• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.12
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• pp.2763-2768
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• 2013

In this paper, a design method for a compact slot antenna for 5.8 GHz RFID band (5.725-5.875 GHz) is studied. The proposed slot antenna is size-reduced by bending both ends of the straight slot in "I"-shape, and a rectangular feed patch is located inside the slot. The effects of slot length, location of feed patch, and width and length of feed patch on the antenna performance are examined. A prototype antenna with optimized parameters for 5.8 GHz band is fabricated on an FR4 substrate and tested experimentally to verify the results of this study. The experimental results show that the frequency band for a VSWR < 3 ranges 5.72-6.13 GHz (bandwidth 410 MHz), and it corresponds fairly well with the simulated band 5.64-5.97 GHz (bandwidth 330 MHz). The fabricated antenna shows good radiation performance such as maximum power density in both directions normal to the slot plane, low cross-polarization level of < -20 dB, and realized gain > 0 dBi within the frequency band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.493-496
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• 2000

This study is about the design and fabrication of optical voltage sensor modules improved in the insulation reliability, where we adopted the space-division voltage system using the auxiliary electrodes to apply the uniform electric fields to the BSO, the device of which the polarization state varies with the variation of refractive index in the electric fields. We measured the output of fiber-Optic Voltage Sensors with the temperature changes in the thermostatic oven. And we measured the output of Fiber-Optic Voltage Sensors after setting its up in the disttibuion automated switch being apply 60Hz alternating voltage from 6.6kV to 17.BkV. In result, measured error characteristic is good, so we can judge it is applicable to the practical case

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.32.1-32.1
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• 2018

Novel soft magnetic materials can be achieved by altering material properties such as morphology, composition, crystallinity, and grain size of soft magnetic alloys. Especially, magnetic properties (i.e., saturation magnetization, coarcivity) of soft magnetics are significantly affected by grain boundaries which act as a control of magnetic domain wall movement. Thus, we herein develop a two-step electroless plating method to control morphology and grain size of FeCo films for excellent magnetic properties. Accordingly, the chemical composition to control the degree of polarization of FeCo alloys was altered by electroless deposition parameters; for example, electrolyte concentration and temperature. The grain size and crystallinity of FeCo alloys was dramatically affected by the reaction temperature because the grain growth mechanism dominantly occurs at $90^{\circ}C$ where as the neucleation only happens at $50^{\circ}C$. By simply controlling the temperature, the micron-sized FeCo grains embedded FeCo film was synthesized where the large grains allow high magnetization originated from larger magnetic domain with low corecivity and the nano-sized grains allow excellent soft magnetic properties due to the magnetic correlation length.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.66-70
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• 2004

The Sr$\_$0.7/Bi$\_$2.3/Ta$_2$O$\_$9/(SBT)thin films are deposited on Pt-coated electrode (Pt/TiO$_2$/SiO$_2$/Si) using a RE magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing times were studied. As a result of conducting the X-ray diffraction analysis and the electron microscopy analysis, the perovskite phase began to grow from 10 minutes after annealing the specimen, and excellent crystallization was accomplished at 60 minutes after annealing the specimen. The remanet polarization (2P$\_$r/) value and the coercive electric field (E$\_$c/) of the SBT thin film specimen showed the most excellent characteristics at 60 minutes after annealing the specimen, which were approximately 12.40 C/$\textrm{cm}^2$ and 30 kV/cm, respectively. The leakage current density of the SBT thin film specimen as annealed for 60 minutes was approximately 2.81${\times}$10$\^$－9/A/$\textrm{cm}^2$.