• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.172-173
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• 2007

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The thermal analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthrough(NPT) Insulated Gate Bipolar Transistor has been studied. For analysis of thermal distribution, we obtained experimental and simulation results by using finite element simulator, Ansys and by using photographic infrared thermometer, we compared experimental date with simulation result. and got good agreement. Also this paper provided thermal distribution of IGBT connected to heat sinks. and this results will be good information to design optimal heat sink for IGBT.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.157.1-157.1
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• 2013

외부 Ballast Capacitor를 이용한 Voltage Doubler 전원장치를 이용하여 Micro size의 대기압 플라즈마를 발생장치를 개발하였다. 2개의 외부 Capacitor를 병렬로 연결하여 충전한 다음 외부 Capacitor를 직렬로 연결하여 전압을 2배압 시킨 상태에서 방전이 일어나도록 하였다. Capacitor의 충 방전 제어는 Switch Device인 Insulated Gate Bipolar Transistor (IGBT)를 사용하였다. 개발된 대기압 플라즈마는 외부 Capacitor와 인가전압을 독립적으로 변화시킬 수 있기 때문에 방전 시 전류 전압을 독립적으로 제어할 수 있으며 용도에 따라 Glow 방전에서 Arc 방전까지 제어가 가능하다. 본 연구에서는 900 V의 1.22 nF 외부 Capacitor 방전과 400 V의 10 nF 외부 Capacitor 방전을 비교하였다. 방전 시 전압파형과 전류파형은 서로 다르지만 소비된 방전에너지는 340 ${\mu}J$로 동일하다. ICCD camera와 Spectrometer를 이용하여 비교 분석을 실시하였다. 방전 image 및 Optical Emission Spectroscopy 분석을 이용하여 플라즈마의 온도, 밀도 등을 시간적, 공간적으로 분석하였다.

• Fire Science and Engineering
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• v.10 no.2
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• pp.28-39
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• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

• Journal of Power Electronics
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• v.19 no.2
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• pp.413-430
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• 2019

This paper presents an optimum hybrid SVPWM technique for three-level voltage source inverters (VSIs). The proposed hybrid SVPWM technique aims to minimize total harmonic distortion (THD). A new parameter is introduced to incorporate the heterogeneous nature of switching sequences of SVPWM technique. The proposed hybrid SVPWM technique is implemented on a low-cost PIC microcontroller (PIC18F452) and verified experimentally with a 2 KVA three-phase three-level insulated gate bipolar transistor-based VSI. Optimum switching sequence results in the three-level inverter configuration are demonstrated. The proposed hybrid SVPWM technique improves the THD performance by 17.3% compared with the best available three-level SVPWM technique.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.1
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• pp.9-17
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• 2022

The series-connected semiconductor devices structure is one way to achieve a high voltage rating. However, a problem with voltage imbalance exists in which different voltages are applied to the series-connected switches. This paper proposed a new voltage balancing technique that controls the turn-off delay time of the switch by adding one bipolar junction transistor to the gate turn-off path. The validity of the proposed method is proved through simulation and experiment. The proposed active gate driver not only enables voltage balancing across a variety of current ranges but also has a greater voltage balancing performance compared with conventional RC snubber methods.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.133-140
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• 2024

This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.897-903
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• 2011

This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.