• Title/Summary/Keyword: blocking oxide

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Simulation of Threshold Voltages for Charge Trap Type SONOS Memory Devices as a Function of the Memory States (기억상태에 따른 전하트랩형 SONOS 메모리 소자의 문턱전압 시뮬레이션)

  • Kim, Byung-Cheul;Kim, Hyun-Duk;Kim, Joo-Yeon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.981-984
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    • 2005
  • This study is to realize its threshold voltage shift after programming operation in charge trap type SONOS memory by simulation. SONOS devices are charge trap type nonvolatile memory devices in which charge storage takes place in traps in the nitride-blocking oxide interface and the nitride layer. For simulation of their threshold voltage as a function of the memory states, traps in the nitride layer have to be defined. However, trap models in the nitride layer are not developed in commercial simulator. So, we propose a new method that can simulate their threshold voltage shift by an amount of charges induced to the electrodes as a function of a programming voltages and times as define two electrodes in the tunnel oxide-nitride interface and the nitride-blocking oxide interface of SONOS structures.

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반도성 층의 2단계 소결에 의한 염료감응형 태양전지의 특성

  • Bong, Seong-Jae;Ma, Jae-Pyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.436-437
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    • 2012
  • 염료감응형 태양전지의 성능을 향상시키기 위해서는 염료에서 여기된 전자가 TiO2 계면을 따라 TCO (Transparent Conductive Oxide)로 이동하지 않고 산화된 염료나 전해질과 재결합하는 것을 차단하는 것, 그리고 염료에 TCO의 전기적 접촉을 차단하는 것 등이 필요하다. 이를 위해 본 연구에서는 TiO2 박막층 위에 차단층 TiO2를 $450^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$에서 각각 소결한 뒤Blocking layer로서의 온도에 따른 상(phase) 변화를 통해 염료감응형 태양전지의 효율 향상에 대해 실험하였다. 기존 염료 감응형 태양전지에 대한 보고에 의하면 $600^{\circ}C$ 이상에서의 상은rutile 상임을 확인할 수 있다. 실험결과 Blocking layer로서의 TiO2를 $750^{\circ}C$에서 $750^{\circ}C$에서 sintering 했을 때, 가장 좋은 전기적 특성을 나타내었다.

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Multifunctional Indium Tin Oxide Thin Films

  • Jang, Jin-Nyeong;Yun, Jang-Won;Lee, Seung-Jun;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.186-186
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    • 2015
  • We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

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Floridoside suppresses pro-inflammatory responses by blocking MAPK signaling in activated microglia

  • Kim, MinJeong;Li, Yong-Xin;Dewapriya, Pradeep;Ryu, BoMi;Kim, Se-Kwon
    • BMB Reports
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    • v.46 no.8
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    • pp.398-403
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    • 2013
  • Inflammatory conditions mediated by activated microglia lead to chronic neuro-degenerative diseases such as Alzheimer's, Parkinson's, and Huntington's diseases. This study was conducted to determine the effect of floridoside isolated from marine red algae Laurencia undulata on LPS (100 ng/ml) activated inflammatory responses in BV-2 microglia cells. The results show that floridoside has the ability to suppress pro-inflammatory responses in microglia by markedly inhibiting the production of nitric oxide (NO) and reactive oxygen species (ROS). Moreover, floridoside down-regulated the protein and gene expression levels of iNOS and COX-2 by significantly blocking the phosphorylation of p38 and ERK in BV-2 cells. Collectively, these results indicate that floridoside has the potential to be developed as an active agent for the treatment of neuro-inflammation.

The Fabrication of OLED using PBD as a Hole Blocking Layer

  • Kang, Min-Woong;Kim, Jong-Sung;Kwon, Sang-Jik;Lee, Hoo-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.784-787
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    • 2002
  • Oganic light emitting diodes (OLEDs) using PBD(2-(4-biphenylyl)-5-(4-tert-butylpheny)-1,3,4oxadiazole) as a hole blocking layer were fabricated and their device performances were investigated. The devices have a structure of glass substrate ${\setminus}$ indium tin oxide (ITO) ${\setminus}$ TPD(HTL)${\setminus}$PBD,BCP(HBL)${\setminus}$Alq3(EIL)${\setminus}$Mg:Ag(cathode). In this work Bathocuproine(BCP:2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and PBD which were previously known as a good ETL material were used as a HBL. By employing HBL, the luminance and quantum efficiency of OLEDs could be improved due to the increase of recombination probability of electrons and holes.

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Design and Fabrication of a Transient Voltage Stocking Device for Electrical Mains (전원회로용 과도전압 차단장치의 설계 및 제작)

  • 이종혁;송재용;길경석
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.11a
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    • pp.486-489
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    • 1999
  • This paper deals with the design rule and performance results of the transient voltage blocking devices (TBD) for low-voltage mains on shipboard. The proposed TBD consists of metal oxide varistors (MOV) and L-C filter to improve noise-elimination performance. Three kinds of TBDs are fabricated and tested by using a combination surge generator which can produce the standard impulse current of 8/20${\mu}$s 2.1kA. As a reults, the proposed TBD with series L-C filter has more excellent transient blocking and noise reduction performance than the conventional TBDs.

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MAGNETISM OF NANOPHASE IRON PARTICLES LASER EVAPORATED IN A CONTROLLED OXYGEN ATMOSPHERE

  • Turkki, T.;Jonsson, B.J.;Strom, V.;Medelius, H.;El-Shall, M.S.;Rao, K.V.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.745-748
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    • 1995
  • Magnetic nanoparticles of iron and iron oxide have been prepared in a modified upward thermal diffusion cloud chamber using pulsed laser evaporation. SEM/TEM studies of these particles reveal a size distribution with a mean diameter of about $60\;{\AA}$. FTIR spectrum measurements are used to investigate the difference in oxidation level between nanoparticles prepared at different partial oxygen pressures. The complex magnetic behaviour of these particles was studied using DC- and AC-susceptibility measurements. All samples exhibit superparamagnetism with blocking temperatures ranging from 50 K to above room temperature. The coercivity fields as well as the dependence of the blocking temperature on measuring frequency have been studied. magnetic anisotropy constants are found to be one order of magnitude higher than is known for the bulk values. The mean particle size estimated from the magnetic data is found to be in perfect agreement with the TEM observations.

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Optically transparent and electrically conductive indium-tin-oxide nanowires for transparent photodetectors

  • Kim, Hyunki;Park, Wanghee;Ban, Dongkyun;Kim, Hong-Sik;Patel, Malkeshkumar;Yadav, Pankaj;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.390.2-390.2
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    • 2016
  • Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

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Nitric Oxide Modulation of GABAergic Synaptic Transmission in Mechanically Isolated Rat Auditory Cortical Neurons

  • Lee, Jong-Ju
    • The Korean Journal of Physiology and Pharmacology
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    • v.13 no.6
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    • pp.461-467
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    • 2009
  • The auditory cortex (A1) encodes the acquired significance of sound for the perception and interpretation of sound. Nitric oxide (NO) is a gas molecule with free radical properties that functions as a transmitter molecule and can alter neural activity without direct synaptic connections. We used whole-cell recordings under voltage clamp to investigate the effect of NO on spontaneous GABAergic synaptic transmission in mechanically isolated rat auditory cortical neurons preserving functional presynaptic nerve terminals. GABAergic spontaneous inhibitory postsynaptic currents (sIPSCs) in the A1 were completely blocked by bicuculline. The NO donor, S-nitroso-N-acetylpenicillamine (SNAP), reduced the GABAergic sIPSC frequency without affecting the mean current amplitude. The SNAP-induced inhibition of sIPSC frequency was mimicked by 8-bromoguanosine cyclic 3',5'-monophosphate, a membrane permeable cyclic-GMP analogue, and blocked by 2-(4-carboxyphenyl)-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide, a specific NO scavenger. Blockade of presynaptic $K^+$ channels by 4-aminopyridine, a $K^+$ channel blocker, increased the frequencies of GABAergic sIPSCs, but did not affect the inhibitory effects of SNAP. However, blocking of presynaptic $Ca^{2+}$ channels by $Cd^{2+}$, a general voltage-dependent $Ca^{2+}$ channel blocker, decreased the frequencies of GABAergic sIPSCs, and blocked SNAP-induced reduction of sIPSC frequency. These findings suggest that NO inhibits spontaneous GABA release by activation of cGMP-dependent signaling and inhibition of presynaptic $Ca^{2+}$ channels in the presynaptic nerve terminals of A1 neurons.

Raloxifene, a Selective Estrogen Receptor Modulator, Inhibits Lipopolysaccharide-induced Nitric Oxide Production by Inhibiting the Phosphatidylinositol 3-Kinase/Akt/Nuclear Factor-kappa B Pathway in RAW264.7 Macrophage Cells

  • Lee, Sin-Ae;Park, Seok Hee;Kim, Byung-Chul
    • Molecules and Cells
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    • v.26 no.1
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    • pp.48-52
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    • 2008
  • We here demonstrate an anti-inflammatory action of raloxifene, a selective estrogen receptor modulator, in lipopolysaccharide (LPS)-induced murine macrophage RAW264.7 cells. Treatment with raloxifene at micromolar concentrations suppressed the production of nitric oxide (NO) by down-regulating expression of the inducible nitric oxide synthase (iNOS) gene in LPS-activated cells. The decreased expression of iNOS and subsequent reduction of NO were due to inhibition of nuclear translocation of transcription factor NF-${\kappa}B$. These effects were significantly inhibited by exposure to the phosphatidylinositol 3-kinase (PI 3-kinase) inhibitor, LY294002, or by expression of a dominant negative mutant of PI 3-kinase. In addition, pretreatment with raloxifene reduced LPS-induced Akt phosphorylation as well as NF-${\kappa}B$ DNA binding activity and NF-${\kappa}B$-dependent reporter gene activity. Thus our findings indicate that raloxifene exerts its anti-inflammatory action in LPS-stimulated macrophages by blocking the PI 3-kinase-Akt-NF-${\kappa}B$ signaling cascade, and eventually reduces expression of pro-inflammatory genes such as iNOS.