• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.195-200
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• 1998

We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.694-705
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• 2006

In this paper, the linear active phased array antenna system operated in Ku DBS band was designed and experimented. The antenna system was composed of sixteen radiating active channels and Wilkinson power combiners with 16-channel inputs, a stabilizing DC bias and phase control board. Electrical beams of the antenna system can be formed by controling the phase-states of 3-bit digital phase shifter inside each active channel by virtue of the phase control board. The amplitude and phase deviations measured between active channels were less than ${\pm}0.8dB$ and ${\pm}15^{\circ}$, respectively, and the noise figure of each active channel was measured less than 1.2 dB in the operating band. The measured performances of the overall antenna system showed the antenna gain of more than 23.07 dBi and the sidelobe level of less than -11.17 dBc, and the bore-sight cross-polarization level of less than -12.75 dBc in the operating band. Also, by phase-controlling active channels, the beam scan patterns at $10^{\circ},\;20^{\circ},\;30^{\circ}$ were measured, and the losses caused by the corresponding beam scanning were 1.1 dB, 2.5 dB and 3.6 dB from the measurements, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.7
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• pp.52-60
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• 2009

In this pater, a CP-DRA(Circularly Polarized Dielectric Resonator Antenna) using cross-slot-feed is studied to enhance the gain and axial ratio bandwidth. First, a single layer CP-DRA is studied as a reference for comparison. Then a new type of multilayer CP-DRA is proposed to enhance the gain and axial ratio bandwidth. In consideration of the antenna gain enhancement, the spacing between the elements of the multilayer CP-DRA is examined through analysis of the radiation performance of a 2$\times$2 planar amy of DRAs with a spacing of 0.7$\lambda_0$ and 1.2$\lambda_0$ using CST Microwave Studio. The measured result shows that the gain and bandwidth of the multilayer structure is approximately twice that of the single layer one. In the case of the array antenna in which the spacing between multilayer CP-DRA element is 1.2$\lambda_0$, a grating lobe is reduced, in contrast to what we can expect from a conventional antenna array. The gain is 13.4dBi and axial ratio bandwidth is 0.8GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.1006-1014
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• 2000

Hemisphere type Luneberg lens antenna with a reflector(frequency : 9.375 GHz, -3 dB beam width 6$^{\circ}$, diameter 30.3 cm(about 10 A), which is miniaturized and lightweightized by attaching a reflector on a section of half the Luneberg lens antenna, is designed and fabricated on the basis of Luneberg lens antenna from which easy beam pointing is acquired only by movement of 1st radiator. Measurement shows -3dB beamwidth is 6.1$^{\circ}$ in case of E-plane and 5.5$^{\circ}$ in case of H-plane. These are good agreements with expected value. Gain of this antenna is 26dBi(Aperture efficiency for uniform distribution : $\pi$ = 44.97%) which is greater than that of 1st radiator(Rectangular microstrip antenna) by 20.4 dB. And, after calculating the approximated pattern of the 1st radiator, far-field pattern, whose source is the second aperture source farmed from the approximated pattern of the 1st radiator is computed. Comparing this far-field pattern with the expected pattern, a (relatively) good agreement is observed. Circular polarization Luneberg lens antenna is also manufactured by making 1st radiator so that it has the characteristics of LHCP and RHCP radiation. The results are as followings : -3 dB beamwidth 5.8$^{\circ}$ , side lobe level -15.3 dB, isolation between LHCP and RHCP radiation 2543, axial ratio 2 dB bandwidth about 1.4 GHz(14.9%).

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• Proceedings of the KSRS Conference
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• 2008.10a
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• pp.441-444
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• 2008

This paper describes the development of a circularly polarized microstrip antenna, as a part of the Circularly Polarized Synthetic Aperture Radar (CP-SAR) sensor which is currently under developed at the Microwave Remote Sensing Laboratory (MRSL) in Chiba University. CP-SAR is a new type of sensor developed for the purpose of remote sensing. With this sensor, lower-noise data/image will be obtained due to the absence of depolarization problems from propagation encounter in linearly polarized synthetic aperture radar. As well the data/images obtained will be investigated as the Axial Ratio Image (ARI), which is a new data that hopefully will reveal unique various backscattering characteristics. The sensor will be mounted on an Unmanned Aerial Vehicle (UAV) which will be aimed for fundamental research and applications. The microstrip antenna works in the frequency of 1.27 GHz (L-Band). The microstrip antenna utilized the proximity-coupled method of feeding. Initially, the optimization process of the single patch antenna design involving modifying the microstrip line feed to yield a high gain (above 5 dBi) and low return loss (below -10 dB). A minimum of 10 MHz bandwidth is targeted at below 3 dB of Axial Ratio for the circularly polarized antenna. A planar array from the single patch is formed next. Consideration for the array design is the beam radiation pattern in the azimuth and elevation plane which is specified based on the electrical and mechanical constraints of the UAV CP-SAR system. This research will contribute in the field of radar for remote sensing technology. The potential application is for landcover, disaster monitoring, snow cover, and oceanography mapping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.697-700
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• 2004

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

• The Journal of Korean Philosophical History
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• no.30
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• pp.87-121
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• 2010

Soang excavates the idea of equality in our national indigenous thoughts and the theoretical structure of threefold egalitarianism in our traditional Confucianism. He also digests diverse Western thoughts and introduces some of them into his theory. At first sight, his theory looks like an assembly of diverse Western thoughts. However, he always justifies it with our traditions. Even if his theory and political position fails in his time, it gives us valuable instructions. First, if the failure of his political center position means an opening road toward Korean division, his political position must be a future guide for the reunification of Korean peninsula. Second, if the bi-polarization is a serious disease of our society, then his view of egalitarianism must be a efficient guide for curing our society. Third, as European Union shows us, the kingly view of world family is a feasible guide for realizing world peace in future.

• Corrosion Science and Technology
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• v.20 no.6
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• pp.373-383
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• 2021

The effect of Cr addition to high Mn steel on flow-accelerated corrosion (FAC) behavior in a neutral aqueous environment was evaluated. For comparison, two types of conventional ferritic steels (API X70 steel and 9% Ni steel) were used. A range of experiments (electrochemical polarization and impedance tests, weight loss measurement, and metallographic observation of corrosion scale) were conducted. This study showed that high Mn steel with 3% Cr exhibited the highest resistance to FAC presumably due to the formation of a bi-layer scale structure composed of an inner Cr enriched Fe oxide and an outer Mn substituted partially with Fe oxide on the surface. Although the high Mn steels had the lowest corrosion resistance at the initial corrosion stage due to rapid dissolution kinetics of Mn elements on their surface, the kinetics of inner scale (i.e. Cr enriched Fe oxide) formation on Cr-bearing high Mn steel was faster in dynamic flowing condition compared to stagnant condition. On the other hand, the corrosion scales formed on API X70 and 9% Ni steels did not provide sufficient anti-corrosion function during the prolonged exposure to dynamic flowing conditions.