• 제목/요약/키워드: bilayer films

검색결과 104건 처리시간 0.032초

Effect of Humidity on Tribological Behavior of Si-DLC/DLC Multi-layer

  • Yi, J.W.;Kim, J.K.;Kim, S.S.;Kim, D.G.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.159-160
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    • 2002
  • To investigate the humidity effect on tribological behaviors of Si-DLC/DLC multi-layers, the samples were prepared using a system consisted of an ion-gun for deposition DLC films and a balanced magnetron sputter for introducing silicon atoms to Si-DLC films. The Si-DLC/DLC multi-layers were composed of pure DLC films and Si-incorporated DLC films alternatively and had different bilayer numbers. Hardness and residual stress were drastically decreased through the formation of Si-DLC/DLC multi-layers compared to those of the pure and Si-incorporated DLC films. Wear results obtained under the various humidity conditions (<10%, $40{\sim}50%$, and >85%) showed that the pure DLC film was largely depended on the humidity while the Si-DLC and the Si-DLC/DLC multi-layers were little affected by the environmental humidity. Although friction coefficients of all samples were increased with the relative humidity, the multi-layer films showed relatively lower friction coefficients that those of the single films.

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반투명 태양전지용 Al-Ti계 산화물 박막의 반사율 특성 개선에 관한 연구 (Study on Reflectance Improvement of Al-Ti Based Oxide Thin Films for Semitransparent Solar Cell Applications)

  • 이은규;정소운;방기수;이승윤
    • 한국전기전자재료학회논문지
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    • 제31권7호
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    • pp.437-442
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    • 2018
  • This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

PVD 방법에 의한 $TiN/TiSi_2$-bilayer 형성 (Formation of $TiN/TiSi_2$-bilayer by PVD method)

  • 최치규;강민성;김덕수;이광만;황찬용;서경수;이정용;김건호
    • 한국재료학회지
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    • 제8권12호
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    • pp.1182-1189
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    • 1998
  • Si 기판을 실온과 $600^{\circ}C$로 유지하면서 동시 증착 방법으로 (Ti+2Si)를 증착한 후 $N_2$ 분위기에서 Ti를 증발시켜 TiN($300\AA$)/(Ti+2Si, $300\AA$)/Si(100) 구조의 시료를 제작한 다음 초고진공에서 in-situ로 열처리하여 양질의 $TiN/TiSi_2$-bilayer를 형성하였다 열처리 온도가 $700^{\circ}C$ 이상에서 (111) texture 구조를 가지면서 화학 양론적으로 $Ti_{0.5}N_{0.5}$인 박막과 C54-$TiSi_2$박막이 형성되었다. $TiN/C54-TiSi_2/Si$ (100)구조의 계면은 응집 현상이 없이 평활하였으며, $C54-TiSi_2$상은 에피택셜 성장되었다. $TiN/TiSi_2$-이중구조막의 면저항은 열처리 온도에 따라 감소하였으며, $700^{\circ}C$ 이상의 열처리 온도에서는 면저항 값이 $2.5\omega/\textrm{cm}^2$ 였다.

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비정질 칼코게나이드박막으로서의 Ag 도핑효과에 대한 U-형 모델 (The U-type Model on Ag Doping effect in Amorphous Chalcogenide thin films)

  • 김민수;이현용;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.50-53
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    • 1995
  • In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

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Suppression of superconductivity in superconductor/ferromagnet multilayers

  • Hwang, T.J.;Kim, D.H.
    • 한국초전도ㆍ저온공학회논문지
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    • 제18권1호
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    • pp.33-36
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    • 2016
  • Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

Ag/AsGeSeS 박막의 홀로그래픽 데이터 격자 형성 (Holographic Data Grating formation of Ag/AsGeSeS thin films)

  • 여철호;이기남;신경;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.92-95
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    • 2005
  • The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

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Structural suitability of GdFeO3 as a magnetic buffer layer for GdBa2Cu3O7-x superconducting thin films

  • Park, H.S.;Oh, J.Y.;Song, B.H.;Kang, B.
    • 한국초전도ㆍ저온공학회논문지
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    • 제23권2호
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    • pp.14-18
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    • 2021
  • We investigated the structural suitability of GdFeO3 (GdFO) as a buffer layer for the GdBa2xCu3O7-x (GdBCO) superconducting films. GdFO films with different thicknesses and GdBCO thin films were all prepared by using a pulsed laser deposition technique. The analyses of X-ray diffraction and EXAFS data indicates that the c-axis parameter increases and the Fe-O bond length decreases with the GdFO thickness due to the compressive stain induced by the lattice mismatch between GdFO and STO substrate and as a result, the Debye-Waller factor, an index of disorder in the local structure near the Fe-O bond, increases with the GdFO thickness. However, for the GdBCO/GdFO bilayer structure, the Debye-Waller factor decreases as the GdFO thickness increases indicating a diminished disorder by the structural coupling between GdFO and GdBCO. These results indicate that an appropriate thickness of GdFO is required to be utilized as a magnetic buffer layer for the GdBCO superconducting films.

Spin-coated ultrathin multilayers and their micropatterning using microfluidic channels

  • Hongseok Jang;Kim, Sangcheol;Jinhan Cho;Kookheon Char
    • Korea-Australia Rheology Journal
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    • 제15권1호
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    • pp.1-7
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    • 2003
  • A new method is introduced to build up organic/organic multilayer films composed of cationic poly(allylamine hydrochloride) (PAH) and negatively charged poly (sodium 4-styrenesulfonate) (PSS) using the spinning process. The adsorption process is governed by both the viscous force induced by fast solvent elimination and the electrostatic interaction between oppositely charged species. On the other hand, the centrifugal and air shear forces applied by the spinning process significantly enhances desorption of weakly bound polyelectrolyte chains and also induce the planarization of the adsorbed polyelectrolyte layer. The film thickness per bilayer adsorbed by the conventional dipping process and the spinning process was found to be about 4 ${\AA}$ and 24 ${\AA}$, respectively. The surface of the multilayer films prepared with the spinning process is quite homogeneous and smooth. Also, a new approach to create multilayer ultrathin films with well-defined micropatterns in a short process time is Introduced. To achieve such micropatterns with high line resolution in organic multilayer films, microfluidic channels were combined with the convective self-assembly process employing both hydrogen bonding and electrostatic intermolecular interactions. The channels were initially filled with polymer solution by capillary pressure and the residual solution was then removed by the .spinning process.

마찰력현미경을 이용한 나노스케일 마멸시험 시 다이아몬드 탐침으로의 MoS2 마멸입자 전이현상 (Material Transfer of MoS2 Wear Debris to Diamond Probe Tip in Nanoscale Wear test using Friction Force Microscopy)

  • 송현준;임형우;성권일;안효석
    • Tribology and Lubricants
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    • 제35권5호
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    • pp.286-293
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    • 2019
  • In friction and wear tests that use friction force microscopy (FFM), the wear debris transfer to the tip apex that changes tip radius is a crucial issue that influences the friction and wear performances of films and coatings with nanoscale thicknesses. In this study, FFM tests are performed for bilayer $MoS_2$ film to obtain a better understanding of how geometrical and chemical changes of tip apex influence the friction and wear properties of nanoscale molecular layers. The critical load can be estimated from the test results based on the clear distinction of the failure area. Scanning electron microscopy and energy-dispersive spectroscopy are employed to measure and observe the geometrical and chemical changes of the tip apex. Under normal loads lower than 1000 nN, the reuse of tips enhances the friction and wear performance at the tip-sample interface as the contact pair changes with the increase of tip radius. Therefore, the reduction of contact pressure due to the increase of tip radius by the transfer of $MoS_2$ or Mo-dominant wear debris and the change of contact pairs from diamond/$MoS_2$ to partial $MoS_2$ or Mo/$MoS_2$ can explain the critical load increase that results from tip reuse. We suggest that the wear debris transfer to the tip apex should be considered when used tips are repeatedly employed to identify the tribological properties of ultra-thin films using FFM.

저온 원자층증착법으로 제조된 ZnO/TiO2 나노이층박막의 물성 연구 (Properties of ZnO/TiO2 Bilayer Thin Films with a Low Temperature ALD Process)

  • 노윤영;한정조;유병관;송오성
    • 대한금속재료학회지
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    • 제49권6호
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    • pp.498-504
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    • 2011
  • We examined the microstructure and optical properties of crystallized ~30 nm-ZnO/~10 nm amorphous $TiO_2$ nano bilayered films as nano electrodes were deposited at extremely low substrate temperatures of $150-210^{\circ}C$. The bilayered films were deposited on silicon substrates with 10 cm diameters by ALD (atomic layer deposition) using DEZn (diethyl zinc(Zn(C2H5)2)) and TDMAT (tetrakis dimethyl-amid $titanium(Ti(N(CH_3)_2)_4)$ as the ZnO and $TiO_2$ precursors, respectively, and $H_2O$ as the oxidant. The microstructure, phase, and optical properties of the bilayered films were examined by FE-SEM, TEM, XRD, AES, and UV-VIS-NIR spectroscopy. FE-SEM and TEM showed that all bilayered films were deposited very uniformly and showed crystallized ZnO and amorphous $TiO_2$ layers. AES depth profiling showed that the ZnO and $TiO_2$ films had a stoichiometric composition of 1:1 and 1:2, respectively. These bilayered films have optical absorption properties in a wide range of ultraviolet wavelengths, 250-390 nm, whereas the single ZnO and $TiO_2$ films showed an absorption range of 350-380nm.