• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.80-81
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• 2008

In this paper, we have designed the Anti-Reflection (AR) coating for 850, 1310 nm(multi type) and 1310, 1550 nm(multi type) wavelength ranges on the ferrule facet of special optical connector. The reflectance of the AR coated ferrule facet is designed under 5% for 850, 1310 nm(multi type) and 1310, 1550 nm (multi type). The average return loss of the AR coated ferrule facet is 47.1 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.109-112
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• 2002

The structural and optical features of Porous Silicon(PS) were investigated; the porous silicon was prepared by electrochemical etching of silicon wafers in HF solution. The morphologies and Photoluminescece(PL) features of the PS were investigated in terms of etching time, current density and aging conditions. The average pore diameter and pore depth were determined by current density and etching time, respectively. As-prepared PS exhibited the maximum PL peak at the wavelength of ∼ 450 nm. The degree of deviation from as-prepared PS during aging treatment seemed to depend on the microstructure as well as morphology of the PS. It is found that etching current density played an important role on the microstructural features of the PS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.249-249
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• 2010

We investigated novel surface treatment and its impact on silicon photovoltaic cells. Using 2-step etching methods, we have changed the nanostructure on pyramid surface so that less light is reflected. This work proposes an improved texturing technique of mono crystalline silicon surface for solar cells with sub-nanotexturing process. The nanotextured silicon surface exhibits a lower average reflectivity (~4%) in the wavelength range of 300-1100nm without antireflection coating layer. It is worth mentioning that the surface of pyramids may also affect the surface reflectance and carrier lifetime. In one word, we believe nanotextruing is a promising guide for texturization of monocrystalline silicon surface.

• ETRI Journal
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• v.28 no.1
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• pp.119-122
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• 2006

We present an intelligent optical switching structure based on our lambda-group model along with a working scheme that can provide a distinctive approach for dividing complicated traffic into specific tunnels for better optical performance and grooming efficiency. Both the results and figures from our experiments show that the particular channel partition not only helps in reducing ports significantly, but also improves the average signal-to-noise ratio of the wavelength channel and the blocking performance for dynamic connection requests.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.845-848
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• 1999

We designed and fabricated partially shorted QMSAs(Quarter-Wavelength Microstrip Antennas) for 850［MHz］band on various Copper-clad Laminates substrates (TACONIC company), where the width of the radiation patch is identical with that of the ground plane and the radiation patch is partially shorted to the ground plane. The resonant frequencies and the return losses according to the electrical thickness were measured by reducing the PSW (Partially Shorted Width) to 0［mm］. As a result, a good characterized antenna with an average 11% reduced resonant length and a return loss -15.86~-30.68［㏈］ was obtained when the total PSW was in the range of 70% of radiated patch width, compared to the conventional QMSA.

• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.192-193
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• 1998

At Rutherford Appleton Laboratory(RAL), a high-repetition rate ps exicmer laser-plasma x-ray source has been developed for x-ray lithography with a calibrated output of up to 1 watt X-ray average power at 1nm wavelength. In a previous reports this compact x-ray source was used to print 0.18$\mu$m lines for a gate on Si-FET devices and deep three-dimensional structure with 100$\mu$m length, 25$\mu$m width, and 48 $\mu$m depth for a nanotechnology. The deep X-ray lithography is called as LIGA thchnology and getting a wide interest as a new technology for a nano-device. In this report all this works are summarized.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Analytical Science and Technology
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• v.30 no.1
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• pp.20-25
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• 2017

An analytical method for determining potential endocrine disruptors (bisphenol A, 2-chlorophenol, 2,4-dichlorophenol, 2,4,6-trichlorophenol, pentachlorophenol, p-t-butylphenol, p-pentylphenol, p-hexylphenol, p-t-octylphenol, p-heptylphenol, nonylphenol) by solid-phase extraction (SPE) and High Perfomance Liquid Chromatography(HPLC) equipped with fluorescence and variable wavelength detector has been developed. The SPE process for sample concentration was performed on a commercially available Oasis HLB cartridge packed with polymeric sorbents. The effect of elution solvent and elution volume on the recoveries of the analytes were investigated with HPLC. Average recovery of >85% was achieved with 60mg sorbents using 5mL of methanol as elution solvent. Phenolic compounds in canned drinks, beverages and water samples were surveyed by this proposed method.