• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.141-144
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• 2011

We report the synthesis of $SrTiO_3$, $BaTiO_3$ and $Ba_xSr_{1-x}TiO_3$ (BST) nanoparticles (NPs) in various compositions (x = 0.25, 0.5 and 0.75) by an inorganic sol-gel method under a basic condition. Highly crystalline nanoparticles were formed at the reaction temperature of 25 - $100^{\circ}C$ from a stabilized titanium alkoxide in tetramethylammonium hydroxide (TMAH) and barium or strontium acetate in aqueous solution. Morphology and particle structure of the synthesized BST NPs were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The BST nanoparticles in various compositions were monodispersed without mutual aggregation, and their average sizes were in the range of 70 - 80 nm. Furthermore, they showed highly crystallized perovskite phase over the whole composition range from $SrTiO_3$ to $BaTiO_3$. We also proposed a mechanism for the low-temperature formation of BST NPs.

• Analytical Science and Technology
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• v.12 no.5
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• pp.382-386
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• 1999

Spherical particles of barium titanyl oxalate(BTO) were homogeneously precipitated by thermal decomposition of dimethyl oxalate in hydrochloric mixture solutions of water and ethanol. The experimental parameters such as composition of the mixture solvents. the eoncentration of hydrochloric acid and reaction temperature had the paramount effect on the size of panicles collected from the bottom of the reaction vessel at the aging time of 120 min and the composition of BTO. Stoichiometric BTO powders were obtained under certain conditions as relatively low alcohol content in the mixtures, high chloride concentration and high temperature, Monosized, submicrometer, but titanium excess particles were obtained under certain reverse conditions.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1879-1881
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• 1999

(Ba,Sr)$TiO_3$[BST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering. We investigated the effects of substrate temperature on the structural and dielectric properties of BST thin films. Increasing the substrate temperature, barium multi titanate phases were decreased, and BST (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the BST thin films at the substrate temperature of $500^{\circ}C$ were 300 and 0.018, respectively at l[kHz]. In all films, the dielectric constants decreased. Dielectric losses increased as increasing the frequency. The switching voltage was 5V of the BST thin films at the substrate temperature of $500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.182-182
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• 2009

The effect of Re-oxidation on the PTCR properties of Sm-doped barium titanate ceramics was investigated by means of impedance spectroscopy. Electrical properties such as resistance vs. temperature, I-V curve were measured and microstructure was observed with SEM photography. Sample was fabricated with thick film process such as tape casting of green sheet, screen printing of electrode pattern, stacking, firing in reduced atmosphere and re-oxidation, etc. As the temperature of re-oxidation increases, resistance jump as a function of temperature enhances but resistance at room temperature increases. These behavior of resistance as a function of temperature, dependent on the re-oxidation condition, is analyzed with Cole-Cole impedance plot and is shown to be related with the degree of oxidation of grain boundary regardless of grain core during re-oxidation process of sample.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.316-320
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• 1982

The effect of the additive on dielectric properties of $BaTiO_3$ containing 0.030 mol% $Dy_2O_3$ was investigated function of frequency from 5$\times$104 to 0.3$\times$107cps and temperature from 25 to 1$25^{\circ}C$. The dielectric constant increased with increasing $Dy_2O_3$ concentration from 0 to 0.05mol% due to space charge polarization. However, the dielectric constant decreased for further increase of $Dy_2O_3$ concentration due to density increase. The dielectric constant exhibits rapid change at the Curie temperature and the Curie temperature drops from 122 to 116$^{\circ}C$ with increasing amount of $Dy_2O_3$ concentration.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.238-241
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• 1996

New porous BaTiO$_3$ thermistors were fabricated using graphite powders (0 to 10 wt. %) and their porosities were in the range of 9.1% to 16.2%. As results of impedance analysis, it was confirmed that the pores affected the grain-boundary resistance and the bulk (grain interior) resistance was constant as about 25 $\Omega$ at room temperature. The magnitude of PTCR effect $(p_{max}/p)$ markedly increased from 3 orders to 7 orders without addition of any acceptor dopant such as Mn or Cr.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.251-256
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• 1987

The degradation of barium titanate ceramics was studied under the high AC electric field. At 150$^{\circ}C$, life time was measured as a function of grain size, controlled by varying sintering time at 1375$^{\circ}C$ and electrical properties, such as AC conductivity, capacitance and dissipation factor, were measured during degradation process. The life time decreased as grain size increased in the range of 2.44-8.23$\mu\textrm{m}$. The AC conductivity was remained constant and increased suddenly at the last stage of degradation process. The capacitance was slowly decreased and the dissipation factor was slowly increased as the degradaton progressed.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.349-356
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• 1988

The PTCR characteristics of (Ba0.8Pb0.2)TiO3 ceramics prepared by the molten salt sysnthesis (MSS) method have been investigated as a function of the amount of Nb2O5 dopant and KCl flux. When the weight ratio of KCl to raw material is 0.8, the resistivity at room temperature decreases with increasing amount of Nb dopant up to 0.6 atom%. It can be explained by compensation for electrons due to Nb+5 ion and holes due to K+ ion. The resistivity of (Ba0.8Pb0.2)(Ti0.994Nb0.006)O3 ceramics at room temperature decreases with increasing the ratio of KCl to raw material up to 0.6, and then increases. These results can be explained by the effect of K+ ion.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.613-616
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• 2002

The polarization properties of $BaTiO_3$ were investigated by using thermally stimulated depolarization current (TSDC) technique. Two peaks were observed at about 400 K (peak A) and 435 K (peak B) from TSDC spectra obtained from the temperature range of 280-500 K. Peak A shows a sharp decrease of TSDC due to extinction of spontaneous polarization above the phase transition temperature of $BaTiO_3$. The values of activation energy of peak A and peak B were calculated to be 0.70 eV and 0.87 eV respectively. From the results of TSDC measurement with a variation of polarizing electric field strength, we found that saturation of total current of TSDC was started from 3kV/cm. However, the amount of total current of TSDC was not affected by the variation of polarizing time.