• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.33-36
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• 2000

Active-controlled field emitter arrays (ACFEAs) are developed by monolithically integrating molybdenum field emitter arrays with amorphous silicon thin film transistors (a-Si：H TFTs) on glass substrate. Transfer and output characteristics of the fabricated ACFEAs showed that the emission currents of FEAs can be accurately controlled by the gate bias voltages of TFTs. Also, the emission currents of the ACFEAs kept stable without any fluctuations during the 30 min-operation.

• 한국수자원학회논문집
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• 제42권8호
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• pp.659-671
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• 2009

본 연구에서는 레이더 강우량 자료의 편차보정에 사용되는 G/R비의 정확도를 향상시키기 위하여 fuzzy c-means 방법을 사용한 자료의 군집화를 적용하였다. 대상 레이더자료는 광덕산 레이더기지의 자료로서 유효범위 100km이내의 자료를 대상으로 지상관측망인 기상청의 AWS(Automatic Weather System) 지점에서 관측한 자료와의 비교를 통하여 G/R비를 구하였다. G/R비를 구하는데 있어서 전체 유효범위를 대상으로 동일한 방법을 사용한 경우와 레이더 자료의 군집화를 통해서 지형적인 효과를 고려한 경우를 비교하였으며, AWS 실측강우량과 G/R비를 통한 레이더 강우량 자료의 비교를 위하여 절대상대오차와 평균제곱근오차 등을 비교분석하였다. 그 결과 전체유효범위를 대상으로 동일하게 G/R비를 적용하여 구한 레이더 강우량에 비하여 군집분석을 이용하여 지형효과를 고려한 G/R비를 적용한 레이더 강우량의 오차가 더 적게 나타났다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• 한국자기학회지
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• 제21권4호
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• pp.132-135
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• 2011

초연자성을 갖는 코네틱(NiFeCuMo) 박막을 NiFe 박막 사이에 삽입한 삼층박막 위에 반강자성체 FeMn을 증착한 다층박막에서 NiFe와 NiFeCuMo 박막의 두께에 따른 교환결합력과 보자력에 관한 특성을 조사하였다. 특히 NiFeCuMo 박막의 두께가 1 nm일 때 NiFe 박막 사이에 삽입한 삼층박막 위에 반강자성체 FeMn을 증착한 다층박막의 교환결합력은 최댓값을 나타내었다. 고정층과 자유층에 각각 NiFeCuMo 박막을 삽입하여 초연자성의 바이오센서용 거대자기저항-스핀밸브(giant magnetoresistive-spin valves; GMR-SV) 소자를 개발할 수 있는 가능성을 보여주었다.

• 한국항공우주학회지
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• 제46권9호
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• pp.742-751
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• 2018

본 논문은 지대지 교전상황에서 유도탄 탐색기의 Field-of-View(FOV)와 가속도 제한을 고려하여 충돌각을 제어하는 시변 편향 비례항법 유도법칙(Time Varying Biased Proportional Navigation Guidance Law)을 제안하고 있다. 제안한 유도법칙은 FOV 제한을 고려하여 3단계로 구성이 되는데 각 단계에서 편향이 가속도에 직접적인 영향을 미치기 때문에 편향을 생성하는데 있어서 단계가 넘어갈 때 전 단계의 마지막 편향이 다음 단계의 시작 편향이 되도록 하였다. 또한, 교전 상황과 물리적 구속조건을 고려하여 충돌각 도달 여부를 판단하는 로직 또한 설명하고 있다.

• Genomics & Informatics
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• 제20권4호
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• pp.43.1-43.18
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• 2022

Atropa belladonna is a valuable medicinal plant and a commercial source of tropane alkaloids, which are frequently utilized in therapeutic practice. In this study, bioinformatic methodologies were used to examine the pattern of coding sequences and the factors that might influence codon usage bias in the chloroplast genome of Atropa belladonna and other nightshade genomes. The chloroplast engineering being a promising field in modern biotechnology, the characterization of chloroplast genome is very important. The results revealed that the chloroplast genomes of Nicotiana tabacum, Solanum lycopersicum, Capsicum frutescens, Datura stramonium, Lyciumbarbarum, Solanum melongena, and Solanum tuberosum exhibited comparable codon usage patterns. In these chloroplast genomes, we observed a weak codon usage bias. According to the correspondence analysis, the genesis of the codon use bias in these chloroplast genes might be explained by natural selection, directed mutational pressure, and other factors. GC12 and GC3S were shown to have no meaningful relationship. Further research revealed that natural selection primarily shaped the codon usage in A. belladonna and other nightshade genomes for translational efficiency. The sequencing properties of these chloroplast genomes were also investigated by investing the occurrences of palindromes and inverted repeats, which would be useful for future research on medicinal plants.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1290-1292
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• 1995

A cylindrical-post magnetron sputtering system was designed for pipe inner coating. The discharge condition was depended on the gas pressure, magnetic field and pipe diameter. At given discharge current, discharge voltage increased a little with pipe diameter. The electron temperature and floating potential increased with magnetic field. The impact ion energy on the pipe increased with bias voltage. The TiN thin-film of $2{\mu}m$ thickness was formed by cylindrical-post magnetron sputtering system under the conditions of the pressure of 5mTorr, the applied voltage of 700V, the discharge current of 500mA, the magnetic field of 300G, and the bias voltage of -100V.

• 한국자기학회지
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• 제26권2호
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• pp.50-54
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• 2016

본 연구에서는 교환 결합력을 갖는 CoFe/MnIr 박막 재료의 각도에 따른 강자성 공명 선폭 변화 특성을 분석하였다. 선폭의 최대 및 최소값은 교환 결합력에 의한 일방 이방성의 자화 곤란축 및 용이축 방향에서 각각 관측되었으며, 고정된 MnIr의 스핀에 의한 교환 바이어스 자기장의 각도 의존성과 일치하였다. 따라서, 최대 선폭은 고정된 MnIr 스핀의 반대 방향에서 자기장 방향으로 꼬여있는(twist) CoFe의 자화에 기인한다. 한편, CoFe 단일 박막에 비하여 증가된 최소 선폭은 각도 의존성이 없는 회전 이방성 자기장과 관련되며, 선폭 증가의 원인은 MnIr 입도의 자화 용이축 분포 특성으로 설명된다.

• 한국세라믹학회지
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• 제32권3호
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국세라믹학회지
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• 제35권7호
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• pp.679-684
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• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.