• Title/Summary/Keyword: band structure

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A New Comb Circular Polarizer Suitable for Millimeter-Band Application

  • Eom, Soon-Young;Korchemkin, Y.B.
    • ETRI Journal
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    • v.28 no.5
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    • pp.656-659
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    • 2006
  • This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter-band application because of its simple structure and low fabrication cost. In our experiments the dual-band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements.

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Improvement of Ka band Power Amplifier Employing Photonic Band Gap Structure (PBG 구조를 이용한 Ka Band 전력증폭기 성능개선에 관한 연구)

  • Seo Chulhun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.1
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    • pp.65-68
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    • 2004
  • The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.

Desing of Dual-band VCO Using PBG Structure (PBG 구조를 이용한 Dual-band VCO 설계)

  • 조용기;서철헌
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.64-67
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    • 2003
  • This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

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Effective Self-Interference Cancellation for SSD(Simultaneous Single Band Duplex) System (SSD(Simultaneous Single Band Duplex) 시스템을 위한 효과적인 자기 간섭 제거 방법)

  • An, Changyoung;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.2
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    • pp.189-198
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    • 2014
  • In this paper, we propose a SSD(Simultaneous Single band Duplex) system using turbo equalizer with frame structure for simultaneous full-duplex communication in single band. the proposed system uses frame structure for self-interference cancellation effectively. In this paper, performance of the proposed system with frame structure compares to performance of SSD system without frame structure to analysis performance of the proposed system with frame structure. Simulation results show that the performance of proposed system with frame structure is batter than performance of SSD system without frame structure when the number of global iterations of both system is same. Using proposed system with frame structure, we can verify that the performance like SSD system without frame structure by few global iteration of turbo equalizer.

Ultra-Wideband Band-Pass Filter with Notched Wireless-LAN band (무선 랜 대역을 저지하는 초광대역 대역통과 여파기)

  • Jung, Seung-Back;Yang, Seung-In
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.9
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    • pp.60-65
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    • 2009
  • In this paper, we present a compact Ultra-Wideband band-pass later with notched band at fireless-LAN band using a band-pass and band-notch filter. The structure of our proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic, and an embedded open-stub structure is used to get the notched filter. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement, the insertion loss is less than 0.7dB throughout the pass-band of $2.21GHz{\sim}10.92GHz$, the return loss is more than 17dB and the group delay maximum variation is 0.24ns and a notched band is at $5.3GHz{\sim}5.7GHz$.

Energy band structure calculation of crystalline solids using meshfree methods (무요소법을 이8한 결정고체의 에너지 띠 구조 계산)

  • 전석기;임세영
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2002.10a
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    • pp.623-628
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    • 2002
  • A meshfree formulation for the calculation of energy band structure is presented. The conventional meshfree shape function is modified to handle the periodicity of Bravais lattice, and applied to the calculation of real-space electronic-band structure. Numerical examples include the Kronig-Penney model potential and the empirical pseudopotentials of diamond and zinc-blonde semiconductors. Results demonstrate that the meshfree method be a promising one as a real-space technique for the calculations of diverse physical band structures.

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The effect of strain on the electronic properties of MoS2 monolayers

  • Park, Soon-Dong;Kim, Sung Youb
    • Coupled systems mechanics
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    • v.5 no.4
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    • pp.305-314
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    • 2016
  • We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

Electronic Structure of Pd(111) using Angle-Resolved Phothemission Spectroscopy (각분해 광전자 분광법을 이용한 Pd(111)의 전자구조 연구)

  • Hwang, Do-Weon;Kang, Jeong-Soo;Hong, Jae-Hwa;Jeong, Jae-In;Moon, Jong-Ho;Kim, Kun-Ho;Lee, Jeoung-Ju;Lee, Young-Pak;Hong, Soon-Cheol;Min, Byung-Il
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.14-24
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    • 1996
  • We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the $\Gamma-M,\Gamma-K,\Gamma-M$TEX> symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the $\kappa$-points in the Brillouin zone. In additin, the experimental band widths are narrower than the theoretical band widths by about 0.5eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.

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A Study on the Band Characteristics of ZnSe Thin Film with Zinc-blende Structure (Zinc Blende 구조를 가지는 ZnSe 결정의 밴드 특성에 관한 연구)

  • Park, Jeong-Min;Kim, Hwan-Dong;Yoon, Do-Young
    • Journal of the Korean Electrochemical Society
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    • v.14 no.3
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    • pp.145-151
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    • 2011
  • ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

The Optimal Design of a Triple-Band Antenna with Additional Arm Resonating Structure for LTE, ISM and WLAN Application (LTE, ISM, WLAN에 적용 가능한 Arm 구조 삼중대역 안테나 최적 설계)

  • Lee, Seung-Je;Oh, Seung-Hun;Lee, Jeong-Hyeok;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.12
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    • pp.1655-1660
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    • 2014
  • In this paper, we propose a design of a triple-band microstrip circular patch antenna. The proposed antenna generates the triple frequency resonance at 1.85GHz(LTE), 2.45GHz(ISM) and 5.5GHz(WLAN). Firstly, we design the dual-band antenna. The dual-band antenna consist of the circular patch, slits, and the slot. The circular patch and slot are designed for dual frequency of 2.45GHz and 5.5GHz, respectively. And then the dual-band antenna is combined with additional arm-shaped structure for the triple-band characteristic. The arm-shaped structure is operated as the dipole. It is designed for lowest frequency of 1.85GHz. Each part of the antenna unites to a new structure. In order to design the proposed antenna automatically and optimally, APSO algorithm is adopted. During APSO, the mismatch of the proposed antenna is resolved. The optimal designed antenna has an acceptable return loss(-10dB) at each bands(i.e, 1.85GHz, 2.45GHz and 5.5GHz).