• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.231-235
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• 2004

High performance 42 inch XGA PDP with high luminance of 1,000 cd/$m^2$ has been developed using high efficient electrode structure, discharge gas and closed barrier ribs. For high speed addressing with single scan technique, address discharge time lag was reduced over 40% with FAST driving scheme and new materials. High dark room contrast ratio of 5,000 : 1 was achieved and picture quality was improved using new algorithm for eliminating false contour and improving gray level linearity.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.13-16
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• 2003

Adhesion of $SrZrO_3$ resistive oxide barrier on Ag sheathed Bi(2223) tapes prepared by the sol-gel and dip-coating method was evaluated with an aid of Taguchi method and Lie($2^1{\times}3^7$) orthogonal arrays to determine the optimal process combination of levels of factors that best satisfy the bigger is better quality characteristic (QC=B). For analyses of results statistical calculations such as average and analysis of variance (ANOVA) were employed to analyze the results for improving the performance qualities of the dip-coated $SrZrO_3$ film. Experimentally, the performance of the films was evaluated in terms of bond strength by varying Sr/Zr moi ratio (A), amount of organic vehicle additives (B), drying temperature (C) and time (D), heat treatment temperature (E) and time (F), respectively. The optimal combination of levels of factors was determined to be $A_3B_2C_3D_2E_1F_3$ having a 90% confidence level.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09a
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• pp.1264-1273
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• 2010

Soil-bentonite cutoff walls are widely recognized to be the effective barrier for containment of wastes and groundwater. Bentonite cake is usually found remaining on the trench surface due to the use of bentonite slurry during the excavation for the cutoff wall construction. Defects also inevitably take place due to the inappropriate construction procedures or improperly mixed soil-bentonite backfill. The defects include insufficient keys and windows in the soilbentonite cutoff wall. In this study, the performance of the soil-bentonite cutoff wall is evaluated based on the flow rates through the wall. Three-dimensional numerical models were applied to simulate the groundwater flow through the soil-bentonite cutoff walls of typical geometries with consideration of the defects and bentonite cake. Results of the simulations showed that the bentonite cake has no effect in the insufficient key cases. In the keyed wall cases, the bentonite cake with very low hydraulic conductivity significantly impedes the flow of groundwater through the wall. The presence of the bentonite cake not only compromises the window defect but also renders the wall construction more effective in blocking the groundwater flow. These findings show the significance of the bentonite cake in a soil-bentonite cutoff wall construction.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.12
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• pp.1117-1124
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• 2013

As the recently soaring wireless traffic, small-cell techniques have been actively studied in order to support such a wireless demand for cellular wireless networks. This paper focuses on the inter-cell interference neutralization to resolve the main barrier for implementing small-cell cellular networks. Assuming that each message is delivered to the final destination by the help of base stations or relays, ergodic interference neutralization is proposed, which exploits the time-varying nature of wireless channels. The previous approach based on amplify-and-forward (AF) suffers from severe performance degradation in the low signal-to-noise (SNR) regime due to noise amplification. On the other hand, the proposed interference neutralization based on recently developed compute-and-forward (CF) fixes such a problem and improves the performance in the low SNR regime.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.832-834
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• 1992

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.17 no.5 s.122
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• pp.373-378
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• 2007

Today, the use of the sound absorptive material is increasing to improve the room acoustics in the auditorium and music hall, etc. Usually, the sound absorption materials have been used to enhance the performance of a noise barrier and improve the room acoustics in construction site. Generally, the sound absorbtion coefficients are the most important factor reflecting the sound absorbtion performance. There are two methods to measure the sound absorption coefficient. The first one is the reverberation room method, and the second is the impedance tube method. In this study, we measure the sound absorbtion coefficients using these two methods, and then we compared the results of the sound absorbtion coefficients to look into the difference of results between reverberation room method and impedance tube method. Also we compared the results of the sound absorbtion coefficients with respect to the size of sample and the volume of reverberation room. From the experiment, we could see that the sound absorbtion coefficients are measured equally for different sample size. But the sound absorbtion coefficients are measured differently according to test methods and test conditions.

• Transactions of the Korean Society of Automotive Engineers
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• v.18 no.6
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• pp.31-37
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• 2010

In proportion to increasing interest in vehicle safety, many country have regulated vehicle safety and performed NCAP(New Car Assessment Program). However vehicles which had good results in these compliance and NCAP frontal crash test have caused problems such as the fork effect and over-riding in real car-to-car accidents. To complement these issues, new frontal crash test modes using new barrier like FWDB and PDB have been developed by EEVC WG15. In this paper, FWDB frontal crash test was performed and the result was compared with the full frontal crash test using the rigid wall in order to comprehend the characteristic of FWDB. The results of FWDB test were compared with one of USNCAP and KNCAP. Using USNCAP data, vehicle performance like deformation and wall force were studied. A comparative study of dummy injuries was made by using KNCAP result. The results showed that vehicle performance of FWDB test like displacement and effective acceleration was similar in spite of absorbing energy of FWDB due to the greater vehicle deformation of rigid wall test. In FWDB test, driver dummy head bottomed out but most of injuries were superior to the injury of rigid wall test.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.4
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• pp.67-72
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• 2004

A regenerative cooling system has been designed through empirical 1-D analysis for a liquid rocket engine of 30-ton-level thrust. The hot-gas-side wall temperature from 1-D analysis shows 100K difference compared to 3D CFD analysis. Two variations of design with same cooling performance are suggested for different maximum channel widths i.e., 4mm and 2mm. The coolant pressure drop of the latter design is higher by 20%. The maximum liner temperature is about 700K when TBC and the thermal resistance of carbon deposit are considered. So film cooling is recommended to increase the cooling capacity as the present cooling capacity is insufficient