• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.198-198
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• 2009

The size of LCD Panel is gradually getting bigger. But the efficient uses of glass and the increasing output of narrow bezel type makes importantly the role of sealant which bonding two glasses. We devised a new tester with pre-inserted blade for interfacial fracture toughness measurement, and evaluated quantitatively bonding ability of sealant. The blade tester has been analyzed with two process parameter, moving speed and inserting depth of blade.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.206-209
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• 1994

This paper has been researched bondability of electronic devices, such as lead frame and thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to control both the thermal distribution of the bonds and it stability, because electronics components is consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realzed fluxless bonding process with filler metal such as plating layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1079-1083
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• 1998

In this study, ultrasonic power of Aluminum wire bonder, bond time and bond force are investigated and valued in order to minimize failure of bonding pad lift. We also tried to control those 3 factors properly. We got the conclusion that if we turn down the ability of ultrasonic power or bond time, we can get a pad lift from a boundary between bond pad ad wire because pad metal and wire joining is unstable, but it is best condition when it ultrasonic power is 100∼130unit, bond time is 15∼20msec and bond force is 4∼6gf.

• 한국분말재료학회지
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• 제14권1호
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• pp.44-49
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• 2007

In the fabrication of dye-sensitized solar cells (DSSCs), carbon counter electrode has been tested for replacing the platinum counter electrode which has two drawbacks: limited surface area and high material cost. Poor mechanical stability of carbon layer due to weak bonding strength to electrically conductive TCO (transparent conducting oxide) glass substrate is a crucial barrier for practical application of carbon counter electrode. In the present study a carbon counter electrode with high conversion efficiency, comparable to Pt counter electrode, could be fabricated by adaption of a bonding layer between particulate carbon material and TCO substrate.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Composites Research
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• 제30권6호
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• pp.416-421
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• 2017

CFRP와 금속간의 접합공정이 개선된 구조용 접착제가 제조되었다. 구조용 접착제에 대한 경화시간, 기지재료의 표면상태 그리고 접착제의 양에 따른 최적의 접합공정 조건을 랩쉐어 실험을 통하여 파악하였다. 적합한 접합조건을 확인하기 위해 이종재료간의 접합 파단면 상태를 반사현미경을 이용하여 평가하였다. 이종재료간 접합력 향상을 위해 접착제의 개선뿐만 아니라 CFRP의 표면처리 또한 중요하였다. 구조용 접착제의 경우 180도 조건에 20분의 경화온도 조건이 최적이였으며, CFRP의 표면 처리에 따라 접합특성이 향상됨을 확인하였다. 이종재료 간 접합을 위해 구조용 접착제의 양은 $1.5{\times}10^{-3}g/mm^2$ 조건일 때 최적이었다. 접합공정의 개선 및 최적화를 통해 기존의 접착력 대비 10% 이상의 물성 강화를 나타냄을 확인하였다.

• 소성∙가공
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• 제27권5호
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• pp.267-275
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• 2018

The clad sheet material is produced by a roll-bonding process of one or more materials with different properties. Good formability of clad sheet material is an essential property in to deform a clad metal sheet into a part or component. Performance of the clad sheet material largely depends on interfacial bond strength between different materials. In this study, interfacial bond strength of STS/Al clad sheet was analyzed by varying experimental parameters using a blanking process. Experimental parameters are the punching speed, clearance, and stacking order of plate materials. In addition, blanking test results were compared with bond strengths measured by the T-peel test, that analyzes interface bonding strength of the standard clad sheet. The blanking process was analyzed by the finite element method under the sticking condition of interface of different materials, and experimental results and analysis results were compared.