• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Journal of the Earthquake Engineering Society of Korea
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• v.22 no.3
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• pp.175-184
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• 2018

In this paper, comparative analysis of the 9.12 Gyeongju and 11.15 Pohang earthquakes was conducted in order to provide probable explanations and reasons for the damage observed in the 11.15 Pohang earthquake from both earthquake and structural engineering perspectives. The damage potentials like Arias intensity, effective peak ground acceleration, etc observed in the 11.15 Pohang earthquake were generally weaker than those of the 9.12 Gyeongju earthquake. However, in contrast to the high-frequency dominant nature of the 9.12 Gyeongju earthquake records, the spectral power of PHA2 record observed in the soft soil site was highly concentrated around 2Hz. The base shear around 2 Hz frequency was as high as 40% building weight. This frequency band is very close to the fundamental frequency of the piloti-type buildings severely damaged in the northern part of Pohang. Unfortunately, in addition to inherent vertical irregularity, most of the damaged piloti-type buildings had plan irregularity as well and were non-seismic. All these contributed to the fatal damage. Inelastic dynamic analysis indicated that PHA2 record demands system ductility capacity of 3.5 for a structure with a fundamental period of 0.5 sec and yield base shear strength of 10% building weight. The system ductility level of 3.5 seems very difficult to be achievable in non-seismic brittle piloti-type buildings. The soil profile of the PHA2 site was inversely estimated based on deconvolution technique and trial-error procedure with utilizing available records measured at several rock sites during the 11.15 Pohang earthquake. The soil profile estimated was very typical of soil class D, implying significant soil amplification in the 11.15 Pohang earthquake. The 11.15 Pohang earthquake gave us the expensive lesson that near-collapse damage to irregular and brittle buildings is highly possible when soil is soft and epicenter is close, although the earthquake magnitude is just minor to moderate (M 5+).

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.138-143
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• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.154.2-154.2
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• 2016

In this work, we introduce a solution-processed CdS interlayer for use in inverted bulk heterojunction (BHJ) solar cells, and compare this material to a series of standard organic and inorganic cathode interlayers. Different combinations of solution-processed CdS, ZnO and conjugated polyelectrolyte (CPE) layers were compared as cathode interlayers on ITO substrates to construct inverted solar cells based on $PTB7:PC_{71}BM$ and a $P3HT:PC_{61}BM$ as photoactive layers. Introduction of a CdS interlayer significantly improved the power conversion efficiency (PCE) of inverted $PTB7:PC_{71}BM$ devices from 2.0% to 4.9%, however, this efficiency was still fairly low compared to benchmark ZnO or CPE interlayers due to a low open circuit voltage ($V_{OC}$), stemming from the deep conduction band energy of CdS. The $V_{OC}$ was greatly improved by introducing an interfacial dipole (CPE) layer on top of the CdS layer, yielding outstanding diode characteristics and a PCE of 6.8%. The best performing interlayer, however, was a single CPE layer alone, which yielded a $V_{OC}$ of 0.727 V, a FF of 63.2%, and a PCE of 7.89%. Using $P3HT:PC_{61}BM$ as an active layer, similar trends were observed. Solar cells without the cathode interlayer yielded a PCE of 0.46% with a poor $V_{OC}$ of 0.197 V and FF of 34.3%. In contrast, the use of hybrid ZnO/CPE layer as the cathode interlayer considerably improved the $V_{OC}$ of 0.599 V and FF of 53.3%, resulting the PCE of 2.99%. Our results indicate that the CdS layer yields excellent diode characteristics, however, performs slightly worse than benchmark ZnO and CPE layers in solar cell devices due to parasitic absorption below 550 nm. These results suggest that the hybrid inorganic/organic interlayer materials are promising candidates as cathode interlayers for high efficiency inverted solar cells through the modification of interface contacts.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4842-4848
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• 2015

This paper presents a comparison of communication performance between the reconfigurable beam-steering antenna and the omni-directional (loop) antenna during standstill and walking motion. Both omni-directional and reconfigurable antennas were manufactured on the same fabric (${\varepsilon}_r=1.35$, $tqn{\delta}=0.02$) substrate and operated around 5 GHz band. The reconfigurable antenna was designed to steer the beam directions. To implement the beam-steering capability, the antenna used two PIN diodes. The measured peak gains were 5.9-6.6 dBi and the overall half power beam width (HPBW) was $102^{\circ}$. In order to compare the communication efficiency, both the bit error rate (BER) and the signal-to-noise ratio (SNR) were measured using a GNU Radio Companion software tool and user software radio peripheral (USRP) devices. The measurement were performed when both antennas were standstill and walking motion in an antenna chamber as well as in a smart home environment. From these results, the performances of the reconfigurable beam steering antenna outperformed that of the loop antenna. In addition, in terms of communication efficiencies, in an antenna chamber was better than in a smart home environment. In terms of movement of antennas, standstill state has better results than walking motion state.

• Journal of KIISE:Information Networking
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• v.31 no.4
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• pp.375-383
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• 2004

As wireless mobile networks have been widely adopted due to their convenience for deployment, the research for improving their performance has been actively conducted. Since their throughput is restrained by the packet corruption rate not by congestion as in wired networks, however, network simulations for performance evaluation need to select the appropriate wireless channel model representing the behavior of propagation errors for the evaluated channel. The selection of the right model should depend on various factors such as the adopted frequency band, the level of signal power, the existence of obstacles against signal propagation, the sensitivity of protocols to bit errors, and etc. This paper analyzes 10-day bit traces collected from real sensor channels exhibiting the high bit error rate to determine a suitable sensor channel model. For selection, it also evaluates the performance of two error recovery algorithms such as a link layer FEC algorithm and three TCPs (Tahoe, Reno, and Vegas) over several channel models. The comparison analysis shows that CM(Chaotic Map) model predicts 3-time less BER variance and 10-time larger PER(Packet Error Rate) than traces while these differences between the other models and traces are larger than 10-time. The simulation experiments, furthermore, prove that CM model evaluates the performance of these algorithms over sensor channels with the precision at least 10-time more accurate than any other models.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.216-222
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• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Journal of the Korean Institute of Intelligent Systems
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• v.18 no.5
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• pp.724-729
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• 2008

This paper presents the calculation of the required bandwidth of common frequency bandwidth applying queueing theory for maximizing the efficiency of frequency resource of WPAN(Wireless Personal Area Network) based Digital acoustic and communication devices. It assumed that LBT device(ZigBee) and FH devices (DCP, RFID and Bluetooth) coexist in the common frequency band for WPAN based Digital acoustic and communication devices. Frequency hopping (FH) and listen before talk (LBT) have been used for interference avoidance in the short range device (SRD). The LBT system transmits data after searching for usable frequency bandwidth in the radio wave environment. However, the FH system transmits data without searching for usable frequency bandwidth. The queuing theory is employed to model the FH and LBT system, respectively. As a result, the throughput for each channel was analyzed by processing the usage frequency and the interval of service time for each channel statistically. When common frequency bandwidth is shared with SRD using 250mW, it was known that about 35 channels were required at the condition of throughput 84%, which was determined with the input condition of Gaussian distribution implying safety communication. Therefore, the common frequency bandwidth is estimated with multiplying the number of channel by the bandwidth per channel. These methodology will be useful for the efficient usage of frequency bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.815-824
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• 2005

In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.