• Journal of Welding and Joining
• /
• v.21 no.4
• /
• pp.63-68
• /
• 2003

Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

• Journal of Biomedical Engineering Research
• /
• v.24 no.2
• /
• pp.83-89
• /
• 2003

The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.

• Journal of the Korean Society for Heat Treatment
• /
• v.14 no.5
• /
• pp.292-296
• /
• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.265-265
• /
• 2013

We have investigated the influences of dangling bonds generated by alpha particle irradiation on friction and adhesion properties of graphene. Single layer of graphene grown with chemical vapor deposition on copper foil was irradiated by the alpha beam with the average energy of 3.04 MeV and the irradiation dosing between $1{\times}10^{14}$ and $1{\times}10^{15}$/$cm^3$. Raman spectroscopic showed that the ${\pi}$ electron states below Fermi level arises and the $I_D$/$I_G$ increases as increasing the dosing of alpha particle irradiation. The core level X-ray photoelectron (XPS) revealed that these defects represent the creation of various carbon-related defects and dangling bond. The nanoscale tribological properties were investigated with atomic force microscopy in ultrahigh vacuum. The friction appeared to increase remarkably as increasing the amount of dosing, indicating that the dangling bonds on graphene layers enhances the energy dissipations in friction. This trend can be explained by the additional channel of energy dissipation by dangling bond or O- and H- terminated clusters created by alpha particle irradiation.

• The Korean Journal of Nuclear Medicine Technology
• /
• v.16 no.2
• /
• pp.106-109
• /
• 2012

Purpose : The KOTRON-13 cyclotron was developed and installed in regional cyclotron centers to produce short-lifetime medical radioisotopes. However, this cyclotron has limited capacity to produce $^{11}C$ so far. In present study, we developed an effective $^{11}C$ target system combining with fluorine-18 target and applied to the production of various $^{11}C$ radiopharmaceuticals. Materials and Methods : To develop the optimal $^{11}C$ target system and effective its cooling system, we designed the $^{11}C$ target system by Stopping and Range of Ions in Matter (SRIM) simulation program and considered the cavity pressure during irradiation at target grid. In this investigation, we modified target materials, cavity shapes and the position of cooling system in $^{11}C$ target and then evaluated $[^{11}C]CO_2$ production at different beam currents, thickness of the target foil, oxygen content of nitrogen gas and target gas loading pressure. Also, we evaluate the production of several $^{11}C$ radiopharmaceuticals such as [$^{11}C$]PIB, [$^{11}C$]DASB, and [$^{11}C$]Clozapine. Results : $[^{11}C]CO_2$ was produced about 74 GBq for 30min irradiation at 60 ${\mu}A$ of beam current as following conditions: thickness of the target foil: 19 nm HAVAR, oxygen content of nitrogen: under 50 ppb, target gas loading pressure: 24 bar. Additionally, the cooling system was stable to produce $[^{11}C]CO_2$ at high beam current. The radiochemical yields of [$^{11}C$]PIB, [$^{11}C$]DASB, and [$^{11}C$]Clozapine showed about 26-38% with over 127 GBq/umol of specific activity. Conclusion : The carbon-11 target system in the KOTRON-13 cyclotron was successfully developed and showed stable production of $[^{11}C]CO_2$. These results showed that our $^{11}C$ target system will be compatible with other commercial system for the routine $^{11}C$ radiopharmaceuticals production in the KOTRON-13 cyclotron.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.194-202
• /
• 1996

Transmission electron microscopy has been used to characterize the dislocation structure in hot-pressed titanium diboride. The thin foil samples were prepared by the conventional ion beam thinning technique and reveal the main features associated with the dislocations ; low-angle grain boundaries with dislocation arrays, high-angle grain boundaries with ledges/steps on the boundary planes. The ledges/steps on the grain boundaries were characterized as the origin of defect structures such as dislocation formation or crack propagation near grain boundaries. A fraction of the high angle grain boundaries contained periodic arrays of grain boundary dislocations. The Burger's vectors of the dislocations in the $TiB_{2}$specimens were determined.

• Laser Solutions
• /
• v.18 no.1
• /
• pp.1-6
• /
• 2015

High welding speed and narrow weld seam are favorable for welding of magnesium alloy. Magnesium alloy is recommended for the smart frame because it has several advantages such as low density, high thermal conductivity, EMI shielding capability and good cast ability. This study is for the assembly welding of the magnesium smart frame with high productivity, good performance and low cost. The window for battery on AZ91D frame produced by die-casting was prepared by CNC machining. Corresponding AZ31 blank of 0.2mm thickness was prepared by die-blanking cut. All system set was fixed at the stationary bed but the laser beam was manipulated by scanner up-to 1,000mm/s speed. The weld joint between AZ31 sheet and AZ91D frame was welded by fiber laser on 850~1,000W output power. The joint showed penetration enough but some humping bead. The distortion by the weld heat was almost free because of the quick dissipation of the heat by small beam size and fast welding. Consequently, the thinner magnesium foil was assembled successfully to the magnesium frame of mobile phone.

• Journal of the Korean Vacuum Society
• /
• v.15 no.1
• /
• pp.97-102
• /
• 2006

Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.4
• /
• pp.32-38
• /
• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.4
• /
• pp.143-147
• /
• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.