• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.184.1-184.1
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• 2015

RF magnetron sputtering법을 이용하여 IGZO박막을 RF power 100W로 일정하게 유지시켜, 열처리 변화에 따른 구조적, 전기적, 광학적 특성 분석을 연구하였다. IGZO 타겟은 $In_2$ $O_3$, $Ga_2$ $O_3$, ZnO 분말을 각각 1:1:2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였고, $20mm{\times}20mm$ XG glass 기판위에 IGZO박막을 증착하였다. sputtering의 조건은 base pressure $2.0{\times}$10^-6Torr, working pressure $2.0{\times}$10^-2Torr, RF power 100 W, 증착온도는 실온으로 고정, 증착된 박막은 Annealing장비로 $500^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$로 열처리를 하였다. XRD 분석 결과 열처리 $700^{\circ}C$부터 2theta=31.4도에서 peak intensity가 증가하며 결정화가 진행되는 것을 확인하였다. AFM분석 결과 열처리 $700^{\circ}C$에서 최소 0.31 Roughness를 갖는 것을 확인하였고, Hall 측정 결과 열처리 $700^{\circ}C$에서 carrier concentration $4.91{\times}$10^19cm^-3, Mobility 14.4cm^2/V-s, Resistivity $8.7{\times}$10^-5${\Omega}-cm$로 확인하였으며, UV-Visible-NIR을 이용하여 열처리 한 모든 IGZO박막은 가시광선 영역에서 평균 85%이상의 광 투과성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.201-202
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• 2009

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Journal of Magnetics
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• v.19 no.4
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• pp.327-332
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• 2014

The effect of minor element additions (Ca, Al) on microstructural change and magnetic properties of Fe-Nb-Cu-Si-B alloy has been investigated, in this paper. The Fe-Si-B-Nb-Cu(-Ca-Al) alloys were prepared by arc melting in argon gas atmosphere. The alloy ribbons were fabricated by melt-spinning, and heat-treated under a nitrogen atmosphere at $520-570^{\circ}C$ for 1 h. The soft magnetic properties of the ribbon core were analyzed using the AC B-H meter. A differential scanning calorimetry (DSC) was used to examine the crystallization behavior of the amorphous alloy ribbon. The microstructure was observed by X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM). The addition of Ca increased the electrical resistivity to reduce the eddy current loss. And the addition of Al decreased the intrinsic magnetocrystalline anisotropy $K_1$ resulting in the increased permeability. The reduction in the size of the ${\alpha}$-Fe precipitates was observed in the alloys containing of Ca and Al. Based on the results, it can be concluded that the additions of Ca and Al notably improved the soft magnetic properties such as permeability, coercivity and core loss in the Fe-Nb-Cu-Si-B base nanocrystalline alloys.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.153-156
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• 2005

Nondestructive sensing of electrospun PYDF web and multi-wall carbon nanotube (MWCNT)/epoxy composites were investigated using electro-micromechanical technique. Electrospinning is a technique used to produce micron to submicron diameter polymeric fibers. Electrospun PVDF web was also evaluated for the sensing properties by micromechanical test and by measurement electrical resistance. CNT composite was especially prepared for high volume contents, 50 vol% of reinforcement. Electrical contact resistivity on humidity sensing was a good indicator for monitoring as for multifunctional applications. Work of adhesion using contact angle measurement was studied to correlate acid-base surface energy between carbon fiber and CNF composites, and will study furher for interfacial adhesion force by micromechanical test.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.117-121
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• 2010

Silicon quantum dots base on photoluminescent porous silicon were prepared from an electrochemical etching of n-type silicon wafer (boron-dopped<100> orientation, resistivity of 1~10 ${\Omega}-cm$) and used as a alcohol sensor. Silicon quantum dots displayed an emission band at the wavelength of 675 nm with an excitation wavelength of 480 nm. Photoluminescence of silicon quantum dots was quenched in the presence of alcohol vapors such as methanol, ethanol, and isopropanol. Quenching efficiencies of 21.5, 32.5, and 45.8% were obtained for isopropanol, ethanol, and methanol, respectively. A linear relationship was obtained between quenching efficiencies and vapor pressure of analytes used. Quenching photoluminescence was recovered upon introducing of fresh air after the detection of alcohol. This provides easy fabrication of alcohol sensor based on porous silicon.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2522-2525
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• 2001

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made bymicro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Journal of Electrical Engineering and Technology
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• v.13 no.3
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• pp.1337-1345
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• 2018

The reliability of power transmission and distribution depends up on the consistency of insulation in the high voltage power transformer. In recent times, considering the drawbacks of conventional mineral oils such as poor biodegradability and poor fire safety level, several research works are being carried out on natural ester based nanofluids. Earlier research works show that sunflower oil has similar dielectric characteristics compared with mineral oil. BIOTEMP oil which is now commercially available in the market for transformers is based on sunflower oil. Addition of nanofillers in the base oil improves the dielectric characteristics of liquid insulation. Only few results are available in the literature about the insulation characteristics of nano modified natural esters. Hence understanding the influence of addition of nanofillers in the dielectric properties of sunflower oil and collecting the database is important. Considering these facts, present work contributes to investigate the important characteristics such as partial discharge, lightning impulse, breakdown strength, tandelta, volume resistivity, viscosity and thermal characteristics of $SiO_2$ nano modified sunflower oil with different wt% concentration of nano filler material varied from 0.01wt% to 0.1wt%. From the obtained results, nano modified sunflower oil shows better performance than virgin sunflower oil and hence it may be a suitable candidate for power transformer applications.

• Journal of the Korean Geophysical Society
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• v.9 no.3
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• pp.273-286
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• 2006

The Kyongsang Basin is the most representative Cretaceous basin in the Korean Peninsula where extensive crustal deformation and non-marine sedimentation took place in the early Cretaceous period. The lithology of the basement of the basin and adjacent areas is comprised of mainly Precambrian gneiss complex and Mesozoic granite intrusions. We have carried out magnetotelluric (MT) surveys to investigate the deep geoelectric structure around the Kyongsang Basin. The MT data were collected in the frequency range from 0.00042 to 320 Hz at 24 sites along a profile across the northern part of Kyongsang Basin. The results of MT inversion show that the thickness of sediments is estimated about 3 km to 9 km and the depth to base of granite intrusion is about 20 km. A remarkable discovery in this study is the highly conductive layer beneath the basin, having the resistivity of 1 ohm-m to 30 ohm-m and the thickness of about 3 km to 4 km or more. Although we are not able to reveal the nature of this layer, the result of this study could provide some basic information with respect to the formation process and deposit environment of the proto-Kyongsang Basin.