• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.76-83
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• 2010

Metallic sandwich panels with pyramidal truss structures are high-stiffness and high-strength materials with low weight. In particular, bulk structures have enough space for additional multi-functionalities. In this work, in order to fabricate 3-D structures efficiently, Layered Manufacturing Method (LMM) which was composed of three steps, including crimping process, stacking process and bonding process using rapid infrared brazing, was proposed. The joining time was drastically reduced by employing infrared brazing of which heating rate and cooling rate were faster than those of conventional furnace brazing. By controlling the initial cooling rate slowly, the bonding strength was improved up to the level of strength by conventional vacuum brazing. The observation of infrared brazed specimens by optical microscope and SEM showed no defect on the joining sections. The experiments of 1-layered pyramidal structures and 2-layered pyramidal structures subject to 3-point bending were conducted to determine structural advantages of multilayered structures. From the results, the multi-layered structure has superior mechanical properties to the single-layered structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.220-220
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• 2012

저밀도 알곤 유도결합플라즈마(Ar-ICP) 를 적용한 그래핀 클리닝 연구를 보고한다. 알곤 축전결합플라즈마(Ar-CCP)는 높은 이온포격에너지 (수백 eV) 로 인하여 그래핀의 C-C $sp_2$ bonding을 쉽게 파괴하고 defect을 형성시킨다. 그러나 저밀도 ($n_i$ < $5{\times}10^8cm^{-3}$) Ar-ICP 에 노출된 그래핀은 낮은 이온포격에너지, 이온밀도로 인하여 defect 이 형성되지 않고 residue 제거가 가능하였다. Graphene 이 집적된 back-gated field effect transistor (G-FET) 가 저밀도 Ar-ICP 에 노출될 경우 resist residue 제거로 인하여 $V_{dirac}$ 이 0 V 방향으로 이동하고 mobility 가 증가하는 것을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.382-386
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• 2011

It has been required to develop a defect detection system to perform defect detection capabilities after the bonding process in the production of RFID tags. However, we are difficult to design a system with understanding the characteristics of RFID tags and design concepts. Also we are difficult to modify even minor changes in features. In this paper, we design the defect RFID detection system using UML and object-oriented design techniques. We suggest the method for apply the UML Diagram to LabVIEW OOP and the technique for redesign the effect detection system's changes.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2001.11a
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• pp.22-27
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• 2001

The purpose of this study is development of dry floor tile method that practically used for improving wet method's defect, with resin mat design. PE resin used mat which satisfied with bonding test, waterproof test, resistance to chemical attack test, resistance to impact test and freezing and thawing test is confirmed the basic property.

• Journal of the Korea Institute of Building Construction
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• v.1 no.2
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• pp.185-190
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• 2001

The purpose of this study is the development of practical Dry floor tile unit method that settle the defect of a wet method and designed for resin mat. With use of PE resin which is confirmed the basic property, it is developed that resin mat, joint-sealing compound with fixed form and space management to Dry floor tile unit method. The result of this study is below. 1) To acquire above the 4kgf/$\textrm{cm}^2$ - construction specification criterion, the bonding space that between resin mat and tile has to occupy the 50% of resin mat module space(10,000$\textrm{cm}^2$). 2) Criteria of bonding part plane is below. simpleness of metal form. productivity, uniform quality after injection molding cooling, easy cutting for remain space management, adhesive property, construction ability, transformation of a severed piece under pressure and so on. 3) To get the shape that could protect the interfacial breakdown, it is designed that resin mat and tile are unified after the bond input. 4) Adapted joint-sealing compound is the material of urethane kinds wedge form. Resin mat has the water passageway that could drain the water. 5) To manage the severed piece of tile, the resin mat is likely to divide the half and the quarter and the plastic drainage is developed in the severed piece.

• The Journal of the Acoustical Society of Korea
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• v.9 no.2
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• pp.5-13
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• 1990

In this paper, 50MHz reflection ultrasonic microscope system with small aperture acoustic lens has been constructed in order to study the defects which lay deep in thick specimens, and acoustic images of multilayered media have been analyzed. Output characteristics of this system for multilayered media have been influenced by acoustic attenuation, aberration in specimen, type of lens and the properties of a defect, and it has been used for image processing of the multilayered I.C. and the bonding layer. In experimental results, it has been shown that small aperture ultrasonic microscope system was powerful tool for inspection of thick specimens such as electronic device, bonding layer, quality of ceramic materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.13-20
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• 2010

Due to the recent quantum leaps forward in bio-, nano-, and information-technologies, the precisionization and miniaturization of mechanical and electrical components are in high demand. The allowable margin for vibration limits for such equipments is becoming stricter. In order to meet this demand, understandings on the characteristics of vibration isolation systems are highly required. Among the components comprising the vibration isolation system, air spring has become a focal point. In order to develop a complex defect tester for COG bonding of display panels, a vibration isolation system composed of air springs for mounting is considered in this study. The dynamic characteristics of the air spring are investigated, which is the most essential ingredient for reducing the vibration problem of the tester to the lowest level. Uncoupled dynamic parameters of the air spring are identified through MTS experiments, followed by suggestion of a model-based approach to obtain the remaining coupled dynamic parameters. Finally, the dynamic behaviors of the air spring are estimated and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.310-313
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• 2002

Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.