• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.977-979
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• 2006

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.838-841
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and insertion loss by analyzing the characteristics of 2-port resonator. This was done through designing an air-gap type Film Bulk Acoustic Resonator (FBAR) by using CAD model for the application of bandpass filter of high-frequency band with piezoelectric thin film. Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.261-261
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• 2010

Photonic band gap (PBG) materials have been of great interest due to their potential applications in science and technology. Their applications can be further extended when PBG becomes tunable against various chemical and electrical stimuli. In recent, it was found that tunable photonic band gap materials can be achieved by incorporating stimuli-responsive smart gels into PBG materials. For example, the characteristic volume phase transition of gels in response to the various external stimuli including temperature, pH, ionic strength, solvent compositions and electric field were recently combined with the unique optical properties of photonic crystals to form unprecedented highly responsive optical components. Since these responsive photonic crystals are capable of reversibly converting chemical or electrical energy into characteristic optical signals, they have been considered as a good platform for label-free chemical or biological detection, actuators or optical switches as well as a model system for investigating gel swelling behavior. Herein, we report block copolymer photonic gels self-assembled from polystyrene-b-poly (2-vinyl pyridine) (PS-b-P2VP) block copolymers. In this talk, we are going to demonstrate that selective swelling of lamellar structure can be effectively utilized for fabricating PBG materials with extremely large tunability. Optical properties and their applications will be discussed.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.378-381
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• 2015

To produce low cost and efficient photovoltaic cells, inorganic-organic lead halide perovskite materials appear promising for most suitable solar cells owing to their high power conversion efficiency. Most recent research showes that formamidinium lead iodide ($FAPbI_3$) with methylammonium lead bromide ($MAPbBr_3$) improves the power conversion efficiency of the solar cell to more than 18 per cent under a standard illumination because incorporated $MAPbBr_3$ makes $FAPbI_3$-relatively unstable but comparatively narrow band gap-more stable composition. In respect to first principle study, we investigated band gap of $MAPbI_3$, $FAPbI_3$, $MAPbBr_3$, $(FAPbI_3)_{0.89}-(MAPbBr_3)_{0.11}$ and 0.615(eV), 0.466, 1.197, 0.518 respectively through EDISON DFT software. These results emphasize enhancing structure stability is important factor as well as finding narrow band gap.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.612-612
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.93-93
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• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Current Photovoltaic Research
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• 제7권2호
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• pp.29-32
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• 2019

Large band gap attenuation of CdS nanoclusters in hybrid sol gel matrix comprised of 3-(trimethoxysilyl)propyl methacrylate (TMSPM), 15 wt. % zirconium, and various amounts of cadmium acetate was observed after $H_2S$ exposure. Hybrid sol gel matrixes were prepared by hydrolysis and condensation reactions. The sol gels contained with various amount of cadmium acetate were spin coated to glass substrates and exposed to $H_2S$ gas. The UV-visible absorption peaks were shifted toward blue with increasing the amount of CdS nanoclusters and were shifted to the red after thermal process. Significant amount of -OH absorption peaks were reduced after thermal process. Strong room temperature photoluminescence (PL) of CdS nanoclusters was observed after exposing to $H_2S$ gas. The PL intensity increased for several minutes and slowly decreased thereafter. The luminescence peaks were continuously shifted toward blue as the time passed. Extraordinary Stokes shift (approximately 160 nm) was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.