• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.90.2-90.2
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• 2015

We present the high-resolution spectrum of the S-type symbiotic star V455 Sco obtained with the Dupont telescope in 2014 June. We note that the Raman-scattered O VI ${\lambda}1032$ at $6825{\AA}$ exhibits a triple-peak profile. Adopting an accretion disk model with an additional contribution from a collimated bipolar outflow, we attempt to fit the profile. We propose that the blue and central peaks are formed via Raman-scattering of O VI line photons from the accretion flow and that the bipolar flow is responsible for the remaining red peak. It is also noted that V455 Sco exhibits the Raman-scattered He II features blueward of $H{\alpha}$ and $H{\beta}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.52-52
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• 2009

In this work, we demonstrate the modelling and simulation of the AlGaAs/GaAs quantum-well based light emitting transistor(LET). Based on the experimental and theoretical model, we have compared between a heterojunction bipolar transistor(HBT) structure with quantum wells in the base region and a HBT without quantum wells in the base region. For the purpose of optimizing device design, several analytic and numerical studies have been presented.

• Journal of Biomedical Engineering Research
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• v.30 no.4
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• pp.341-346
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• 2009

Cutaneous electrogastrography is the measurement of electrical activity of the stomach on the abdominal surface. The validity of cutaneous electrogastrography is dependent upon the quality of the recording technique. The locations of electrodes are an important issue. We examined the influences of the inter-electrode distance of bipolar leads on electrogastrography measurements. The sensitivity distributions of EGG leads were calculated based on a 2D body fat model and evaluated according to the region of interest sensitivity ratio (ROISR). We simulated the ROISR of the inter-electrode distance in relation to various body fat thicknesses. The distance between the electrodes was proportional to the distance between the ROI and the surface of the abdomen. The results imply that inter-electrode distance can be applied in electrogastrography according to human body fat thickness.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.148-150
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• 1993

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.89-95
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• 1990

A model for bipolar-CMOS buffer design is presented which offers a guideline for determining device sizes based on speed and capacitive load. Closed-form solutions for area optimization are obtained assuming high level injection and channel velocity limitation. The solutions and circuit simulations show that the areas of BICMOS buffers are optimized by scaling the emitter length and the channel width approximately in proportion with capacitive load.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.83.2-83.2
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• 2011

The emergence of a magnetic flux tube (flux emergence) is a process of transporting magnetic field from the solar interior to the atmosphere. This process naturally produces bipolar structure at the surface, in which emerging field lines simply connect opposite polarities, while observations suggest that the surface distribution of magnetic field is more complicated than a simple bipole. This study is aimed at solving this apparent mismatch between the model and observations, showing how the surface distribution changes from a simple bipolar distribution to a quadrupolar-like one, where a half-turn rotation of the polarity inversion line plays an important role. We explain the physical reason of this half-turn rotation and also discuss a possible configuration of filament magnetic field in terms of the quadrupolar-like structure formed via flux emergence.

• Journal of The Korean Astronomical Society
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• v.32 no.1
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• pp.55-63
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• 1999

NGC 6537 is an extremely high excitation bipolar planetary nebula. It exhibits a huge range of excitation from lines of [N I] to [Si VI]or [Fe VII], i.e. from neutral atoms to atoms requiring an ionization potential of $\~$167eV. Its kinematical structures are of special interest. We are here primarily concerned with its high resolution spectrum as revealed by the Hamilton Echelle Spectrograph at Lick Observatory (resolution $\~0.2{\AA}$) and supplemented by UV and near-UV data. Photoionization model reproduces the observed global spectrum of NGC 6537, the absolute H$\beta$ flux, and the observed visual or blue magnitude fairly well. The nebulosity of NGC 6537 is likely to be the result of photo-ionization by a very hot star of $T_{eff} \~ 180,000 K$, although the global nebular morphology and kinematics suggest an effect by strong stellar winds and resulting shock heating. NGC 6537 can be classified as a Peimbert Type I planetary nebula. It is extremely young and it may have originated from a star of about 5 $M_{\bigodot}$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.1-6
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• 2009

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.20-20
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• 2000

Back-propagation neural network (BPNN) is the most prevalently used paradigm in modeling semiconductor manufacturing processes, which as a neuron activation function typically employs a bipolar or unipolar sigmoid function in either hidden and output layers. In this study, applicability of another linear function as a neuron activation function is investigated. The linear function was operated in combination with other sigmoid functions. Comparison revealed that a particular combination, the bipolar sigmoid function in hidden layer and the linear function in output layer, is found to be the best combination that yields the highest prediction accuracy. For BPNN with this combination, predictive performance once again optimized by incrementally adjusting the gradients respective to each function. A total of 121 combinations of gradients were examined and out of them one optimal set was determined. Predictive performance of the corresponding model were compared to non-optimized, revealing that optimized models are more accurate over non-optimized counterparts by an improvement of more than 30%. This demonstrates that the proposed gradient-optimized teaming for BPNN with a linear function in output layer is an effective means to construct plasma models. The plasma modeled is a hemispherical inductively coupled plasma, which was characterized by a 24 full factorial design. To validate models, another eight experiments were conducted. process variables that were varied in the design include source polver, pressure, position of chuck holder and chroline flow rate. Plasma attributes measured using Langmuir probe are electron density, electron temperature, and plasma potential.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.