• Title/Summary/Keyword: barrier function

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Emodin Studies on Anti-inflammatory and Skin Barrier Improvement Activities (Emodin의 항염 및 피부장벽개선 활성 연구)

  • Kim, Se-Gie;Choi, Jae Gurn;Jang, Young-Ah
    • Journal of the Korean Applied Science and Technology
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    • v.38 no.6
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    • pp.1383-1392
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    • 2021
  • It has been reported that emodin, a major pharmacologically active ingredient of herbal medicines such as Polygonum cuspidatum, Polygonum multiflorum, Rheum palmatum, and Aloe vera, is effective in antioxidant, antibacterial, anti-inflammatory, anticancer, and liver protection. In this study, to investigate the potential of emodin to be used as a skin disease and functional material, the activity related to the improvement of inflammation and skin barrier function was confirmed. To observe the anti-inflammatory effect on HaCaT cells, which are human keratinocytes, cytokine inhibition was confirmed by ELISA kit and protein expression by western blot. In HaCaT cells activated with TNF-α (10 ng/mL)/IFN-γ (10 ng/mL), emodin was treated with each concentration (5, 10, 20, 40) µM. As a result, It was confirmed that the production amount of TNF-α, IL-1β and IL-6 decreased as the concentration of emodin increased. In the experimental results on the expression levels of inflammation-related proteins iNOS and COX-2, it was confirmed that 48% of iNOS and 29% of COX-2 were inhibited compared to control at a concentration of 20 µM of emodin. As an indicator of skin barrier function improvement, the mRNA expression level of filaggrin, involucrin, and loricirn and the production amount of filaggrin, involucrin, and loricirn were confirmed. and excellent results were obtained with an emodin concentration-dependent increase. In particular, filaggrin, which was produced twice as much as the control at a concentration of 20 µM, is a protein involved in the formation of NMF, a natural moisturizing factor, and is known to play an important role in moisturizing the stratum corneum. In conclusion, it was confirmed that emodin can be used as a material for improving inflammation and improving skin barrier function, which is part of the potential for use as a skin disease and functional material. It is believed that if additional research is performed in the future, the scope of its application can be further expanded.

Change of Schottky barrier height in Er-silicide/p-silicon junction (어븀-실리사이드/p-형 실리콘 접합에서 쇼트키 장벽 높이 변화)

  • Lee, Sol;Jeon, Seung-Ho;Ko, Chang-Hun;Han, Moon-Sup;Jang, Moon-Gyu;Lee, Seong-Jae;Park, Kyoung-Wan
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.197-204
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    • 2007
  • Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

Schottky Contact Application을 위한 Yb Germanides 형성 및 특성에 관한 연구

  • Na, Se-Gwon;Gang, Jun-Gu;Choe, Ju-Yun;Lee, Seok-Hui;Kim, Hyeong-Seop;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.399-399
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    • 2013
  • Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

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Beneficial Effect of a Collagen Peptide Supplement on the Epidermal Skin Barrier (콜라겐 펩타이드의 피부 장벽 보호 효과)

  • Kim, Jeong-Kee;Lee, Ji-Hae;Bae, Il-Hong;Seo, Dae-Bang;Lee, Sang-Jun
    • Korean Journal of Food Science and Technology
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    • v.43 no.4
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    • pp.458-463
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    • 2011
  • Recent studies have revealed that collagen peptide (CP) plays a protective role in skin by improving the activity of antioxidants and acts as an inducer of skin regeneration by positive feedback. In this study, we focused on the beneficial effect of reinforcing the CP skin barrier. To evaluate the skin barrier, hairless mice were exposed to UVB irradiation and acetone-treatment, with or without oral administration of CP. The effects on skin appearance, trans-epidermal water loss, epidermal thickness, and cytokine content were measured using bioengineering and histochemical methods. In the CP treated group, the skin had better appearance and less damage than that of the control. Furthermore, in HaCaT cells, the amount of serinepalmytoyl transferase (SPT) mRNA increased by about 1.6-fold after treatment (CP, 100 mg/L), reflecting that CP can induce SPT expression and reinforce the recovery of skin barrier function. These results suggest that CP is not only an anti-wrinkling agent but also a potent candidate as an epidermal moisturizer.

Adhesion and Diffusion Barrier Properties of $TaN_x$ Films between Cu and $SiO_2$ (Cu 박막과 $SiO_2$ 절연막사이의 $TaN_x$ 박막의 접착 및 확산방지 특성)

  • Kim, Yong-Chul;Lee, Do-Seon;Lee, Won-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.19-24
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    • 2009
  • Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

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The Effect of Jeju Wild Ginseng Extracts on Skin Barrier via Serine-Palmitoyltransferase (제주산양산삼이 세린-팔미토일 전이효소(Serine-Palmitoyltransferase)를 통해 피부 장벽에 미치는 효과에 대한 연구)

  • Kim, Hyo Min;Lee, Jung No;Kim, Jae Moon;Kim, Sung Kyu;Park, Sung-Min
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.42 no.2
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    • pp.119-126
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    • 2016
  • Skin is the largest organ that protects the body from the external environmental factors such as smog, cigarette smoke, UV. Protective skin barrier is composed with keratinizational keratinocytes and intercellular lipids such as ceramides, cholesterols and fatty acids combined by the lamellar liquid crystal structure. In this research, we confirmed that the Jeju wild ginseng (JWG) extracts dose-dependently increased the expression of serine-palmitoyltransferase (SPT) protein which is associated with ceramide biosynthesis. In addition, emulsion containing 5% JWG extract was applied on skin of human volunteers for 2 weeks and then significantly reduced transepidermal water loss (TEWL) compared to that of control group. As a results, JWG extract increased the biosynthesis of ceramides that is the key components of the skin lipid through enhancing expression of SPT. In addition, JWG extract reduced TEWL resulting in improvement of skin barrier function. In this context, we suggest that JWG extract could be used as a skin barrier enhancer and moisturing agents in cosmetic fileds.

Determination of the Depletion Depth of the Deep Depletion Charge-Coupled Devices

  • Kim Man-Ho
    • Journal of Electrical Engineering and Technology
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    • v.1 no.2
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    • pp.233-236
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    • 2006
  • A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $(1.5k\Omega-cm)\;65{\mu}m$ thick epi-layer, on a $550{\mu}m$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

  • Charmi, Morteza
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.270-274
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    • 2016
  • This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

The effect of interfacial layer thickness on the interface dipole energy in $O_2$ plasma treated metal/organic interface

  • Kim, Soo-Young;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.115-117
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    • 2009
  • Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

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Exciton Binding Energies in GaAs-Al\ulcornerGa\ulcornerAs and In\ulcornerGa\ulcornerAs-Inp Quantum Well Structures

  • Lee, Jong-Chul
    • Journal of Electrical Engineering and information Science
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    • v.2 no.6
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    • pp.106-110
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    • 1997
  • The binding energies of the ground state of both the heavy-hole and light-hole excitons in a GaAs(In\ulcornerGa\ulcornerAs) quantum well sandwiched between two semi-infinite Al\ulcornerGa\ulcornerAs(InP) layers are calculated as a function of well width in the presence of an arbitray magnetic field. A variational approach is followed using very simple trial wave function. The applied magnetic field is assumed to be parallel to the axis of growth and the binding energies are calculated for a finite value of the height of the potential barrier. The exciton binding energies for a given value of the magnetic field are found to be increased than their values in a zero magnetic field due to the compression of their wave functions within the well with the applied magnetic field.

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