• Composites Research
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• v.29 no.2
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• pp.45-52
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• 2016

An understanding of the failure mechanisms of the adhesive layer is decisive in interpreting the performance of a particular adhesive joint because the delamination is one of the most common failure modes of the laminated composites such as the fiber metal laminates. The interface between different materials, which is the case between the metal and the composite layers in this study, can be loaded through a combination of fracture modes. All loads can be decomposed into peel stresses, perpendicular to the interface, and two in-plane shear stresses, leading to three basic fracture mode I, II and III. To determine the load causing the delamination growth, the energy release rate should be identified in corresponding criterion involving the critical energy release rate ($G_C$) of the material. The critical energy release rate based on these three modes will be $G_{IC}$, $G_{IIC}$ and $G_{IIIC}$. In this study, to evaluate the fracture behaviors in the fracture mode I and II of the adhesive layer in fiber metal laminates, the double cantilever beam and the end-notched flexure tests were performed using the reference adhesive joints. Furthermore, it is confirmed that the experimental results of the adhesive fracture toughness can be applied by the comparison with the finite element analysis using cohesive zone model.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.

• Physical Therapy Korea
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• v.19 no.3
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• pp.72-80
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• 2012

The purpose of the present study was to investigate the effects of familiar exercise and novel exercise on motor function after intracerebral hemorrhage (ICH) in rats. The rats were subjected to a unilateral striatal ICH via collagenase infusion. The rats were randomly divided into the following three groups: the CON (control group; rested one week post-ICH), the FE (familiar exercise group; familiar exercise was performed two weeks after one-week post-ICH period), and NE (novel exercise group; novel exercise was performed two weeks after one-week post-ICH period). We measured neurological behavior using a ladder rung walking test and a beam walking test; we measured the level of nerve growth factor (NGF) using immunohistochemistry and western blot analysis. We performed a one-way ANOVA test to analyze the scores obtained from the neurological behavior tests and the differences of NGF protein levels among the three groups. In the present study, the FE group and the NE group showed significant improvement during the neurological behavior tests and in their expression of NGF protein level, as compared to the CON group. Especially, NE group more increase than FE group in neurological behavior tests, the expression of NGF on motor cortex. In conclusion, these results suggest that, after ICH, familiar exercise and novel exercise enhance motor function and, novel exercise is more effective than familiar exercise.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Analytical Science and Technology
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• v.6 no.5
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• pp.515-520
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• 1993

By the real use of Rene 80 cast blades at high temperature ${\gamma}^{\prime}$ precipitates in the matrix(${\gamma}$) mainly due to the operating temperature. These precipitates play main role for strenthening of the blades. Generally known that dislocation density increases due to ${\gamma}-{\gamma}^{\prime}$ mismatch by the generation and growth of the precipitates, because the lattice parameter of ${\gamma}^{\prime}$ is higher than that of ${\gamma}$. These lattice parameters of ${\gamma}$ and ${\gamma}^{\prime}$ are determined through the CBED(Convergent Beam Electron Diffraction) method by STEM(Scanning Transmission Electron Microscope) in this work. And also studied, whether and how much the dislocation density increases by the generation and growth of the precipitates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.14-14
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• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Nuclear Engineering and Technology
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• v.35 no.6
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• pp.529-536
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• 2003

The objective of this study is to investigate the reorientation of hydrides with applied stress intensity factor, the peak temperature and the time when to apply the stress intensity factor in a Zr-2.5Nb pressure tube during its thermal cycle treatment. Cantilever beam (CB) specimens with a notch of 0.5 mm in depth made from the Zr-2.5Nb tube were subjected to electrolytic hydrogen charging to contain 60 ppm H and then to a thermal cycle involving heating to the peak temperature of either 310 or $380^{\circ}C$, holding there for 50 h and then cooling to the test temperature of $250^{\circ}C$. The stress intensity factor of either 6.13 or $18.4\;MPa\sqrt{m}$ was applied at the beginning of the thermal cycle, at the end of the hold at the peak temperatures and after cooling to the test temperature, respectively. The reorientation of hydrides in the Zr-2.5Nb tube was enhanced with the increased peak temperature and applied stress intensity factor. Furthermore, when the CB specimens were subjected to $18.4\;MPa\sqrt{m}$ from the beginning of the thermal cycle, the reoriented hydrides occurred almost all over the Zr-2.5Nb tube, surprisingly suppressing the growth of a DHC crack. In contrast, when the CB specimens were subjected to the stress intensity factor at the test temperature, little reorientation of hydrides was observed except the notch region, leading the Zr-2.5Nb to grow a large DHC crack. Based on the correlation between the reorientation of hydrides and the DHC crack growth, a governing factor for DHC is discussed along with the feasibility of the Kim's DHC model.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.240-248
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• 2002

$Fe_xTi_{l-x}O_2$ films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile $TiO_2$(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in $Fe_xTi_{l-x}O_2$ films were found to be +4 and a mixture of +2 and +3, respectively. More $Fe^{3+}$ species exist in higher Fe doped film of $Fe_{0.16}Ti_{0.84}O_2$. The morphology of $Fe_{0.07}Ti_{0.93}O_2$ film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand, $Fe_{0.16}Ti_{0.84}O_2$ film consists of round shaped small islands showing somewhat rougher surface compared to the surface of $Fe_{0.16}Ti_{0.84}O_2$ film.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.43-46
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• 2015

$Si(100){\backslash}200nm$ $SiO_2{\backslash}5nm$ $Ta{\backslash}5nm$ $MgO{\backslash}35nm$ $Fe_3O_4$ multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at $500^{\circ}C$ for 1 hour under the high vacuum of ${\sim}1{\times}10^{-6}Torr$, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of $Fe_3O_4$ thin films prepared under different growth and annealing conditions.