• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.317-328
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• 2017

This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.294-300
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• 2017

$TeO_x$ thin films were deposited at various $O_2$/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from $TeO_2$ and Te targets. X-ray diffraction (XRD) results revealed that the $TeO_x$ thin films were amorphous. The structure and chemical composition of the $TeO_x$ thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the $TeO_x$ thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the $O_2$/Ar gas-flow ratios, the atomic composition ratio of $TeO_x$ thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing $O_2$/Ar gas-flow ratio, the refractive index of the $TeO_x$ thin films decreased and the optical bandgap of the films increased.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.486-492
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• 2020

The method for preparing a perovskite-type bismuth ferrite (BFO) photocatalyst which reacts to visible LED light and the characteristics of visible light photocatalysis were investigated. BFO was prepared according to the sol-gel method. The prepared BFO consisted mainly of BiFeO₃ structure and formed a nano-sized crystal including Bi₂₄Fe₂O₃₉ structure. The BFO nano crystallines were identified from the UV-visible diffuse reflectance spectra to absorb UV and visible light up to about 600 nm. The bandgap of the BFO determined from the diffuse reflectance spectrum was about 2.2 eV. Formaldehyde was decomposed by the photoreaction of BFO photocatalysts with the visible light LED lamps with wavelengths of 585 nm and 613 nm. The narrow bandgap of BFO led to elicit BFO photocatalytic activity in visible LED light.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.1
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• pp.115-119
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• 2008

In this paper, the linearity of Doherty power amplifier has been improved by applying a new Photonic Bandgap(PBG) structure on the output of amplifier. The reposed spiral PBG structure is a two-dimensional(2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure has more broad stopband and high suppression performance than the conventional three cell PBG. Also, It has a sharp skirt property. We obtained the 3rd-order intermodulation distortion(IMD3) of -33dBc for CDMA applications with that of maintaining the constant power added efficiency(PAE), the IMD3 performance is improved as much as -8 dB compared with a Doherty power amplifier without PBG structure. Moreover, the physical length of PBG is shortened, therefore the whole amplifier circuit size is considerably reduced.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.79-91
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• 1998

Design principles for high-brightness ligh-temitting diodes have been derived by using escape cone concepts. Based on the design principles, some important high-brightness LED structures developed thus far have been reviewed and, in addition, their external coupling efficiencies have also been estimated. In AlGaAs or InGaAIP LEDs, in which photon absorption in the ohmic electrodes is known to be serious, photon shielding by the electrodes is minimized by using window layer (WL) as well as transparent substrate (TS) leading to significantly improved light-emitting efficiency. However, in InGaN LEDs emitting blue to green lights, the photon absorption in ohmic contact to wide bandgap GaN may be negligible and therefore, photon shielding by the electrodes would not lead to as significant problems as in conventional In AIGaAs or InGaAIP LEDs.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.12
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• pp.39-48
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• 2001

We have studied the design of the photonic bandgap (PBG) structure on the microstrip line that can effectively control the fractional bandwidth of the passband formed in the stopband by adding the stub in the cell of the microstrip PBG structure. As the length of the stub increases, the cutoff frequency and the center frequency of the stopband are decreased, while the bandwidth of the stopband is increased. We have also found that the fractional bandwidth of the passband formed in stopband by the introduction of defect decreases as the stub length is increased. These results mean that adding the stub in the normal PBG structure is an effective way to control the fractional bandwidth. As an application example, we have implemented a microwave duplexer using the proposed structure.