• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.565-568
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• 2008

In this study, a blue-emitting $Sr_2MgSi_2O_7:Eu^{2+}$ (SMS) phosphor for white light-emitting diodes is reported. Through transition of $4f{\rightarrow}5d$ in $Eu^{2+}$, SMS showed a strong blue emission under UV excitation. Additionally, the variation of emission wavelength of SMS is explained by crystal field effect and is supported by rietveld refinement.

• 한국세라믹학회지
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• 제47권2호
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• pp.146-150
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• 2010

Because the plasma display panel has used red, green and blue(RGB) phosphors, it has suffer from two intrinsic problems; 1) the cell defect due to the lack of binding force between phosphor particles and 2) mis-discharge because of difference of electrical characteristics among RGB phosphors. In order to control the mechanical and electrical properties of RGB phosphors, frit with $ZnOB_2O_3-SiO_2-Al_2O_3$ system was added to RGB phosphor as sintering additive. The mechanical properties were increased by the amount of frit. The amount of frit under 5 wt% rarely affected dielectric constant. However, there was the limit of amount because of decreasing optical properties seriously; over 3 wt% in red, over 10 wt% in green and blue.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.419-422
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• 2009

The luminescence intensity of calcium sulfide codoped with $Eu^{2+},\;Si^{4+}\;and\;Ga^{3+}$ was investigated as a function of the dopant concentration. An enhancement of the red luminescence resulted from the incorporation of $Si^{4+}\;and\;Ga^{3+}\;into\;CaS:Eu^{2+}.\;The\;non-codoped\;CaS:Eu^{2+}$ converted only 3.0% of the absorbed blue light into luminescence. As the $Si^{4+}\;and\;Ga^{3+}$ were embedded into the host lattice, the luminescence intensity increased and reached a maximum of Q = 10.0% at optimized concentrations of the codopants in CaS. Optimized CaS:$Eu^{2+},Si^{4+},Ga^{3+}$ phosphors were fabricated with blue GaN LED and the chromaticity index of the phosphor-formulated GaN LED was investigated as a function of the wt% of the optimized phosphor.

• 한국세라믹학회지
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• 제51권5호
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• pp.424-429
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• 2014

YAG:$Ce^{3+}$ phosphor powders were synthesized using $Al(OH)_3$ seeds by means of a PVA-polymer-solution route. Various types of PVA with different molecular weights (different polymerization) were used. All dried precursor gels were calcined at $500^{\circ}C$ and then heated at $1500^{\circ}C$ in a mix of nitrogen and hydrogen gases. The final powders were characterized via XRD, SEM, PSA, PL, and PKG analyses. The phosphor properties and morphologies of the synthesized powders were dependent on the PVA type. As the molecular weight of the PVA was increased, the particle size gradually decreased with agglomeration, and the luminous intensity of the phosphor increased. However, the phosphor powder prepared from the PVA exhibiting very high molecular weight, showed a 531 nm (blue) shift from the 541 nm (yellow) wavelength of the YAG:$Ce^{3+}$ phosphor. Finally, the synthesized YAG:$Ce^{3+}$ phosphor powder prepared from the PVA with 89,000 - 98,000 molecular weight showed phosphor properties similar to those of a commercial phosphor powder, but without a post-treatment process.

• 대한화학회지
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• 제50권3호
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• pp.232-236
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• 2006

형광체의 특성을 향상시키기 위하여 Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd)를 환원분위기에서 1350oC, 10시간동안 고상반응법으로 합성하였다. 상용품인 청색 형광체와 비교를 했을 때, 다양한 원소를 치환한 Y2SiO5:Ce 청색 형광체의 발광 특성이 우수 하다는 것을 관찰 할 수 있었다. 특히, 1mol%의 Li 이온이 도핑된 Y2SiO5:Ce 청색 형광체의 광 발광 특성이 가장 높았다. Y2SiO5:(Ce,Li) 청색 형광체의 입도형상을 주사전자현미경으로 분석한 결과, 입자의 크기가 약 3m인 유사구형임을 확인하였다.

• 한국세라믹학회지
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• 제40권10호
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• pp.949-953
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• 2003

청색 발광특성을 갖는 CaWO$_4$ 형광체를 rf 마그네트론 스퍼터링 방법으로 박막화를 시도하고,증착변수와 열처리 조건이 발광특성에 미치는 영향을 관찰하였다. 증착조건인 산소/아르곤 가스비, 기판온도에 따라서 박막의 구조적, 화학양론적 물성이 크게 영향을 받고 있었다. 후 열처리 공정에 의하여 발광특성의 향상을 얻을 수 있었다. 산소공공에 의한 청록색 영역의 발광도 관찰되었으며, 박막내의 산소결함이 제어되면서 청색 발광스펙트럼을 얻을 수 있었다.

• 한국재료학회지
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• 제11권9호
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 한국세라믹학회지
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• 제41권5호
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• pp.406-409
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• 2004

교류 구동 분산형 EL(ACPEL)에 사용되는 ZnS:Cu 청색 형광체를 고상 반응법으로 제조하였다. 1차 소성 후 인위적 결함을 형광체 표면에 도입함으로서 2차 소성 중에 의해 일어나는 ZnS의 상전이 및 EL 발광 휘도에 미치는 영향을 연구하였다. 즉 1차 소성된 형광체를 ball-mill 공정에서 인위적으로 표면에 defect를 형성시켜 ZnS의 저온상인 cubic으로의 전이가 용이하게 하여 EL구동하에서 발광 휘도를 증가시켰다. Ball-mill의 공정 변수로는 milling 시간과 rpm 등을 고려하여 각 조건에 따른 효과를 고찰하였으며, 발광 spectrum을 측정한 결과, 최적 조건에서 인위적인 결함을 형성하지 않은 형광체 보다 발광 휘도가 약 30% 이상 증가하였다. 또한 각기 다른 ball-mill 조건으로 합성된 형광체의 결정상을 분석하고 비교하였으며 상전이 특성에 따른 발광 휘도 변화를 고찰하였다.

• 조명전기설비학회논문지
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• 제21권9호
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• pp.12-17
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• 2007

The dynamic false contour noise was analyzed with consideration for the phosphor decay time of an ac PDP by computer simulation based on the measurement of the 1/10 phosphor decay times of the primary colors red, green and blue at the main wavelengths of each phosphor. The noise level of dynamic false contour is strongly dependent on phosphor decay time. The noise level decreases incrementally with the phosphor decay time, whereas the noise width increases. The moving velocity of an object does not affect the noise level. The entire experiment was performed under the condition of 8 subfields ADS driving scheme, 2.5[${\mu}sec$] scan speed, and 5[${\mu}sec$] sustain period with VGA grade panel.