• Title/Summary/Keyword: bilayer films

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Synthesis of Magnetic Nanoparticles of Fe3O4 and CoFe2O4 and Their Surface Modification by Surfactant Adsorption

  • Zhao, Shi Yong;Lee, Don-Geun;Kim, Chang-Woo;Cha, Hyun-Gil;Kim, Young-Hwan;Kang, Young-Soo
    • Bulletin of the Korean Chemical Society
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    • v.27 no.2
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    • pp.237-242
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    • 2006
  • $Fe_3O_4$ and $CoFe_2O_4$ magnetic nanoparticles have been synthesized successfully in aqueous solution and coated with oleic acid. The solid and organic solution of the synthesized nanoparticles was obtained. Self-assembled monolayer films were formed using organic solution of these nanoparticles. The crystal sizes determined by Debye-Scherre equation with XRD data were found close to the particle sizes calculated from TEM images, and this indicates that the synthesized particles are nanocrystalline. Especially, EDS, ED, FT-IR, TGA/DTA and DSC were used to characterize the nanoparticles and the oleic acid adsorption, and it was found that oleic acid molecule on the $Fe_3O_4$ nanoparticle is a bilayer adsorption, while that on $CoFe_2O_4$ nanoparticle is single layer adsorption. The superparamagnetic behavior of the nanoparticles was documented by the hysteresis loop measured at 300 K.

SUBLAYER THICKNESS DEPENDENCE OF THE OPTICALPROPERTIES OF NI/TI AND Fe/Zr MULTILAERS

  • Lee, Y.P.;Kim, K.W.;Lee, G.M.;Rhee, J.Y.;Szymansky, B.;Dubowik, J.;Kucherenko, A.Yu.;Kudryavstev, Y.V.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.70-74
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    • 1997
  • The study of the thickness dependence of the electron energy structure of Fe, Ni, Ti and Zr sublayers in Ni/Ti and Fe/Zr multilayers by using the experimental and computer simulated optical spectroscopy has been performed. A series of Ni/Ti and Fe/Ze multiayered films (MLF) with a bilayer period of 0.5 - 30 nm and constant (Ni/Ti) / different (Fe/Zr) sublayer thickness ratios were prepared by using computer-controlled double-pair target face-to-face sputtering onto a glass substrate at room temperature (RT) Computer simulation of the resulting optical properties of these MLF was carried out by solving of multireflection problem with a matrix method assuming either "sharp" interfaces resulting in rectangular depth profiles of the components or "mixed" (alloy-like) interfaces of variable thickness between pure-metal sublayers. Optical constants of pure bulk metals as well as equiatomic alloy interfaces were employed in these simulations. It was shown that the difference between experimental and simulated optical properties of the investigated MLF increases with decrease in sublayer thickness. This result allows to conclude that the electronic structures of sublayers below 4-5 nm thickness in mlf differ from the corresponding bulk metals.ponding bulk metals.

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A Study on the Formation fo Epitaxial $CoSi_2$ Thin Film using Co/Ti Bilayer (Co/Ti이중박막을 이용한 $CoSi_2$에피박막형성에 관한 연구)

  • Kim, Jong-Ryeol;Bae, Gyu-Sik;Park, Yun-Baek;Jo, Yun-Seong
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.81-89
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    • 1994
  • Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

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Formation of Thin $CoSi_2$by Layer Inversion of Co/Nb bi-layer (Co/Nb 이중층 구조의 막역전을 이용한 박막 $CoSi_2$의 형성)

  • Lee, Jong-Mu;Gwon, Yeong-Jae;Lee, Byeong-Uk;Kim, Yeong-Uk;Lee, Su-Cheon
    • Korean Journal of Materials Research
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    • v.6 no.8
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    • pp.779-785
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    • 1996
  • Thin $700^{\circ}C$films were formed through layer inversion of Co/Nb bilayer during rapid thermal annealing(RTA). The Nb interlayer seems to effectively prevent over-consumption of Si and to control the silicidation reaction by forming Co-Nb intermetallic compounds and removing the native oxide formed on Si substrate which interferes the uniform Co-Si interaction. The final layer structure of the Co/Nb bilayer after $700^{\circ}C$ RTA was found to be ${Nb}_{2}{O}_{3}$/${Co}_{2}$Si.CoSi/${NbCo}_{x}$/Nb(O, C)/${CoSi}_{2}$/ Si. The layer inversion and the formation of a stable CoSi, phase occurred above $700^{\circ}C$, and the Nb silicides were not found at any annealing temperature. These may be due to the formation of very stable Co-Nb intermetallic compounds and Nb oxides which limit the moving of Co and Si.

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Effects of Substrates on Nanofiltration Characteristics of Multilayer Polyelectrolyte Membranes (다층 고분자 전해질 막의 나노여과 특성에 미치는 지지체의 영향)

  • Hong, Seong-Uk
    • Membrane Journal
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    • v.18 no.2
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    • pp.185-190
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    • 2008
  • In a previous study, we probed the potential of poly(styrene sulfonate) (PSS)/poly(diallyldimethylammonium chloride) (PDADMAC) nanofiltration (NF) membranes for the separation of monovalent anions, with an emphasis on the selective rejection of $F^-$. Remarkably, deposition of $(PSS/PBADMAC)_4PSS$ films on porous alumina supports yielded membranes that exhibited $Cl^-/F^-$ selectivity > 3 with minimal $Cl^-$ rejection, and a solution flux of $3.5m^3/m^2$-day at 4.8 bar. When the number of PSS/PDADMAC bilayers was increased from 4.5 to 5.5, however, $F^-$ rejection decreased from 73% to 50% and $Cl^-/F^-$ selectivity dropped to 1.9. Addition of another bilayer to form $(PSS/PDADMAC)_6$ PSS films resulted in a significant increase in $Cl^-$ rejection to give essentially no $Cl^-/F^-$ selectivity. The decrease of selectivity with deposition of more than 4.5 bilayers was not expected and it was unclear whether this characteristic was substrate independent. In this study, to investigate the effect of substrates on NF performance of multilayer polyelectrolyte membranes, PSS/PDADMAC films were deposited on 50 kDa polyethersulfone (PES) ultrafiltration supports instead of porous alumina supports. The results indicate that, although fluoride rejection and the number of bilayers at which a maximum $F^-$ rejection occurs are different, the trend is similar for both types of substrates. Therefore, we can conclude that the M: characteristics of multilayer polyelectrolyte membranes may be substrate independent.

Photoelectric Properties of PbTe/CuPc Bilayer Thin Films (PbTe/CuPc 이층박막의 광전 특성)

  • Lee, Hea-Yeon;Kang, Young-Soo;Park, Jong-Man;Lee, Jong-Kyu;Jeong, Jung-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.67-72
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    • 1998
  • The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

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Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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The Exchange Bias of NiO/NiFe Thin Eilm by the Measurement of Anisotropic Mngnetoresistance (이방성 자기저항측정을 이용한 NiO/NiFe 박막의 교환결합연구)

  • Kim, Jong-Kee;Kim, Sun-Wook;Lee, Ky-Am;Lee, Sang-Suk;Hwang, Do-Guwn
    • Journal of the Korean Magnetics Society
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    • v.12 no.4
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    • pp.143-148
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    • 2002
  • We report an experimental evidence of coexistence of the strong and weak exchange couplings in unidirectional NiO/NiFe (antiferromagneticlferromagnetic) bilayer thin films. The exchange bias was measured by VSM and AMR techniques and then, analyzed into the strong and weak exchange couplings by means of a regression method. In NiO(60nm)/NiFe(10nm) film, the ratio of the weak exchange coupling field over the average exchange coupling field was found to be almost unchanged within it range from 0.2 to 0.4 irrespective to the strength of an applied field. However, the ratio increased among the samples with decreasing the average exchange coupling field due to the increment of the weak exchange coupling area.

Soild-state reaction in Ti/Ni multilayers

  • ;;;;Y.V.Kudryavtsev;B.Szymanski
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.140-140
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    • 1999
  • Ti/Ni multilayered films (MLF) are ideal for neutron optics particularly in neutron guides and focusing devices. This system also possesses the tendency of amorphization through a solid-state reaction (SSR). This behaviors are closely related to the electronic structures and both magneto-optical (MO) and optical properties of metals depend strongly on their electron energy structures. Mutual inter-diffusion of the Tin and Ni atoms in the MLF caused by a low temperature annealing should decrease the thickness of pure Ni, as well as change the chemical and atomic order in the reactive zone. The application of the MO spectroscopy to the study of SSR in the MLF allows us to obtain an additional information on the changes in the atomic and chemical orders in the interface region. The optical one has no restriction on the magnetic state of the constituent sublayers. Therefore, the changes in magnetic, MO and optical properties of the Ti/Ni MLF due to SSR can be expected. To the best of our knowledge, the MO and optical spectroscopies were not used for this purpose. SSR has been studied in the series of the Ti/Ni MLFs with bilayer periods of 0.65-22.2nm and constant ratio of the Ti to Ni sublayers thickness by using MO and optical spectroscopies as well as an x-ray diffraction. The experimental MO and optical spectra are compared with the computer-simulated spectra, assuming various interface models. The relative changes in the x-ray diffraction spectra and MO properties of the Ti/Ni MLF caused by annealing are bigger for the multilayers with "thick" sublayers, or the SSR with the formation of amorphous alloy takes place mainly in the Ti/Ni multilayers with "thick" sublayers, while in the nominal threshold thickness of the Ni-sublayer for the observation of the equatorial Kerr effect in the as-deposited and annealed Ti/Ni MLFs of about 3.0 and 4.5nm thick is explained by the formation of amorphous alloy during the deposition or the formation of the nonmagnetic alloyed regions between pure components as a result of the SSR. For the case of Ti/Ni MLF the MO approach is more sensitive for the determination of the thickness of the reacted zone, while x-ray diffraction is more useful for structural analyses.structural analyses.

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Recycling of Organic Materials Using Purification by Recrystallization for Solution-Processed OLEDs (재결정화법에 의한 유기물 재활용 및 이를 이용한 습식 OLED 제작)

  • Lee, Jin-Hwan;Hong, Ki-Young;Shin, Dong-Kyun;Lee, Jin-Young;Park, Jong-Woon;Seo, Hwa-Il;Seo, Yu Seok
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.1
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    • pp.65-69
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    • 2016
  • We have investigated the possibility of recycling of an organic material that is wasted during thermal evaporation. To this end, we have collected a wasted organic material (N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine(NPB)) from a vacuum chamber, purified it by recrystallization, and fabricated bilayer organic light-emitting diodes (OLEDs) with the recycled NPB. It is found that the surface roughness of thin films coated with the purified NPB is much enhanced. OLEDs fabricated by thermal evaporation of the purified NPB show lower device efficiency than OLEDs with the original NPB. However, the power efficiency of OLED fabricated by spin coating of the purified NPB is comparable with that of OLED with the original NPB. Therefore, such a recycling method by recrystallization would be more suitable for solution-processed OLEDs.