• 제목/요약/키워드: bonding defect

검색결과 66건 처리시간 0.03초

피라미드 트러스형 금속 샌드위치 판재의 적외선 브레이징을 이용한 효율적 적층식 제작 및 특성에 관한 연구 (Efficient Layered Manufacturing Method of Metallic Sandwich Panel with Pyramidal Truss Structures using Infrared Brazing and its Mechanical Characteristics)

  • 이세희;성대용;양동열
    • 한국정밀공학회지
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    • 제27권8호
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    • pp.76-83
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    • 2010
  • Metallic sandwich panels with pyramidal truss structures are high-stiffness and high-strength materials with low weight. In particular, bulk structures have enough space for additional multi-functionalities. In this work, in order to fabricate 3-D structures efficiently, Layered Manufacturing Method (LMM) which was composed of three steps, including crimping process, stacking process and bonding process using rapid infrared brazing, was proposed. The joining time was drastically reduced by employing infrared brazing of which heating rate and cooling rate were faster than those of conventional furnace brazing. By controlling the initial cooling rate slowly, the bonding strength was improved up to the level of strength by conventional vacuum brazing. The observation of infrared brazed specimens by optical microscope and SEM showed no defect on the joining sections. The experiments of 1-layered pyramidal structures and 2-layered pyramidal structures subject to 3-point bending were conducted to determine structural advantages of multilayered structures. From the results, the multi-layered structure has superior mechanical properties to the single-layered structure.

저밀도 유도결합플라즈마 처리를 이용한 그래핀 클리닝

  • 임영대;이대영;심전자;라창호;유원종
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.220-220
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    • 2012
  • 저밀도 알곤 유도결합플라즈마(Ar-ICP) 를 적용한 그래핀 클리닝 연구를 보고한다. 알곤 축전결합플라즈마(Ar-CCP)는 높은 이온포격에너지 (수백 eV) 로 인하여 그래핀의 C-C $sp_2$ bonding을 쉽게 파괴하고 defect을 형성시킨다. 그러나 저밀도 ($n_i$ < $5{\times}10^8cm^{-3}$) Ar-ICP 에 노출된 그래핀은 낮은 이온포격에너지, 이온밀도로 인하여 defect 이 형성되지 않고 residue 제거가 가능하였다. Graphene 이 집적된 back-gated field effect transistor (G-FET) 가 저밀도 Ar-ICP 에 노출될 경우 resist residue 제거로 인하여 $V_{dirac}$ 이 0 V 방향으로 이동하고 mobility 가 증가하는 것을 확인하였다.

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UML과 LVOOP를 활용한 RFID 불량 검출 시스템의 구현 (The Implementation of the Detection System of RFID Defective Tags Using UML and LabVIEW OOP)

  • 정민포;조혁규;정덕길
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 추계학술대회
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    • pp.382-386
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    • 2011
  • RFID 태그 생산 분야에서 RFID 칩 본딩 과정 이후에 RFID 태그 불량 검출 기능을 수행하는 불량 검출 시스템 개발이 요구되어 왔다. 그러나 RFID 태그의 특징을 이해하면서 제대로 된 설계 개념을 가지고 구현된 시스템을 설계하기가 어렵고 사소한 기능의 변화에도 시스템을 처음부터 설계를 해야 하는 어려움이 있었다. 이 논문에서는 RFID 태그 불량 검출 기능을 수행하는 불량검출 시스템을 UML을 이용하여 객체지향 기법으로 설계하고 UML로 설계된 모델링을 객체지향을 지원하는 비주얼 언어인 LabVIEW OOP로 적용하는 방법을 제시한다. UML과 LabVIEW OOP로 설계되고 구현된 불량검출 시스템에 대한 성능과 시스템의 기능 변화에 따른 재설계 기법에 대한 기법도 제안한다.

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바닥타일 건식공법용 수지매트 개발에 관한 연구 (A Study on Design of Dry Floor Tile Unit Method System)

  • 김상미;조상영;김성식;임남기;정병훈;김무성
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2001년도 학술논문발표회
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    • pp.22-27
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    • 2001
  • The purpose of this study is development of dry floor tile method that practically used for improving wet method's defect, with resin mat design. PE resin used mat which satisfied with bonding test, waterproof test, resistance to chemical attack test, resistance to impact test and freezing and thawing test is confirmed the basic property.

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수지매트를 이용한 바닥타일 건식공법 시스템에 관한 연구 (The Study on the Dry Floor Tile Unit System used Resin Mat)

  • 김성식;임남기;정병훈;정재영;정상진
    • 한국건축시공학회지
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    • 제1권2호
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    • pp.185-190
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    • 2001
  • The purpose of this study is the development of practical Dry floor tile unit method that settle the defect of a wet method and designed for resin mat. With use of PE resin which is confirmed the basic property, it is developed that resin mat, joint-sealing compound with fixed form and space management to Dry floor tile unit method. The result of this study is below. 1) To acquire above the 4kgf/$\textrm{cm}^2$ - construction specification criterion, the bonding space that between resin mat and tile has to occupy the 50% of resin mat module space(10,000$\textrm{cm}^2$). 2) Criteria of bonding part plane is below. simpleness of metal form. productivity, uniform quality after injection molding cooling, easy cutting for remain space management, adhesive property, construction ability, transformation of a severed piece under pressure and so on. 3) To get the shape that could protect the interfacial breakdown, it is designed that resin mat and tile are unified after the bond input. 4) Adapted joint-sealing compound is the material of urethane kinds wedge form. Resin mat has the water passageway that could drain the water. 5) To manage the severed piece of tile, the resin mat is likely to divide the half and the quarter and the plastic drainage is developed in the severed piece.

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초음파 현미경을 이용한 다층구조물의 해석 (The Analysis of Multilayered Media Using Ultrasonic Microscopy)

  • 고대식;전계석
    • 한국음향학회지
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    • 제9권2호
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    • pp.5-13
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    • 1990
  • 본 연구에서는 수 파장 이상의 깊이에 존재하는 결함을 탐상하기 위하여 50MHz의 중심주파수에서 동작하는 small aperture형 초음파현미경을 구성하였고 다층구조 샘플에 대한 영상을 연구분석하였다. 다층구조물에서의 출력특성을 음향감쇠, 수차, 렌즈형태, 샘플의 특성에 영향을 받으며 이것은 다층구조 I.C.와 bonding층 탐상에 이용할 수 있다. 실험결과, small aperture형 초음파현미경은 large aperture형 시스템에 비하여 두꺼운 샘플의 탐상에 유리하며 타 도구에서 관찰이 어려운 다층구조의 층별 탐상과 내부구조의 변형상태등을 2차원 영상으로 탐상할 수 있는 유용한 도구임을 확인하였다.

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CVD로 성장된 다결정 3C-SiC 박막의 라만특성 (Raman Scattering Investigation of Polycrystalline 3C-SiC Thin Films Deposited on $SiO_2$ by APCVD using HMDS)

  • 윤규형;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.197-198
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    • 2009
  • This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

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COG 본딩공정 고속복합 검사 시스템의 방진용 에어 스프링의 동적 파라미터 규명 연구 (Dynamic Parameters Identification of an Air Spring for Vibration Isolation of a Complex Testing System of COG Bonding Process)

  • 이주홍;김필기;석종원;오병준
    • 한국정밀공학회지
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    • 제27권7호
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    • pp.13-20
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    • 2010
  • Due to the recent quantum leaps forward in bio-, nano-, and information-technologies, the precisionization and miniaturization of mechanical and electrical components are in high demand. The allowable margin for vibration limits for such equipments is becoming stricter. In order to meet this demand, understandings on the characteristics of vibration isolation systems are highly required. Among the components comprising the vibration isolation system, air spring has become a focal point. In order to develop a complex defect tester for COG bonding of display panels, a vibration isolation system composed of air springs for mounting is considered in this study. The dynamic characteristics of the air spring are investigated, which is the most essential ingredient for reducing the vibration problem of the tester to the lowest level. Uncoupled dynamic parameters of the air spring are identified through MTS experiments, followed by suggestion of a model-based approach to obtain the remaining coupled dynamic parameters. Finally, the dynamic behaviors of the air spring are estimated and discussed.

다결정 3C-SiC 박막의 라만 특성 (Raman Characteristics of Polycrystalline 3C-SiC Thin Films)

  • 정준호;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.357-358
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    • 2007
  • Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

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홈구조 실리콘 접합 경계면에서의 Void 제거를 위한 실리콘 직접접합 방법 (The Removal Of Voids In The Grooved Interfacial Region Of Silicon Structures Obtained With Direct Bonding Technique)

  • Kim, Sang-Cheol;Kim, Eun-Dong;Kim, Nam-Kyun;Bahna, Wook;Soo, Gil-Soo;Kim, Hyung-Woo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.310-313
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    • 2002
  • Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

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