• Title/Summary/Keyword: bm35

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Efficiency Improvement for Dual Mode Amplifier Design Using Bias Switching (바이어스 스위칭을 이용한 이중 모우드 전력 증폭기 효율 개선)

  • Lee Young-Min;Koo Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.8 s.350
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    • pp.97-102
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    • 2006
  • This paper presents a novel technique of efficiency enhancement for dual mode transmitter. The future dual mode transmitter incorporates an amplifier which generates different level of output for different applications. For WiBro, the output is 1W at 2.3GHz, and for wireless LAN, the output is less than 100mW at 2.4GHz. Simple bias switching is proposed to get the higher efficiency at both of the applications. Without the bias switching the amplifier shows 10% PAE at 20dBm output for wireless LAN, but using a preselected lower bias, the efficiency improves up to 35%. This technique becomes more useful as the need of many function convergence terminals is increasing.

Fabrication of InP/InGaAs Avlanche Photodeode with Floating Guard Ring by Double Diffusion (Floating Guard Ring 구조를 갖는 InP/InGaAs Avalanche Photodiode의 이중확산 방법에 의한 제작)

  • 박찬용;강승구;현경숙;김정수;김홍만
    • Korean Journal of Optics and Photonics
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    • v.7 no.1
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    • pp.66-71
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    • 1996
  • We analyzed and fabricated InP/InGaAs avalanche photodiode (APD) having floating guard ring (FGR). Since the FGR-APD is very simple to fabricate and highly reliable, the fabrication of FGR-APD and its application to the optical receiver are very useful and interesting. A double zinc diffusion was employed to fabricate and one dimensional electric field analysis was used for design. Two dimensional gain measurement showed that the FGR suppressed gain at the curved edge, indicating the successful behavior as a guard ring. The fabricated device had 35 GHz of gain-bandwidth product, and showed the sensitivity of -31.9 dBm at a bit error rate of $10^{-9}$ when it was applied to a 2.5 Gbps optical receiver.

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Fabrication and Characterization of PIN-Preamplifier Module for High Speed Optical Receiver (고속 광통신용 PIN-전치증폭기 수광모듈 제작 및 특성 측정)

  • 윤태열;박경현;송민규;황인덕;윤태열;유지범;정종민
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.333-339
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    • 1994
  • We fabricated a single mode fiber pigtailed PIN-preamplifier front-end receiver module for the high speed optical receiver. Hybrid method was used to integrate GaInAs PIN photodiode and transimpedance type GaAs preamplifier. The capacitance and the diameter of light receiving area of PIN photodiode were 0.35 pF and $20{\mu}m$ respectively. The -3 dB cut-off frequency of PIN-preamplifier module was above 2 GHz, and the sensitivity of the module at 2.5 Gbps NRZ $(PRBS=2^{23}-1)$ signal was -25.2 dBm at $10^{-9}$ BER. > BER.

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Analysis of Flavonoid 3',5'-Hydroxylase Gene in Transgenic Petunia (Petunia hybrida) Plants (형질 전환된 페튜니아 식물체에서의 Flavonoid 3',5' -Hydroxylase 유전자의 분석)

  • 김영희
    • Korean Journal of Plant Tissue Culture
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    • v.25 no.5
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    • pp.323-327
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    • 1998
  • The flavonoid biosynthetic pathway has been studied as a genetic model system, particularly in Petunia hybrida. In order to study the flavonoid biosynthetic pathway, we constructed a fusion gene system between Cauliflower Mosaic Virus (CaMV) 35S promoter and eggplant flavonoid 3', 5'-hydroxylase in pBI 121 plasmid. An optimal condition for plant regeneration was observed when internode explants were cultured on MS medium supplemented with IAA 0.2 mg/L plus BA 3 mg/L. For plant transformation internode explants of Petunia hybrida were precultured on BM medium supplemented with IAA 0.2 mg/L plus BA 3 mg/L. Putative transgenic plants were selected on medium containing kanamycin 50 mg/L plus cefotaxim 300 mg/L. Putative selected transformants were confirmed by amplification of selectable marker gene (nptII) by polymerase chain reaction (PCR) and Southern hybridization of flavonoid 3',5'-hydroxylase gene.

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Design of 14.0-14.5 GHz 3Watt SSPA for VSAT Applications (VSAT용 14.0-14.5 GHz 3와트 SSPA의 설계 및 제작연구)

  • 전광일;박진우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.5
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    • pp.920-927
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    • 1994
  • A development of an efficient 14.0~14.5GHz 3 Watt SSPA is described in this paper, which is applicable to the very small aperture terminal(VSAT) for bidirectional data and voice signal transmission in low cost and with small size. The SSPA consists of two stages of low noise amplifiers using the low noise GaAs FETs. two stages of medium power amplifiers using the medium power GaAs FETs, and three stages of power amplifiers including a balanced amplifier using an internally matched power GaAs FET. The achieved with this seven stage amplifiers are 42dB signal power gain, 7dB noise figure, 35dBm output power at 1dB gain compression point and 2.0 and 1.5 input and output VSWR respectively.

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Design of Voltage Controlled Oscillator for X-band Radar Using CSRR loaded microstrip line (마이크로스트립 종단형 CSRR구조를 이용한 X-band 레이다용 전압제어발진기의 설계)

  • Kim, Gue-Chol
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.9
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    • pp.1277-1283
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    • 2013
  • In this paper, a novel voltage controlled oscillator(VCO) using CSRR loaded microstrip line for X-band RADAR is proposed. Using the microstrip line loaded CSRR inserted between the oscillator and buffer to the filter, the harmonic suppression has been improved. The measured results of the fabricated oscillator shows that its oscillation frequencies are from 9.28 to 9.39GHz according to the tuning voltage 0~10V, its output power level are about 16.6dBm at 9.35GHz. Compared with VCO using the conventional VCO, VCO using CSRR loaded microstirp, the harmonic suppression characteristic has been improved in 10.4dB

A 5Watt Power Amplifier Module Using Gallium Nitride Device (질화갈륨소자를 이용한 5Watt급 전력증폭기 모듈)

  • Park, Chun-Seon;Han, Sang-Min;Lim, Jong-Sik;Ahn, Dal;An, Chong-Chul;Park, Ung-Hee
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.5
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    • pp.1193-1200
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    • 2008
  • This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

Performance Analysis of RF Transformation in DS/CDMA Receiver (DS/CDMA수신기에서 RF변환부의 성능분석)

  • Pyeon, Suk-Bum;Ju, Jae-Han
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.2
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    • pp.86-92
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    • 1998
  • In this paper, it is derived the system design parameters for the J-STD-018 of the PCS mobile station(MS) minimum performance using DS/CDMA analyzed the system performance due to the receiver components. The simulation shows the selectivity is -70.96dB at 1.25MHz frequency offset from the carrier frequency while the MS noise figure to satisfy J-STD-018 is 10dB and the input 3rd harmonics intercept point of the MS class I and MS class II-V is -9.5dBm and -14dBm respectively. When the interference power level at the receiver is small, the receiver has better performance as we increase the gain of LNA. However, when the interference level at the receiver is large, the receiver performance is decreased by the effect of the spurious. Thus, the effectiveness of LNA On/Off switching technique is proved as to reduce the effect of the spurious.

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Synthesis of Fluorene-containing Photosensitive Polymer and Its Application to the Carbon Black-based Photoresist for LCD Color-Filter (Fluorene 단위 구조를 함유한 감광성 고분자의 합성 및 LCD 컬러필터용 카본블랙 포토레지스트로의 응용)

  • Kim, Joo-Sung;Park, Kyung-Je;Lee, Dong-Guen;Bae, Jin-Young
    • Polymer(Korea)
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    • v.35 no.1
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    • pp.87-93
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    • 2011
  • We developed a fluorene-containing multifunctional binder polymer for LCD color filter resist, and employing the binder polymer, carbon black based black photoresist (CBR) was prepared in order to apply it to the black matrix (BM). To obtain the multifunction of the binder polymer, we synthesized bisphenol fluorene epoxy acrylate-containing unsaturated polyester and identified the binder polymer structure with $^1H$ NMR, GPC and FTIR. The corresponding BFEA-polyester binder polymer was compared with the commercially available acryl binder toward the application to the CBR. From the BM lithography test, we found that the synthesized BFEA-polyester binder had better photocrosslinking capability and alkali solubility. In addition, the newly developed binder gave a good process margin, good resolution and adhesion property on a glass substrate.

All-optical wavelength conversion of 2.5 Gb/s optical signals by four-wave mixing in a semiconductor optical amplifier (반도체 광 증폭기내에서의 4광파 혼합을 이용한 2.5Gb/s 광신호의 전광 파장변환)

  • 방준학;서완석;이성은
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.8
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    • pp.69-75
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    • 1998
  • We demonstrate wavelength conversion of 2.5Gb/s optical signals by four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). We investigate the effect of input pump and signal powers on the coversion efficiency, optical signal-to-noise ratio (OSNR) and extinction ratio to be a measure of performance in a wavelength converter. As a result, we show that the maximum bit error rate (BER) performance can be obtained by co promising among high-vonversion efficiency (minimum Pprobe), high-OSNR (maximum Pprobe) and low-cross-gain saturation effects (Pprobe kept at least 6dB weaker than Ppump). In our experiment, we obtain optimum performance at +3 dBm pump power and -6dBm signal power. The power penalty incurred in the wavelength conversion can be minimized by careful selection of the input pump and signal powers. We show that about 0.5dB power penalty for 3.2nm wavelength coversion at 10-10 BER is achievable.

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