• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.373-378
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• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.194-197
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• 2006

Lead-free bismuth-layered perovskite ferroelectric europium-substituted $Bi_{4}Ti_{3}O_{12}(BTO)$ thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process. $Bi(TMHD)_3,\;Eu(THMD)_3,\;Ti(OiPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from $600^{\circ}\;to\;720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BET thin films annealed at $720^{\circ}C\;was\;25.95{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.22.2-22.2
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• 2006

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.1
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• pp.14-20
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• 2003

Piezoelectric ultrasonic transducers for high temperature contact measurement were developed. These high temperature ultrasonic transducers (HTUT) consisted of bismuth titanate piezoceramic element whose Curie temperature is higher than $600^{\circ}C$, a backing material of the mixture of tungsten powder and inorganic binder, an inner alumina tube, a wear Plate and a housing. The operational frequencies or the HTUT were 1.04 and 2.08 MHz, respectively. Various commercially available couplants for high temperature were evaluated and compared. As a couplant for high temperature ultrasonic testing between HTUT and test specimen, gold epoxy was selected. The peak amplitude of pulse-echo signals from steel test specimen decreased with increasing temperature. The operational temperature of the HTUT reached up to $500^{\circ}C$ at which the continuous contact measurement was possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.386-392
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• 2021

Multiferroics exhibiting the coexistence and a possible coupling of ferromagnetic and ferroelectric order are attracting widespread interest in terms of academic interests and possible applications. However, room-temperature single-phase multiferroics with soft ferromagnetic and displacive ferroelectric properties are still rare owing to the contradiction in the origin of ferromagnetism and ferroelectricity. In this study, we demonstrated that sizable ferromagnetic properties are induced in the ferroelectric bismuth ferrite-barium titanate system simply by introducing Co ions into the A-site. It is noted that all modified compositions exhibit well-saturated magnetic hysteresis loops at room temperature. Especially, 70Bi_0.95Co_0.05FeO₃-30Ba_0.95Co_0.05TiO₃ manifests noticeable ferroelectric and ferromagnetic properties; the spontaneous polarization and the saturation magnetization are 42 µC/cm² and 3.6 emu/g, respectively. We expect that our methodology will be widely used in the development of perovskite-structured multiferroic oxides.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.2-33.2
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• 2009

Dielectric and piezoelectric properties of Lead-free $(1-x)(Bi_{0.5}K_{0.5})TiO_3-xBiFeO_3$ceramics prepared by a conventional solid state reaction method were investigated in the range of x = 0~10 mol%. Piezoelectric coefficient was increased from 31 pC/N at x = 0 mol% to 64 pC/N at x = 6 mol% then decreased with increasing x. Electromechanical coupling factor ($K_p$) was increased up to 0.18 at x = 10 mol%. On the other hand, mechanical quality factor ($Q_m$) was decreased. Grain size was not much changed with various x and a single perovskite with tetragonal symmetry was maintained at all compositions forming a solid solution between $(Bi_{0.5}K_{0.5})TiO_3$ and $BiFeO_3$. Depolarization temperature ($T_d$) was gradually decreased with increasing x from $302^{\circ}C$ at x = 0 to $245^{\circ}C$ at x = 10 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.189-189
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• 2008

Due to the environmental issue vast research is going on to replace the widely used lead contented piezoelectric materials. Bismuth sodium titanate (abbreviated as BNT) based bismuth sodium titanate-barium titanate (abbreviated as BNBT) ceramic was prepared by using modified method rather than conventional mixed oxide method. This modification was made to improve the properties of BNT based ceramic. In this procedure $BaTiO_3$ (abbreviated as BT) was prepared using conventional mixed oxide method. Analytical grade raw materials of $BaCO_3$ and $TiO_2$ were weighted and ball milled using ethanol medium. The mixed slurry was dried and sieved under 80 mesh. Then the powder was calcined at $1100^{\circ}C$ for 2 hours. This calcined BT powder was used in the preparation of BNBT. Stoichiometric amount of $Bi_2O_3$, $Na_2CO_3$, $TiO_2$ and BT were weighted and mixed by using ball mill. The used calcination temperature was $850^{\circ}C$ for 2 hours. Calcined powder was taken for another milling step. BNBT disks were pressed to 15 mm of diameter and then cold isostatical press (CIP) was used. Pressed samples were sintered at $1150^{\circ}C$ for 2 hours. The SEM microstructure analysis revealed that the grain shape of the sintered ceramic was polyhedral and grain boundary was well matched where as the sample prepared by conventional method showed irregular arrangement and grain boundary not well matched. And sintered density was better (5.78 g/cc) for the modified method. It was strongly observed that the properties of BNBT ceramic near MPB composition was found to be improved by the modified method compare to the conventional mixed oxide method. The piezoelectric constant dB of 177.33 pC/N, electromechanical coupling factor $k_p$ of 33.4%, dielectric constant $K_{33}^T$ of 688.237 and mechanical quality factor $Q_m$ of 109.37 was found.