• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.702-705
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• 2011

Poly-Si wafers with resistivity of 1 [${\Omega}$-cm[ and thickness of 50 [${\mu}m$] were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 [cm/sec], minority carrier diffusion length in the base region 50 [${\mu}m$], front surface recombination velocity 100 [cm/sec], sheet resistivity of emitter layer 100 [${\Omega}/{\Box}$], BSF thickness 0.5 [${\mu}m$], doping concentration $5{\times}10^{19}\;cm^{-3}$. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19.8 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.215-222
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• 2001

Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.310-313
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• 2000

Polyaniline Emeraldine Base (PANI EB) polymerized by chemical oxidative polymerization was doped with Camphorsulfonic Acid(CSA). Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) solutions were solved in organic solvents and sonificated at the room temperature for different solvents in PANI-CSA ES solution and sonification time. PANI-CSA ES solutions was coated on PET films using bar coater. 1-Step oxidatively-polymerized Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was solved in m-cresol:chloroform 1:1 co-solvents and their solution was bar-coated on PET film. The surface resistivities of these coated films were measured, The surface resistivity of PANI-CSA ES solution in m-cresol:chloroform 1:1 co-solvent system was 5${\times}$10$^2$$\Omega$/$\square$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.591-593
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• 2003

Silicone composites for high voltage insulator(HVI SC) were prepared by adding aluminum trihydrate(ATH) treated by surface treatment agent to base silicone compound at the ratio of 100:20, 100:40, 100:60, 100:80, and 100:100, respectively. And also, ATH was treated by various surface treatment agents, such as stearic acid, acryl silane vinyl silane under compounding process. electrical properties were investigated for the various contents of ATH and solace-treatment agents we mlas ured volume resistivity, breakdown and tracking resistance were for HVISC containing ATH treated by viuyl silane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Carbon letters
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• v.8 no.2
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• pp.115-119
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• 2007

Properties of carbon blacks and carbon black/SBR rubber composites filled by surface modified carbon blacks were examined. Although the specific surface area of carbon blacks increased after the surface modifications with heat, acid, and base, there were no obvious changes in resistivity. The composites filled by heat treated carbon blacks showed a higher tensile strength and elongation than those filled by raw blacks. The acid and base treated carbon blacks filled composites also showed higher tensile strength but similar elongation values with those filled by raw blacks. With increasing loading ratio, both tensile strength and elongation increased, and appeared a maximum value at 30-40 phr. Modulus at 300% strain remained increasing with further loading of carbon blacks. At the same loading, the heat treated black filled composites showed similar modulus values with composites filled by raw blacks but for base and acid treated black filled composites much higher values were obtained. After the surface modification, the functional groups which played an important role in reinforcement action were changed.

• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.8-12
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• 2010

The properties of the conductor.mechanical, thermal, and electrical-are the key information in the design and optimization of superconducting coils. Particularly, in devices using second generation (2G) high temperature superconductors (HTS), whose base materials (for example, the substrate or stabilizer) and dimensions are adjustable, a design process for conductor optimization is one of the most important factors to enhance the electrical and thermal performance of the superconducting system while reducing the cost of the conductor. Recently, we developed a numerical program that can be used for 2G HTS conductor optimization. Focusing on the five major properties, viz. the electrical resistivity, heat capacity, thermal conductivity, Z-value, and enthalpy, the program includes an electronic database of the major base materials and calculates the equivalent properties of the 2G HTS conductors using the dimensions of the base materials as the input values. In this study, the developed program is introduced and its validity is verified by comparing the experimental and simulated results obtained with several 2G HTS conductors.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.388-394
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• 2008

For purpose of anti-static film remaining unchanged in the condition of $160^{\circ}C$, organic solvent, acid and base solution $0.01\sim0.03{\mu}m$ particles of Sb doped tin oxide(ATO) were grafted by 3-Glycidyloxypropyltrimethoxysilane(GPTS) for improving interfere bonding force between ATO and epoxy resin. The particles were dispersed in 2-methoxyethanol with YD-I28(Bisphenol A type epoxy resin, Kukdo chemical) and 1-imidazole as hardener. The anti-static solutions were coated on PI film as thickness of $0.1{\mu}m$. Surface resistivity of anti-static film containing conductive polymer became $10^{12}\Omega/\Box$ after 32 hours in $160^{\circ}C$. The surface resistivity of ATO grafted by GPTS / Epoxy coating layer remained as $10^{7.6}\Omega/\Box$ in $160^{\circ}C$ for 7 days. ATO grafted by GPTS / Epoxy coating layer coated on PI film was dipped in acetone for 7 days. The surface resistivity remained unchanged as $10^{7.6}\Omega/\Box$. The anti-static layer dipped in water solutions containing each KOH 10 wt % and $H_2SO_4$ 2 wt% was ultra-sonicated for 10 minutes per once until 30th. The surface resistance of anti-static layer containing ATO grafted by GPTS remained unchanged.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.103-113
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• 1991

Electroless Ni-Cu-P alloy plating of Al base hard disk was performed to investigate some properties according to the change of composition. It was found that the composition of Ni and Cu in deposits changed linearly with increasing the mole ratio of NiSO4.6H2O/CuSO4.5H2O. The increase in hardness by heat - treatment was confirmed to be associated with small size grained crystallization of the amorphous deposits. Acid resistance of all deposits layer. which had been heated up to 30$0^{\circ}C$, was found to be exellent when immersed in 1N-H2SO4 solution, and it showed more superior acid resistance with decreasing Cu content and with increasing P. The resistivity of the deposits heat treated became smaller at temperature more than 50$0^{\circ}C$, and it became largerly with increasing P content. Cu 44.1wt% alloy(C bath) showed the most superior non-magnetically stable characteristics after heat treatment. It was superiorly with higher temperature and with decreasing P content.