• Applied Microscopy
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• v.27 no.3
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.859-860
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• 2012

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.11-20
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• 2002

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

• Journal of the Optical Society of Korea
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• v.13 no.3
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• pp.386-391
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• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.33-43
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• 2000

Up-conversion of rare-earth element added glass is promising area for short wavelength laser source by utilizing high power semiconductor infra-red laser if the efficiency can be increased by proper method. In this study, relatively low phonon energy fluoride glasses were prepared by co-doping rare-earth elements to realize the high efficiency up-convertor. The physical, chemical, andoptical properties of co-doped fluoride glasses were measured. 10 combinations of 5 different rare-earth fluoride elements doped samples were prepared and their transition temperatures, chemical durability, density, hardness, refractive index, absorption, fluorescence, and fluorescence lifetime were measured. 480nm wavelengths blue up-conversion was found in the Yb3+/Tm3+ co-doped glass sample with 800nm laser source and the optimum composition for the most efficient blue up-conversion was found from the glass sample with 0.3 mol% TmF3 and 1 mol% YbF3.

• Journal of the korean academy of Pediatric Dentistry
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• v.24 no.1
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• pp.139-147
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• 1997

Argon laser used in this case report, is special in having two wavelength of 488, 514nm blue-green visible light spectrum. Blue light is used for composite resin polymerization and caries detection. Green light is used for soft tissue surgery and coagulation. Maximum absorption of this laser light occurs in red pigmentation such as hemoglobin. The argon laser may be well-suited for selective destruction of blood clots and hemangioma with minimal damage to adjacent tissues. Argon laser light penetrates tissue to the 1 mm depth, so its thermal intensity is lower than $CO_2$ laser light. Also, due to its short wavelength it can be focused in a small spot and even single gene can be excised by this laser and microscopy. After applicating argon laser to 4 patient for surgical procedure and to 1 patient for curing the composite resin, following results were obtained. 1. Improved visibility were gained due to hemostasis and no specific technique were needed according to easy recontouring of the tissue. 2. Ability to use by contact mode, tactile sense was superior but tissue dragability and accumulation of tissue on the tip needed sweeping motion. 3. Additive local anesthetic procedure was needed. 4. No suture and less curing time reduced chair time, this made argon laser available in pediatric dentistry.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.110-111
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• 2014

RGB laser 를 이용하여 rf-magnetron sputtering 법으로 합성한 a-IGZO 박막의 photoresponse 를 관찰하였다. Air 분위기에서 red 파장을 조사 할 경우 비교적 slow recovery 특성을 보였으며, green 과 blue 파장을 조사 할 경우 red 보다 fast recovery 특성을 나타내었다. 그러나 진공에서 측정할 경우, red 파장에서는 recovery 가 빨라졌으며, green 과 blue 파장의 경우 recovery 가 매우 느려짐을 확인하였다. 이는 passivation 을 하지 않은 소자의 oxygen gas 의 흡/탈착 때문으로 예상할 수 있었으며, red 파장이 gas 탈착에 기여하는 정도가 매우 작고, green 과 blue 파장이 gas 탈착에 기여하는 정도가 매우 크기 때문인 것으로 생각할 수 있었다. 온도를 증가시킬 경우, 모든 경우에서 recovery 가 빠르게 나타났는데 이는 흡/탈착에 필요한 barrier 및 $V_o{^{2+}}$에서 Vo 로 돌아오기 위한 barrier 를 쉽게 넘어갈 수 있기 때문으로 이해 할 수 있었다. 이러한 결과를 stretched exponential equation 을 이용하여 해석하였으며 수치화 하였다.

• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.10a
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• pp.24-25
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• 1998

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.9
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• pp.129-134
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• 2016

This paper studies the high frequency PWM (pulse width modulation) driving technique to increase an optical efficiency and to prevent an optical color quenching of blue laser for head up display on vehicles using digital micro mirror device (DMD) panel and yellow phosphor wheel. The proposed approach adaptively drives the current pulse width modulated signals of high optical power of blue laser to increase the lifetime and to decrease the stem temperature of laser. This method stabilizes the temperature of laser according to the driving environment and the forward current capacity. By the proposed method, the brightness of blue laser is improved by about 37% compared to the continuous waveform current driving method.