• Title/Summary/Keyword: bias field

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Consequentiality and Hypothetical Bias in Contingent Valuation Method: An Experimental Investigation (가상가치평가법에서의 결과수렴성과 가상편의)

  • Lee, Jinkwon;Hwang, Uk
    • Environmental and Resource Economics Review
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    • v.29 no.1
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    • pp.1-22
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    • 2020
  • While contingent valuation method (CVM) has been widely used for non-market valuations, it has been argued that it may suffer from hypothetical bias. However, if CVM respondents believe that their responses could affect the real consequence, the method could satisfy consequentiality. If a CVM satisfies a sufficiently high consequentiality, hypothetical bias could disappear as shown by some previous studies. In this study, we experimentally compare the willingness to pay (WTP) for donation of a relatively high consequentiality group with that of a relatively low consequentiality group for Korean university students. We find that both the existence probability and the size of hypothetical bias are lower for the high consequentiality group. This result implies that a CVM for a real policy including environmental policies could be free from hypothetical bias because its consequentiality would be relatively high, and warrants a future field study investigating the effect of consequentiality on hypothetical bias.

The Effect of confirmation bias on Intentionality Judgment: The Role of Crime Typicality and Seriousness (고의성 판단에 확증편향이 미치는 영향: 범죄의 전형성 및 심각성의 역할)

  • Choi, Seung-Hyuk
    • Korean Journal of Culture and Social Issue
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    • v.26 no.3
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    • pp.329-349
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    • 2020
  • Confirmation bias is well known to be the cause of widespread misjudgment in the field of forensic decision-making. In this study, we examined the psychological mechanisms by which confirmation bias affects intentionality judgment in serious injury and death cases that combine the moral characteristics of the perpetrator and victim differently. As a result, participants perceived the case as a more typical criminal case when both the perpetrator and victim were bad people, and gave higher intention to perpetrators' actions in these typical crimes. In particular, it was found that people with a high degree of confirmation bias highly judge the intention of the offenders in a consistent way with the stereotype of criminal cases. However, in serious criminal cases, the moderate effect of confirmation bias has disappeared and only the effect of crime typicality has existed. Finally, we discussed implications of this study and ways to reduce bias in intentionality judgment.

Study of the Perpendicular Magnetic Anisotropy and Exchange Bias in [Pd/Co]5/FeMn Superlattices ([Pd/Co]5/FeMn 초격자 다층 박막구조에서 수직 자기이방성과 교환바이어스에 관한 연구)

  • Kim, Ka-Eon;Choi, Hyeok-Cheol;You, Chun-Yeol
    • Journal of the Korean Magnetics Society
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    • v.22 no.1
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    • pp.1-5
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    • 2012
  • We investigate the exchange bias effect in $[Pd/Co]_5$ superlattice structures which are representative system of the perpendicular magnetic anisotropy. We fabricate Si/$[Pd/Co]_5$/FeMn structures, and study the exchange bias variations by measuring hysteresis loop variations with thickness of FeMn layer. In order to optimize the perpendicular magnetic anisotropy, we fix the thickness of Pd with 1.1 nm and investigate the dependence of the perpendicular magnetic anisotropy on the ferromagnetic Co layer thickness. As results, we find that the biggest coercivity in 0.3 nm of Co layer without FeMn layer. The biggest exchange bias field is found for 0.3 nm of Co layer when we change the Co thickness with fixed FeMn thickness. When we vary thickness of FeMn layer, the biggest coercivity is found for 5 nm of FeMn layer. No exchange bias is observed when the FeMn layer is thinner than 3 nm, and the exchange bias field increases with FeMn layer thickness continuously up to 15 nm.

The Influences of Deteriorated Visuo-spatial Attention Allocation Ability Caused by Aging on Emotional Perception Bias (노화에 의해 저하된 시공간 주의배분능력이 정서지각 편향성에 미치는 영향)

  • Kim, Sang-Yub;Jung, Jae-Bum;Nam, Ki-Chun
    • Science of Emotion and Sensibility
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    • v.23 no.4
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    • pp.3-20
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    • 2020
  • The purpose of this study was to investigate the effect of aging on visuo-spatial attention allocation ability and emotional perception bias. We used the useful field of view (UFOV) task to measure the visuo-spatial attention allocation ability and the emotional perception task to measure positive and negative emotional perception bias. A total of 48 participants took part in this study with 23 participants in the senior group and 25 in the junior group. The senior group showed slower response time and lower accuracy than the junior group in the UFOV task, indicating that the senior group had lower visuo-spatial attention allocation ability than the junior group. In the emotional perception task, the senior group showed both positive and negative emotional perception bias more than the junior group. The correlation analysis showed that the negative emotional perception bias for accuracy in the emotional perception task showed a positive correlation with the response time to the stimuli presented in the visual angle 30° in the UFOV task (r=.289). In addition, positive emotional perception bias for the accuracy in the emotional perception task showed a positive correlation with the accuracy of the stimuli presented in the visual angles 10°, 20°, and 30° in the UFOV task (r=.305, r=.322, and r=.299, respectively). However, it showed a negative correlation with the response time of the stimuli presented in the same location in the UFOV task (r=-.345, r=-.295, r=-.308). These results suggest that aging is associated with a decrease in the visuo-spatial attention allocation ability and perceptual bias toward positive and negative emotions. In addition, the positive and negative emotional perception biases associated with aging are potentially related to the reduced visuo-spatial attention allocation ability.

Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model

  • Jang, Moon-Gyu;Lee, Jung-Hwan
    • ETRI Journal
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    • v.24 no.6
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    • pp.455-461
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    • 2002
  • This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

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A practical plan of randomized response technique (확률화 응답기법의 실용화 방안)

  • 류제복;이계오;이기성
    • The Korean Journal of Applied Statistics
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    • v.8 no.1
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    • pp.9-26
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    • 1995
  • In surveys on sensitive issues which respondents are unwilling to answer, response bias usually occur since respondents tend to answer untruthfully or evade answer. Warner(19650 introduced the Randomized Response Technique (RRT) which protected the privacy of the individual respondent to reduce these response biases. Though this technique are theoretically good it has some problems in applying this technique to field survey. Therefore in order to apply easily RRT to practical survey we present the practical plan through comparing and analyzing the several cases which RRT was applied. Also we take the field survey according to this plan.

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Photocurrent of CdSe nanocrystals on singlewalled carbon nanotube-field effect transistor

  • Jeong, Seung-Yol;Lim, Seung-Chu;Lee, Young-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.40-40
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    • 2010
  • CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.

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Diamond-Like Carbon Films Prepared by Magnetized Inductively Coupled Plasma (자화된 유도 결합형 플라즈마를 이용한 다이아몬드성 탄소박막 증착)

  • Kim, Joong-Kyun;Lee, Ho-Jun;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.323-325
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    • 1995
  • An Inductively Coupled Plasma(ICP) was employed to prepare the Diamond-Like Carbon film with $CH_4$ gas. We observed the changes of mechanical, optical properties and internal stress of the films according to the variation of discharge power and negative-self bias. When weak magnetic field is applied, the properties of film are observed to change drastically. In magnetized case, the micro-hardness and the internal stress increase up to critical point and droped down in marked contrast to unmagnetized case. It suggests that large amount of ion flux exists due to high dissociation rate of the reactive radicals in plasma with magnetic field as reported elsewhere. As a result of FT-IR absorption measurement it could be confirmed that the $CH_x$ bonding and the micro-hardness and the internal stress decreased with the increase of negative-self bias.

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Cross Sectional Thermal and Electric Potential Imaging of an Operating MOSFET (작동중인 모스 전계 효과 트랜지스터 단면에서의 상대온도 및 전위 분포 측정)

  • Kwon, Oh-Myoung
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.27 no.7
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    • pp.829-836
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    • 2003
  • Understanding of heat generation in semiconductor devices is important in the thermal management of integrated circuits and in the analysis of the device physics. Scanning thermal microscope was used to measure the temperature and the electric potential distribution on the cross-section of an operating metal-oxide-semiconductor field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The measurement results showed that as the drain bias was increased the hot spot moved to the drain. The density of the iso-potential lines near the drain increased with the increase in the drain bias.

Finite Element Analysis of Electromagnetic Field Equation with Speed E.M.E (속도기전력을 갖는 전자력 방정식의 유한요소 해석)

  • Hahn, Song-Yop
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.36 no.4
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    • pp.252-258
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    • 1987
  • Time periodic finite element solutions for sinusoidally excited electromagnetic field problems in moving media are presented. Solutions by the Galerkin method contain spurious oscillations when grid Peclet number is more than one. To suppress these oscillations an upwind finite element method using two different time periodic test functions is introduced. One is multiplied to second and first-order space derivative terma and the other to the time derivative term. Test functions are obtained from trial functions by adding or subtracting quadratic bias functions with appropriate scaling factors. Phase differences are considered between trial functions and bias functions. For simple interpretations of the phase differences, complex scaling factors are used. The proposed method is developed to give nodally exact solutions for uniform grid spacing in one dimensional problems. Based on the one dimensional results, a two dimensional upwinding scheme is also derived.

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