• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.308-312
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• 2007

Ferroelectric, magnetic, and magnetoelectric effects for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics have been investigated. The data show that magnetoelectric polarization coefficient, ${\alpha}_p$ is due to a linear coupling between polarization and magnetization, and that ${\alpha}_p$ is independent of dc magnetic bias and ac magnetic field. The values of ${\alpha}_p$ and magnetic induced susceptibility for lanthanum modified $BiFeO_3-PbTiO_3$ ceramics are much larger than those of single $BiFeO_3$ crystal. We believe that the magnetoelectric effect is significantly enhanced by breaking of the cycloidal spin state of a long-period spiral spin structure due to randomly distributed charged imperfections.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.248-256
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• 1995

The electrical conducton in the sintered 3Bi2O3.WO3 solid electrolyte was investigated by measuring the conductivity and ionic transport number. The electrical conductivity was about three to ten times higher than that of YSZ at temperatures between 300 and 80$0^{\circ}C$. D.C. polarization method confirmed that 3Bi2O3.WO3 was predominantly an ionic conductor. Unlike the instability of high conductive fcc phase in the rare-earth oxide-Bi2O3 or Y2O3-Bi2O3 systems at temperature below $700^{\circ}C$, fcc phase in the 3Bi2O3.WO3 exhibited no transformation even after annealing over 900 hrs at 600 and $650^{\circ}C$. Two samples which had different grain sizes showed almost the same conductivity. This result suggests that the electrical properties of grain and grain boundry were very similar.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.128-128
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• 2016

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.127-134
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• 2015

In this paper, we propose 2.6 GHz single band dual polarization MIMO omni antenna for in-building applications. The proposed antenna operates at 2.6 GHz single LTE band, Up-link 2.52~2.54 GHz and Down-link 2.64~2.66 GHz. Horizontal and vertical polarizations of the antenna has been, respectively, constructed by the synthesis of four folded loop antennas and the folded monopole antenna. The height of the MIMO omni-directional antenna is minimized to be less than ${\lambda}/13.5$ from the ground. The measurement results show excellent MIMO omni antenna performance of 2.85 dBi vertical polarization gain, 2.29 dBi horizontal polarization gain, and 19.25 dB port isolation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.138-144
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• 2008

In this paper, we propose a novel single-feed dual-band circular polarization square patch antenna for GPS(global positioning system)/DMB(digital multimedia broadcasting) receiver. The proposed antenna has folded slots at the 4 corners and a diagonal slot at the center of the square patch. The measured -10 dB impedance bandwidths of the proposed antenna were 84 MHz ranging from 1.516 GHz to 1.600 GHz for the low frequency band(GPS) and 109 MHz ranging from 2.596 GHz to 2.705 GHz for the high frequency band(DMB). The measured peak linear antenna gains of the proposed antenna were 6.23 dBi at 1.575 GHz for GPS and 6.97 dBi at 2.642 GHz for DMB band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1023-1029
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• 2010

In this paper, we proposed the broadband polarization diversity antenna operating in the PCS, WCDMA and WiBro band for mobile base station. We designed the antenna using the dipole antenna of the square loop type and microstrip feeding structure. Additionally, we used the choke box to remove the distortion of radiation patterns by the reflector structure when operating broadband. The simulation was performed using MWS in a commercial tool of CST company and the antenna was fabricated on a teflon substrate with 3.33 of the relative permittivity. The proposed antenna has the bandwidth of 640 MHz(from 1.75 to 2.39 GHz) when VSWR is below 1.5. At the operating bands, the interisolation between the cross-pair radiators is less than -25 dB and the maximum gains for PCS, WCDMA and WiBro band are 8.9, 8.2 and 8.6 dBi, respectively.