nm)/Al(150 nm) structure, has been fabricated. The maximum brightness of the device is up to about 900 cd/$m^2$ and 0.54 cd/A at 11.5 V. The EL peaks and CIE coordinates of our OLEDs is 457 nm and (0.26, 0.29), respectively.

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Characteristics on Boundary Layer and Formation Mechanism of c-BN Thin Films During Electron Assisted Hot Filament CVD Process (EAHFCVD법에 의한 c-BN 박막형성기구와 계면층의 특성에 관하여)

  • Choi, Yong;Choe, Jean-I.
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.1
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    • pp.89-93
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    • 2012
  • c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

Gas Generation by Burning Test of Cypress Specimens Treated with Boron Compounds (붕소 화합물로 처리된 편백목재 시험편의 연소시험에 의한 가스 발생)

  • Jin, Eui;Chung, Yeong-Jin
    • Applied Chemistry for Engineering
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    • v.29 no.4
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    • pp.413-418
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    • 2018
  • Cypress woods treated individually with boric acid (BA4), ammonium pentaborate (APB4), or BA4/APB4 additives were examined for combustion gases. Each of the specimens was painted with a 4 wt% solution of boron compounds three times. Dried at room temperature, the combustion gas was analyzed using a cone calorimeter (ISO 5660-1). Consequently, the second maximum oxygen consumption rate of the specimen treated with boron compounds was 0.1067 to 0.1246 g/s, which was 5.3 to 18.9%, respectively lower than that of the blank specimen. The specific extinction area of specimens treated with BA4 and APB4 was also 2.0 to 19.0% lower, respectively. However, treated with BA4/APB4 showed 21.2% higher than that of the blank specimen. The maximum carbon monoxide concentration of the specimens with boron compounds was reduced by 0 to 25%. It was estimated to be 1.6 to 2.2 times higher than the permissible exposure limits by Occupational Safety and Health Administration (OSHA), indicating a fatal toxicity. The boron compounds were effective in reducing carbon monoxide, but didn't meet the OSHA limit. The boron compound inhibited the burning behavior of the cypress wood, which suppressed the second maximum oxygen consumption rate by 5.3 to 18.9% and the maximum carbon monoxide generation by 0 to 25%.

Dimensional Stability, Color Change, and Durability of Boron-MMA Treated Red Jabon (Antochephalus macrophyllus) Wood

  • PRIADI, Trisna;ORFIAN, Gema;CAHYONO, Tekat Dwi;ISWANTO, Apri Heri
    • Journal of the Korean Wood Science and Technology
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    • v.48 no.3
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    • pp.315-325
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    • 2020
  • Boron compound had many advantages as wood preservative, but it was prone to leaching. Improving boron preservation was required to extend the service life of fast growing and low durability red jabon (Antochephalus macrophyllus) hardwood. This study aimed to evaluate the dimensional stability, color change and durability of modified red jabon wood by double impregnation with boron and methyl methacrylate (MMA) and heat treatment. Impregnation I used boric acid or borax, and impregnation II used MMA, while heat treatment used temperatures of 90 ℃ or 180 ℃ for 4 hours. The dimensional stability, leachability, water absorption, color change and decay resistance of modified red jabon wood were tested. The results showed that MMA impregnation increased the dimensional stability of red jabon wood, while the leaching and water absorption in the wood significantly reduced. Heating at 180 ℃ caused less water absorption and higher dimensional stability of the wood than that of heating at 90 ℃. Impregnation with boric acid and MMA followed by heating at 90 ℃ resulted in the highest wood ASE, 89.9%. The color change (∆E*) of wood increased significantly after MMA impregnation and heating at 180 ℃. Boric acid impregnation caused more resistant wood than borax impregnation against decay fungi and termites. Impregnation with boric acid and MMA followed with heating at 180 ℃ increased significantly the wood resistance against decay fungi and termites.

A Study on the Physical Characteristics of III-V Compound Boron Phosphide using CVD (CVD를 이용해 증착한 III-V 화합물 보론 포스파이드의 물성분석에 관한 연구)

  • Hong, Kuen-Kee;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.332-335
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    • 2004
  • Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

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Optimized Decomposition of Ammonia Borane for Controlled Synthesis of Hexagonal Boron Nitride Using Chemical Vapor Deposition

  • Han, Jaehyu;Kwon, Heemin;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.285-285
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    • 2013
  • Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

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