• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.128-132
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• 2003

무전해 Ni-P UBM과 3가지 경우의 무연 솔더간의 계면연구를 통해 Bi가 솔더의 합금원소로 들어감에 따라 계면반응에 어떠한 영향을 줄 수 있는 가를 연구했다. 3가지 다른 무연 솔더는 Bi가 각각 $0wt\%,\;4.8wt\%,\;58wt\%$들어간 Sn3.5Ag, Sn3.5Ag4.8Bi, Sn58Bi 이다. reflow를 수행한 후에 세 가지 솔더에서 나타나는 계면에서의 IMC는 $Ni_3Sn_4$로서 어떤 다른 솔더도 Bi를 함유한 IMC가 계면에선 관찰되지 않았다. 다만 SnAgBi 솔더의 경우 특이하게 솔더내에서 침상의 $Ni_3Sn_4$가 reflow후에 관찰되었다. 또한 반응속도의 척도가 되는 Ni-P UBM소모속도를 비교해 보면 reflow후의 SnAg와 SnAgBi의 경우에는 비슷하나 SnBi의 경우에는 알서 두 솔더에 비해 눈에 띠게 느림을 관찰하였다. 이러한 Ni-P UBM의 소모경향을 Bi의 함량, 그에 따른 Sn의 상대적인 함량의 관점에서 고찰하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.65-68
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• 1999

A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.98-103
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• 2002

BGA(Ball Grid Array) 패키지의 솔더볼 패드 중의 하나인 Au/Ni-Co/Cu 금속층 위에 Bi가 첨가된 Sn-3.5Ag-$\chi$Bi 솔더볼을 리플로우시켰다. 리플로우한 후 130 $^{\circ}C$에서 열처리함에 따른 계면상 및 솔더 내부의 상변화를 관찰하였다. 계면에는 (Ni,Co)$_3$Sn$_4$외에 (Au,Ni,Co,Bi)Sn$_4$가 생성되었음을 관찰할 수 있었고, 솔더 내부에는 (Au,Ni,Co,Bi)SH$_4$, Ag$_3$Sn, Bi 상이 혼재되어 있었다. Nano-indentation에 의한 경도 측정 결과, Bi 함량 증가에 따라 경도는 증가하였으나, 볼전단(Ball Shear) 테스트 결과는 Bi가 증가됨에 따라 오히려 볼전단 강도값이 감소하였다. 이는 파면 검사 결과, 파괴 경로가 주로 계면의 금속간 화합물과 솔더 사이에서 진행함에 기인한 것이다. 솔더 내부의 파괴 경로를 가진 2.5Bi가 가장 우수한 볼전단 강도값을 나타내었는데, 이는 솔더내의 Bi의 고용강화에 기인한 것으로 보인다.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.11
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• Journal of the Chungcheong Mathematical Society
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• v.29 no.3
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• pp.491-502
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• 2016

In this paper, as a generalization of symmetric bi-derivations and symmetric bi-f-derivations of a lattice, we introduce the notion of symmetric bi-(f, g)-derivations of a lattice. Also, we define the isotone symmetric bi-(f, g)-derivation and obtain some interesting results about isotone. Using the notion of $Fix_a(L)$ and KerD, we give some characterization of symmetric bi-(f, g)-derivations in a lattice.

• Kyungpook Mathematical Journal
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• v.45 no.4
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• pp.527-537
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• 2005

The intuitionistic fuzzification of the notion of a bi-ideal in ordered semigroups is considered. In terms of intuitionistic fuzzy set, conditions for an ordered semigroup to be completely regular is provided. Characterizations of intuitionistic fuzzy bi-ideals in ordered semigroups are given. Using a collection of bi-ideals with additional conditions, an intuitionistic fuzzy bi-ideal is constructed. Natural equivalence relations on the set of all intuitionistic fuzzy bi-ideals of an ordered semigroup are investigated.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.479-485
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• 2011

Pt-Bi/C catalysts supported on carbon black with various Pt/Bi ratios were synthesized by a reduction method. Chloroplatinic acid hydrate ($H_2PtCl_6{\cdot}xH_2O$) and bismuth (III) nitrate pentahydrate ($Bi(NO_3)_3{\cdot}5H_2O$) were used as precursors for Pt and Bi, respectively. Before loading metal on carbon, heat treatment and pretreatment of carbon black in an acidic solution was conducted to enhance the degree of dispersion. The physical property of the synthesized catalysts was investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The XRD pattern of untreated Pt-Bi/C catalyst showed BiPt and $Bi_2Pt$ peaks in addition to Pt peaks. These results imply that Bi atoms were incorporated into the Pt crystal lattice by Pt-Bi alloy formation. The catalytic activity for methanol oxidation was measured using cyclic voltammetry in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. The addition of proper amount of Bi was found to significantly improve catalytic activity for methanol oxidation. The catalytic activity for methanol oxidation was closely related to the stability between electrode and electrolyte. In order to investigate the stability of catalysts, chronoamperometry analysis was carried out in the same solution at 0.6 V.

• Journal of Life Science
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• v.16 no.3 s.76
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• pp.409-414
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• 2006

Molecular chaperones and folding enzymes in the endoplasmic reticulum (ER) associate with the newly synthesized proteins to prevent their aggregation and help them fold and assemble correctly. Chaperone function of BiP, which is a Hsp70 homologue in ER, is controlled by the N-terminal ATPase domain. The ATPase activity of the ATPase domain is affected by regulatory factors. BAP was identified as a nucleotide exchange factor of BiP (Grp78), which exchanges ADP with ATP in the ATPase domain of BiP This study presents whether BAP can influence folding of a protein, immunoglobulin heavy chain that is bound to BiP tightly. We first examined which nucleotide of ADP and ATP affects on BAP binding to BiP The data showed that endogenous BAP of HEK293 cells prefers ADP for binding to BiP in vitro, suggesting that BAP first releases ADP from the ATPase domain in order to exchange with ATP. Immunoglobulin heavy chain, an unfolded protein substrate, was released from BiP in the presence of BAP but not in the presence of ERdj3, which is another regulatory factor for BiP accelerating the rate of ATP hydrolysis of BiP The ADP-releasing function of BAP was, therefore, believed to be responsible for immunoglobulin heavy chain release from BiP. Grp170, another Hsp70 homologue in ER, did not co-precipited with BAP from $[^{35}S]$-metabolic labeled HEK293 lysate containing both overexpressed Grp170 and BAP. These data suggested that BAP has no specificity to Grp170 although the ATPase domains of Grp170 and BiP are homologous each other.