• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.87-93
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• 1986

Yttria-bismuth-stabilized zirconia was investigated with respect to the amount of $Bi_2O_3$ addition in the ran-ge of 0.5~5mol% to the base composition of $(ZrO_2)_{0.92}(Y_2O_3)_{0.08}.Bismuth was introduced into the ma-terial with $Bi_2O_3-SiO_2$ glasses in order to reduce the evaporation of components. The sinterbility evaporation of components phase formation and microstructure were evaluated depending on the amount of $Bi_2O_3-SiO_2$ glass addition. Two probe A. C conductivity measurement was subjected to all the specimens and the result was discussed on the possible substitution of $Bi^{3+}$ for $Zr^{4+}$ and interistial $Si^{4+}$ in the fluorite structure of zirconia crystal there-upon the possible change in the capability of oxygen transference within the material. It was found that the addition of $Bi_2O_3$ could improve the sinterbility of material very much while not so much.oxygen sensing material suitable for relative low temperature firing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1028-1034
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• 1998

Bi-2223 superconductor is known as one of the candidates for practical superconducting wires. Ag-sheathed Bi-2223 superconducting wires were fabricated using the powder-in-tube(PIT) method. When the 19-filaments wire was immersed in liquid nitrogen(77K), maximum critical current density Jc of 62 A/$mm_2$ at 0T was achieved. The critical current density has been shown to depend on the mechanical properties such as tensile stress and bending strain in Ag-sheathed Bi-2223 superconducting wires. The tensile strain for Jc degradation onset was in the range of 0.12~0.3%. In the case of 19-filaments wire, the bending strain is estimated to be smaller than 0.3% for the reasonable Jc value. The observed degradation of the critical current density due to strain effect is inevitable and can be attributed to the formation of microcracks within the superconducting core.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $PO_3$. The correlation diagrams of the BSCCO phases appeared against $T_{sub}$ and $PO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi220l and Bi2223 phases as well as Bi2212 one come out as stable phases depending on $T_{sub}$ and $PO_3$. From these results, the thermodynamic evaluations of ${\Delta}H$ and ${\Delta}S$ S, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.252-255
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_{2}O_{3}$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_{2}O_{3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.77-79
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• 1999

Bi$_2$Sr$_2$CaCu$_2$O(Bi-2212) thick films were fabricated on Y211 substrate by screen printing method. The aim of the study was to fabricate superconducting thick films on Y211 substrate by MPMG process. For this study, patterned samples by screen printing method were heated with MPMG process. The thickness of Bi2212 on substrate was about 20 ${\mu}{\textrm}{m}$ and these samples showed many Bi- 2212 phases.

• Corrosion Science and Technology
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• v.5 no.3
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• pp.94-98
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• 2006

The next generation nuclear power reactor will use Pb-Bi as the cooling material. The steel structure materials such as HT-9 used in the reactor suffer from corrosion when they are exposed to high temperature Pb-Bi. Therefore corrosion should be prevented to use Pb-Bi as the coolant material without any safety problem. One method is to control the oxygen content in Pb-Bi. An appropriate amount of oxygen in Pb-Bi can produce a thin oxide layer on steel, and this layer protects the steel from corrosion attack. Since the required oxygen content in Pb-Bi is in the range of $10^{-5}$ to $10^{-7}$ wt%, this small oxygen content can be controlled by flowing a mixture of hydrogen gas and water vapor. The stagnant corrosion test of HT-9 samples was performed by controlling the oxygen content up to 2,000 hours. The corrosion behavior of HT-9 was analyzed at the temperatures of $500^{\circ}C$ and $650^{\circ}C$ with a reduced condition and a oxygen content of $10^{-6}$ wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.304-307
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• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.