Deposition and Electrical Properties of Al2O3와 HfO2 Films Deposited by a New Technique of Proximity-Scan ALD (PS-ALD) (Proximity-Scan ALD (PS-ALD) 에 의한 Al2O3와 HfO2 박막증착 기술 및 박막의 전기적 특성)
-
- Korean Journal of Materials Research
- /
- v.18 no.3
- /
- pp.148-152
- /
- 2008