• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.13-19
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• 2004

This paper demonstrates the detailed study of a microstrip Yagi-Uda antenna with and without PBG structure at wireless LAN(5725∼5825 MHz) frequency band. The impedance bandwidth of the antenna with the PBG holes is greater than (about 30 MHz) that of its counter part without PBG holes. The measured gains of the antenna at the frequency band are 7 dB and 6 dB respectively for antenna with and without PBG. The improvement of gain of about 1 dB is likely due to the suppression of surface wave.

• ETRI Journal
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• v.13 no.4
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• pp.25-34
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• 1991

The stability and the electronic structure of $In_0.5$.$Ga_0.5$P-based superlattices are examined through self-consistent ab initio pseudopotential calculations. A chalcopyrite-like structure is found to be the lowest energy state over (001) and (111) monolayer superlattices (MLS). Our calculations indicate that all the ordered structures in bulk form are unstable against phase segregation into binary constituents at T = 0 while for epitaxial growth, the chalcopyrite phase is stabilized. The fundamental band gaps of the ordered structures are found to be direct and smaller than that of disordered alloys. The lowering of the band gap is explainable by band folding and pushing effects. We find the reduction of the band gap to be largest for the (111) MLS.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.392-395
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• 2015

Metal Mono Chalcogenides(MMC)는 각각의 III족 metal 원자당한개의 chalchogen 원자를 갖고 있는(MX, M=Ga and In, X=S, Se, and Te)층상구조 화합물이다. MMC가 주목받는 가장 큰 이유는 single tetralayer MMC(SL-MMC)라는 2차원 구조를 갖기 때문이다. 2차원 물질은 다양한 물리적 현상을 증명하기 용이하다는 특징을 갖는다. 이 논문에서 우리는 SL-MMC중 Ga-MMC에서 chalchogen 원자가 변화함에 따라 바뀌는 실험 lattice constant를 조사하여 band gap과 formation energy를 Density Function Theory(DFT)로 계산했다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1405-1407
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• 2009

We prepared polystyrene-b-poly(2-vinyl pyridine) (PSb-P2VP) lamellar films which is hydrophobic block-hydrophilic polyelectrolyte block polymer have 57 kg/mol-b-57 kg/mol. The result of UV-visible absorption spectra supported that effect of poly(ethylene oxide) on the band gap tuning of PS-P2VP photonic gel like salt effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.105-108
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• 2007

Chiral liquid crystals exhibit band-gap structures responsive to electrical and optical fields, providing wide-ranging opportunities for photonics applications. We discuss three aspects of this technology: optics of chiral nematic devices and removal of pitch jumps; optical switching of chiral nematic materials; and using novel phases in photonic devices.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.117-123
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• 2015

Cholesteric liquid crystals are one dimensional photonic band-gap materials due to their birefringence and periodic structure. Dye doped cholesteric liquid crystals are self-assembling, mirror-less, low threshold laser structures that exhibit distributed feedback. In this review paper, we have presented the development in the field of lasing characteristics of dye doped cholesteric liquid crystals.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.214-216
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• 2013

The atomic and electronic properties of molybdenum disurfide ($MoS_2$) nanostructures are investigated through density functional theory (DFT) calculations. We find that the band gap is indirect (about 1.79 eV) and direct (about 1.84 eV) in GGA for 2-dimensional $MoS_2$ in our calculations. On the other hand, 1-dimensional armchair nanoribbons have semiconductor properties (band gap is about 0.11~0.28 eV), while 1-dimensional zigzag nanoribbons are metallic.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.226-227
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• 2003

광자 크리스탈 (Photonic Crystals)은 서로 다른 유전체의 주기적인 구조로 이루어져 있으며, 전자기파가 특정한 주파수 범위에서 전파하지 못하고 차단되는 영역인 광자 밴드갭 (Photonic Band Gap)이 존재한다. 이러한 광자 밴드갭의 존재로 인하여 빛의 흐름을 조절할 수 있다는 점 때문에 반사거울, 휘어진 도파로(bent waveguide), 레이저, 채널 드롭핑 필터(channel dropping filter) 등 여러 가지 다양한 분야에 응용될 수 있다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.