• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.308-311
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• 2001

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases show similar $T_{sub}$ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.108-111
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• 2000

Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.311-315
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• 2000

Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.49-52
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cased, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$ and it was distributed in the reeone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.327-328
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• 2005

Bi-system thin films are prepared by ion beam sputtering technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure($PO_3$). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.143-143
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• 2007

Bi-Te계 화합물은 상온영역($250^{\circ}C$이하)에서 열전특성이 우수하여, 냉각용 및 발전용 열전소자 재료로 사용되고 있다. 앞선 연구에서 MA법에 의한 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt%, 0.02wt% La으로 미량 치환하여 melting법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 가압 소결하였다. 가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-La)-Te, Bi-(Te-La)의 열전특성을 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.199-199
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• 2007

Bi-Te계 화합물은 상온영역 ($250^{\circ}C$ 이하)에서 열전 특성이 우수하여, 냉각용 및 발전용 열전 소자 재료로 사용되고 있다. 앞선 연구에서 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt% Ce으로 미량 치환하여 기계적 합금화법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 진공가압 소결하였다. 진공가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-Ce)-Te, Bi-(Te-Ce)의 열전특성을 비교 분석하였다.