• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.312-316
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• 1999

The interfacial structure of duplex treated AISI 4140 consisting of iron nitride and TiN layer was characterized by optical microscope, SEM and XRD. A black layer was formed from the decomposition of iron nitride during Ti ion bombardment. The black layer was characterized as an a-Fe phase transformed from the iron nitride by XRD. In order to identify the formation mechanism of the black layer, a thermal analysis of iron nitride undertaken by DSC method. As an iron nitride was mostly consisted of ${\gamma}$'-Fe$_4$N and $\varepsilon$-$Fe_3$N phase after plasma nitriding, in this study, a ${\gamma}$'$-Fe_4$N and $\varepsilon$-$Fe_3$N powders were separately prepared by the different processing conditions of gas nitriding of iron powder in the fluidized bed. From the DSC thermal analysis, the phase transformation of ${\gamma}$'$-Fe_4$N, $\varepsilon$-$Fe_3$N was followed the path of transformation; $ \Upsilon{'}-Fe_4$Nlongrightarrow${\gamma}$-Felongrightarrowa-Fe and of $\varepsilon$-$Fe_3$Nlongrightarrow$\varepsilon$-$Fe_{2.5}$ /N+${\gamma}$'$-Fe_4$Nlongrightarrow${\gamma}$'-Fe$_4$Nlongrightarrow${\gamma}$longrightarrowFelongrightarrowalongrightarrowFe, respectively. It explains the reason why the $\varepsilon$ $-Fe_3$N phase disappeared in the first time and then ${\gamma}$'-Fe$_4$N in the formation of the black layer in the duplex coating.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.416-422
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• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• Proceedings of the Korean Society of Sericultural Science Conference
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• 1997.06a
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• pp.23-49
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• 1997

This is a progress report of rice biotechnology including development of gene transformation system, gene cloning and molecular mapping in rice. The scope of the research was focused on the connection between conventional breeding and biotech-researches. Plant transformation via Agrobacterium or particle bombardment was developed to introduce one or several genes to recommended rice cultivars. Two chimeric genes containing a maize ribosome inactivating protein gene (RIP) and a gerbicide resistant gene (bar) were introduced to Nipponbare, a Japonica cultivar, and transmitted to Korean cultivars. The homozygous progenies of herbicide resistant transgenic plant showed good fertility and agronomic characters. To explore the genetic resourses in rice, over 8,000 cDNA clones from immature rice seed have been isolated and sequenced. About 13% of clones were identified as enzymes related to metabolic pathway. Among them, twenty clones have high homology with genes encoding enzymes in the photorespiratory carbon cycle reaction. Up to now about 100 clones were fully sequenced and registered at EMBL and GenBank. For the mapping of quantitative tarits loci (QTL) and eternal recombinant inbred population with 164 F13 lines (MGRI) was developed from a cross between Milyang 23 and Gihobyeo, Korean rice cultivars. After construction of fully saturated RFLP and AFLP map, quantitative traits using MGRI population were analyzed and integrated into the molecular map. Eighty seven loci were determined with 27 QTL characters including yield and yield components on rice chromosomes. Map based cloning was also tried to isolate semi-dwarf (sd-1) gene in rice. A DNA probe, RG 109, the most tightly linked to sd-1 gene was used to screen from bacterial artifical chromosome (BAC) libraries and five over lapping clones presumably containing sd-1 gene were isolated. Rice genetic database including results of biotech reasearch and classical genetics is provided at Korea Rice Genome Server which is accessible with world wide web (www) browser. The server provides rice cDNA sequences and map informations linked with phenotypic images.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.302-306
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• 2021

SnO₂ 30/Ag 15/SnO₂ 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10^-3 Ω^-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO₂ 30/Ag 15/SnO₂ 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

• Journal of Plant Biotechnology
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• v.48 no.4
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• pp.246-254
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• 2021

Environmental stresses are estimated to have reduced global crop yields of wheat by 5.5%. However, traditional approaches for the transfer of resistance to these stresses in wheat plants have yielded limited results. In this regard, genetic transformation has undoubtedly opened up new avenues to overcome crop losses due to various abiotic stresses. Particle bombardment has been successfully employed for obtaining transgenic wheat. However, most of these procedures employ immature embryos, which are not available throughout the year. Therefore, the present investigation utilized mature seeds as the starting material and used the calli raised from three Moroccan durum wheat varieties as the target tissue for genetic transformation by the biolistic approach. The pANIC-5E plasmid containing the SINA gene for drought and salinity tolerance was used for genetic transformation. To enhance the regeneration capacity and transformation efficiency of the tested genotypes, the study compared the effect of copper supplementation in the induction medium (up to 5 μM) with the standard MS medium. The results show that the genotypes displayed different sensitivities to CuSO₄, indicating that the transformation efficiency was highly genotype-dependent. The integration of transgenes in the T₀ transformants was demonstrated by polymerase chain reaction (PCR) analysis of the obtained resistant plantlets with primers specific to the SINA gene. Among the three genotypes studied, 'Isly' showed the highest efficiency of 9.75%, followed by 'Amria' with 1.25% and 'Chaoui' with 1%.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.631-640
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• 2019

Thorium ($^{232}Th$) is four times more abundant than uranium in nature and has become a new important source of energy in the future. This is due to the ability of thorium to undergo the bombardment of neutron to produce uranium-233 ($^{233}U$). The aim of this study is to investigate the production cost of thorium oxide ($ThO_2$) resulted from the thorium extraction process. Four main parameters were studied which include raw material and chemical cost, total capital investment, direct cost and indirect cost. These parameters were justified to obtain the final production cost for the thorium extraction process. The result showed that the raw material costs were $63,126.00 - $104,120.77 (0.5 ton), $126,252.00 - $178,241.53 (1.0 ton), and $1,262,520.00 - $1,782,415.33 (10.0 tons). The total installed equipment and total cost investment were estimated to be approximately $11,542,984.10 and $13,274,431.715 respectively. Hence, the total costs for producing 1 kg $ThO_2$ were $6829.79 - $6911.78, $3540.95 - $3592.94, and $501.18 - $553.17 for 0.5, 1.0, and 10.0 tons respectively. The result concluded that with higher mass production, the cost of 1 kg $ThO_2$ would be reduced which in this scenario, the lowest production cost was $$501.18kg^{-1}$-$$553.17kg^{-1}$ for 10.0 tons of $ThO_2$ production.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.59-59
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• 1999

In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

• Nuclear Medicine and Molecular Imaging
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• v.40 no.4
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• pp.228-232
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• 2006

Purpose: electrophilic $^{18}F(T_{1/2}=110\;min)$ radionuclide in the form of $[^{18}F]F_2$ gas is of great significance for labeling radiopharmaceuticals for positron omission tomography (PET). However, its production In high yield and with high specific radioactivity is still a challenge to overcome several problems on targetry. The aim of the present study was to develop a method suitable for the routine production of $[^{18}F]F_2$ for the electrophilic substitution reaction. Materials and Methods: The target was designed water-cooled aluminum target chamber system with a conical bore shape. Production of the elemental fluorine was carried out via the $^{18}O(p,n)^{18}F$ reaction using a two-step irradiation protocol. In the first irradiation, the target filled with highly enriched $^{18}O_2$ was irradiated with protons for $^{18}F$ production, which were adsorbed on the inner surface of target body. In the second irradiation, the mixed gas ($1%[^{19}F]F_2/Ar$) was leaded into the target chamber, fellowing a short irradiation of proton for isotopic exchange between the carrier-fluorine and the radiofluorine absorbed in the target chamber. Optimization of production was performed as the function of irradiation time, the beam current and $^{18}O_2$ loading pressure. Results: Production runs was performed under the following optimum conditions: The 1st irradiation for the nuclear reaction (15.0 bar of 97% enriched $^{18}O_2$, 13.2 MeV protons, 30 ${\mu}A$, 60-90 min irradiation), the recovery of enriched oxygen via cryogenic pumping; The 2nd irradiation for the recovery of absorbed radiofluorine (12.0 bar of 1% $[^{19}F]fluorine/argon$ gas, 13.2 MeV protons, 30 ${\mu}A$, 20-30 min irradiation) the recovery of $[^{18}F]fluorine$ for synthesis. The yield of $[^{18}F]fluorine$ at EOB (end of bombardment) was achieved around $34{\pm}6.0$ GBq (n>10). Conclusion: The production of $^{18}F$ electrophilic agent via $^{18}O(p,n)^{18}F$ reaction was much under investigation. Especially, an aluminum gas target was very advantageous for routine production of $[^{18}F]fluorine$. These results suggest the possibility to use $[^{18}F]F_2$ gas as a electrophilic substitution agent.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.