• Title/Summary/Keyword: band-gap

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Fabrication of NNO structure NVM and comparison of electrical characteristic (NNO구조의 비활성 메모리 제작과 소자의 전기적 특성 분석)

  • Lee, Won-Baek;Son, Hyuk-Joo;Jung, Sung-Wook;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.75-75
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    • 2009
  • 반도체 및 전자기기 산업에 있어 비활성메모리 (NVM)는 중요한 부운을 차지한다. NVM은 디스플레이 분야에 많은 기여를 하고 있으며, 특히 AMOLED에 적용이 가능하여 온도에 따라 변하는 구동 전류, 휘도, color balance에 따른 문제를 해결하는데 큰 역할을 한다. 본 연구는 NNN 구조에서 터널 층을 $SiN_X$ 박막에서 $SiO_XN_Y$ 박막으로 대체하기위한 $SiO_XN_Y$ 박막을 이용한 NNO구조의 NVM에 관한 연구이다. 이로 인하여 보다 얇으면서 우수한 절연 특성을 가지는 박막을 사용함으로써 실리콘 층으로부터 전하의 터널링 효과를 높여 전하 저장 정도를 높이고, 메모리 retention 특성을 향상시키는 터널 박막을 성장 시킬 수 있다. 최적의 NNO 구조의 메모리 소자를 제작하기 위하여 MIS 상태로 다양한 조건의 실험을 진행하였다. 처음으로 블로킹 박막의 두께를 조절하는 실험을 진행하여 최적 두께의 블로킹 박막을 찾았으며, 다음으로 전하 저장 박막의 band gap을 조절하여 최적의 band gap을 갖는 $SiN_X$ 박막을 찾았다. 마지막으로 최적두께의 $SiO_XN_Y$박막을 찾는 실험을 진행하였다. MIS 상태에서의 최적의 NNO 구조를 이용하여 유리 기판 상에 NNO 구조의 NVM 소자를 제작하였다. 제작된 메모리 소자는 문턱전압이 -1.48 V로 낮은 구동전압을 보였으며, I-V의 slope 값 역시 약 0.3 V/decade로 낮은 값을 보인다. 전류 점멸비($I_{ON}/I_{OFF}$)는 약 $5\times10^6$로 무수하였다. $SiN_X$의 band gap을 다양하게 조절하여 band gap 차이에 의한 밴드 저장 방식을 사용하였다. 또한 $SiN_X$은 전하를 전하 포획(trap) 방식으로 저장하기 때문에 본 연구에서의 메모리 소자는 밴드 저장 방식과 전하 포획 방식을 동시에 사용하여 우수한 메모리 특성을 갖게 될 것으로 기대된다. 우수한 비휘발성 메모리 소자를 제작하기 위해 메모리 특성에 많은 영향을 주는 터널 박막과 전하 저장 층을 다양화하여 소자를 제작하였다. 터널 박막은 터널링이 일어나기 쉽도록 최대한 얇으며, 전하 저장 층으로부터 기판으로 전하가 쉽게 빠져나오지 못하도록 절연 특성이 우수한 박막을 사용하였다. 전하 저장 층은 band gap이 작으며 trap 공간이 많은 박막을 사용하였다.

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SiGe Alloys for Electronic Device Applications (실리콘-게르마늄 합금의 전자 소자 응용)

  • Lee, Seung-Yun
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.77-85
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    • 2011
  • The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

The Calculation of the Energy Band Gaps of Zincblende InAs1-X NX on Temperature and Composition (온도 및 조성비 변화에 따른 질화물계 화합물 반도체 InAs1-X NX의 에너지 밴드갭 계산)

  • Chung, Ho-Yong;Kim, Dae-Ik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.12
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    • pp.1165-1174
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    • 2016
  • The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.

Present Status and Prospects of Thin Film Silicon Solar Cells

  • Iftiquar, Sk Md;Park, Jinjoo;Shin, Jonghoon;Jung, Junhee;Bong, Sungjae;Dao, Vinh Ai;Yi, Junsin
    • Current Photovoltaic Research
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    • v.2 no.2
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    • pp.41-47
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    • 2014
  • Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

Crystal Growth of Cd4GeS6 and Cd4GeS6:Co2+Single Crystals ($Cd_{4}GeS_{6}$$Cd_{4}GeS_{6}:Co^{2+}$ 단결정의 성장)

  • Kim, D.T.;Kim, H.G.;Kim, N.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11b
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    • pp.1-6
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    • 2004
  • In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1,and 14975cm-1 at 11.3K.

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Analysis of the Adjacent Channel Interference from High Power Gap-filler in Satellite Digital Multimedia Broadcasting (DMB) (위성 DMB에서 지상중계기 출력에 의한 인접 채널 간섭 분석)

  • Choi, Bokun;Lee, Youngjin;Hong, Youngjin;Seo, JongSoo
    • Journal of Broadcast Engineering
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    • v.10 no.3
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    • pp.372-382
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    • 2005
  • DS/CDM-QPSK (ITU-R Recommendation BO.1130-4 Annex 6, 'Digital System E'), which has been adoptedas a standard of Korean Satellite DMB (Digital Multimedia Broadcasting) system, is a satellite-based multimedia broadcasting service which transmits the multi-channel and high quality contents to the terrestrial users through a satellite or gap-fillers. The broadcast from a satellite is directly received in the plain terrain which are within line-of-sight, but in cities where the broadcast cannot be received directly due to the shadow of buildings, an attempt is being made to install 'Gap-Fillers' to improve the reception in those areas. The gap-fillers, however, may induce interference to service of adjacent band, when their output power is substantially higher compared to the received signal power of signal from a satellite of the adjacent service. In this paper, a link budget analysis is performed, and the optimal EIRP of a gap-filler to maximize the gap-filler coverage, while preventing adjacent band interference is derived.

A study on the optical properties of PLT thin films with varying the La concentration by using the transmission spectrum (투과곡선을 이용한 La 농도에 따른 PLT 박막의 광학적 특성에 관한 연구)

  • 강성준;윤석민;윤영섭
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.5
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    • pp.22-31
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    • 1997
  • We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

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Temperature dependences of the band-gap energy and the PC intensity for $CuInSe_2$ thin films

  • You, Sang-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.139-140
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    • 2008
  • In this study, the photocurrent (PC) spectroscopy of undoped p-type CIS layers has been investigated at temperatures ranging from 10 to 293 K. Three peaks, A, B, and C, corresponded to the intrinsic transition from the valence band states off $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found at 0.0059 and 0.2301 eV, respectively, and the temperature dependence of the optical band gap could be expressed by using the empirical equation $E_g$(T) = $E_g$(0) - $(8.57\times10^{-4)T^2$/(T + 129). But the behavior of the PC was different from that generally observed in other semiconductors: the PC intensities decreased with decreasing temperature. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, the dominant level was observed at the higher temperatures. We suggest that in undoped p-type CIS layers, the trapping center limits the PC signal due to native defects and impurities with decreasing temperature.

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CdSe Sensitized ZnO Nanorods on FTO Glass for Hydrogen Production under Visible Light Irradiation (가시광 수소생산용 CdSe/ZnO nanorod 투명전극)

  • Kim, Hyun;Yang, Bee Lyong
    • Journal of Hydrogen and New Energy
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    • v.24 no.2
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    • pp.107-112
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    • 2013
  • The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.

Effects of Mobility-Gap States on the Performance of a-Si:H Field-Effect Transistors (이동도갭 상태들의 수소화된 비결정 실리콘 전계효과 트랜지스터 성능에 대한 영향)

  • 제갈장
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.52-57
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    • 1995
  • An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

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