• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.65-73
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• 2006

This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.679-682
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• 2005

Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.1-8
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• 2012

This paper presents the accelerometer which is a key component of TPMS(Tire Pressure Monitoring System). Generally a piezoresistive accelerometer has characteristics of lower cost, better linearity and better immunity about the environmnet noise than a capacitive one. Three types of piezoresistive accelerometers are degined and simulated using ANSYS program. The best one is a piezoresistive sensor which is supported by four beams located at the center of the edge of the mass after comparing the characteristics of resonant frequency of the three types. Considering the sensor size and a simulated maximum stress and maximum displacement, the length of beams is set as $200{\mu}m$. The size of a piezoresistive accelerometer is $3.0mm{\times}3.0mm{\times}0.4mm$. The sensor output is characterized by measuring the output characteristic depending on angle. As a result the offset voltage of the accelerometer is 43.2 mV and its sensitivity is $42.5{\mu}V/V/g$. The temperature bias drift is measured. The shock durability of the sensor is 1500g and the measuring range is 0 ~ 60 g.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.4 s.346
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• pp.75-80
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• 2006

This paper has proposed a novel dual band transmitter module which can be operating either as an amplifier or as a frequency multiplier according to the input frequency. A conventional dual band transmitter consists of separate amplifiers operating at each frequency band, but the proposed dual band module operates as an amplifier for the IEEE 802.11b/g signal, and as a frequency doubler for the IEEE 802.11a signal according to input frequency and bias voltage. In this paper, we have obtained sharp stop band characteristics by using microstrip DGS(Defected Ground Structure) to suppress the fundamental frequency of the frequency doubler as well as the second harmonic of the amplifier. From measurement result, second harmonic suppression is below -59dBc in the amplifier mode, and fundamental suppression is below -35dBc in the frequency doubler mode. And the designed module has 17.8dBm output P1dB at 2.4GHz and 10.1dBm power for 5.8GHz output, and the output power in the two modes are 0.8dB and 2.8dB larger than the module with ${\lambda}g/4$ reflector, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.492-501
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• 2013

In this paper, a multi polarization reconfigurable microstrip antenna that can be used selectively for four polarizations(vertical polarization, horizontal polarization, right hand circular polarization, left hand circular polarization) at the S-band is presented. The proposed antenna consists of four PIN diodes and a microstrip patch with a cross slot and a circular slot and is fed by utiliting electromagnetic coupling between the microstrip patch and the feed line. The proposed antenna has a DC bias network to supply DC voltage to each PIN diode and the polarization can be determined by controlling the ON /OFF states of four PIN diodes. The fabricated antenna has a VSWR below 2 in the vertical polarization(3.17~3.21 GHz), the horizontal polarization(3.16~3.20 GHz), the left hand circular polarization (3.08~3.19 GHz), and the right hand circular polarization(3.10~3.2 GHz) frequency bands. The designed antenna has the cross polarization level higher than 20 dB, a gain over 5 dBi for the linear polarization states, and 3 dB axial ratio bandwidth wider than 50 MHz in the circular polarization states.

• Current Photovoltaic Research
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• v.4 no.2
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• pp.68-79
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• 2016

The power conversion efficiency of perovskite solar cells has remarkably increased from 3.81% to 22.1% in the past 6 years. Perovskite solar cells, which are based on the perovskite crystal structure, are fabricated using organic-inorganic hybrid materials. The advantages of these solar cells are their low cost and simple fabrication procedure. Also, they have a band gap of about 1.6 eV and effectively absorb light in the visible region. For the commercialization of perovskite solar cells in the field of photovoltaics, the issue of their long term stability cannot be overlooked. Although the development of perovskite solar cells is unprecedented, their main drawback is the degradation of the perovskite structure by moisture. This degradation is accelerated by exposure to UV light, temperature, and external bias. This paper reviews the aforesaid reasons for perovskite solar cell degradation. We also discuss the research directions that can lead to the development of perovskite solar cells with high stability.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.805-808
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• 2011

This paper presents a design of high-efficiency and high-power class E power transmitter. The transmitter is composed of 300 Watt class E power amplifier and AC-DC converter. The AC-DC converter converts 220 V and 60 Hz AC to a 290 V DC. The generated DC voltage is directly applied to a bias of the class E power amplifier. Because the converter does not have DC-DC converter unit, it has very high conversion efficiency of about 98.03 %. To minimize the loss at the output of the power amplifier, high-Q inductor was implemented and deployed to the output resonant circuit. As a result, the 13.56 MHz class E power amplifier has a high power-added efficiency of 84.2 % at the peak output power of 323.6 W. The overall efficiency of class E power transmitter, including the AC-DC converter, is as high as 82.87 %.

• Journal of Navigation and Port Research
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• v.26 no.1
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• pp.22-27
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• 2002

The 25 Watt hybrid MIC SSPA has been developed in the frequency rang from 1.6265 GHz to 1.6465 GHz for uplink of INMARST's earth station. To simplify the fabrication process, the whole system is designed of two parts composed of a friving amplifier and a power amplifier. The Motorolas MRF-6401 is used for driving part, the Motorolas MRF-16006 and MRF-16030 is used the power amplifier. We reduced weight and volume of high power amplifier through arranging the bias circuits in the same housing. The realized SSPA has more than 30 dB for gain within 20 MHz bandwidth, and the voltage standing wave ratios(VSWR) of input and output port are less than 1.7, respectively. The output power of 44 dBm is achieved at the 1 dB gain compression point of 106365 GHz These results reveal a high power amplifier of 25 Watt which is the design target. The Proposed SSPA manufacture techniques in this paper can be applied to the implementation of high power amplifiers for some radars and SCPC.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.12
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• pp.27-36
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• 2019

The demand for a low dispersion lens with a small refractive index and a high refractive index is increasing, and accordingly, there is an increasing need for a releasable protective film with high heat resistance and abrasion resistance. On the other hand, the optical industry has not yet established a clear standard for the manufacturing process and quality standards for mold-releasing protective films used in aspheric glass lens molding. Optical lens manufacturers treat this technology as proprietary information. In this study, an experiment was conducted regarding the optimization of ion etching, magnetron, and arc current at each source and filter part, and bias voltage in FCVA (filtered cathode vacuum arc)-based Ta-C thin film coatings. This study found that compared to iridium-rhenium alloy thin film sputtering products, the coating conditions were improved by approximately 50%, 20%, and 40% in terms of thickness, hardness, and adhesive strength of the film, respectively. The thin-film coating process proposed in this study is expected to contribute significantly to the development and utilization of glass lenses, which will help enhance the minimum mechanical properties and quality of the mold-release thin film layer required for glass mold surface forming technology.