• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.382-383
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• 2006

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150~200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400{\sim}800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding. average grain size about 500~1000 nm influenced by annealing temperature. The piezoelectric properties of prepared SBN thin film, the remanent polarization value(2Pr) and coercive field was $1.2{\mu}C/cm^2$ and 2.15V/cm, respectively.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.837-843
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• 2009

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

• 한국해양공학회지
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• 제27권6호
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• pp.95-99
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• 2013

Lead zirconate titanate (PZT) thick films with a thickness of $10-20{\mu}m$ were fabricated on silicone substrates using an aerosol deposition method. The starting powder, which had diameters of $1-2{\mu}m$, was observed using SEM. The average diameter ($d_{50}$) was $1.1{\mu}m$. An XRD analysis showed a typical perovskite structure, a mixture of the tetragonal phase and rhombohedral phase. The as-deposited film with nano-sized grains had a fairly dense microstructure without any cracks. The deposited film showed a mixture of an amorphous phase and a very fine crystalline phase by diffraction pattern analysis using TEM. The as-deposited films on silicon were annealed at a temperature of $700^{\circ}C$. A 20-${\mu}m$ thick PZT film was torn out as a result of the high compressive stress between the PZT film and substrate.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 대한방사선기술학회지:방사선기술과학
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• 제32권1호
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• pp.53-60
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• 2009

인체의 $40{\sim}50%$인 연부조직에 X선을 조사하면 연부조직의 두께에 따라 투과선량이 감소하며 영상에도 질적 저하를 가져온다. 본 연구는 복부 촬영시 위장내 내용물에 따라 X선 감약 및 화질에 차이가 나타날 수 있다는 가정 하에 실제 위의 조직과 비슷한 조직등가물질 phantom을 제작하여 실제 위장내 내용물에 따른 X선의 감약 변화와 DR (Digital Ridiography)의 ROI수치를 비교해보았다. 단백질 두께가 증가할수록 X-선 감약에 의한 투과선량이 감소되었으며(p < 0.001), Film과 DR 영상에서의 ROI Mean값의 변화도 감소하였다(p <0.001). Film과 DR 영상에서의 ROI Mean값에 대한 비교는 Film이 DR 영상에 비해 단백질 두께에 따른 농도의 변화 값이 크게 나타났다(p < 0.001). 이와 같은 결과를 종합해 볼 때 DR system 촬영 보다는 필름을 사용하는 단순촬영에서 금식(NPO ; nothing by mouth)의 필요성이 더 중요함을 알 수 있다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년 영문 학술대회
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• pp.218-225
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• 2008

When the heat release and acoustic pressure fluctuations are generated in the combustor by irregular combustion, these fluctuations affect the mass flow rate of the propellants injected through the injectors. Also, the variations of the mass flow rate by these fluctuations again bring about irregular combustion and furthermore that is related with combustion instability. Therefore, it is very important to identify the mass variation for the pressure fluctuation on the injector and to investigate its transfer function. So, we first have studied quantifying the variation of mass flow rate generated in simplex swirl injector by injection pressure fluctuation. To acquire the transient mass flow rate in orifice with time, we have tried to measure of the flow axial velocity and liquid film thickness in orifice. The axial velocity is acquired through theoretical approach after measuring the pressure in orifice and the flow area in the orifice is measured by electric conductance method. As results, mass flow rate calculated by axial velocity and liquid film thickness measuring in orifice accorded with mass flow rate acquired by direct measuring method in the small error range within 1 percents in steady state and within 6 percents as average mass flow rate in pulsated state. Hence this method can be used to measure the mass flow rate not only in steady state but also in unsteady state because the mass flow rate in the orifice can acquire with time and this method shows very high accuracy based on the experimental results.

• Current Photovoltaic Research
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• 제7권4호
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.549-554
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• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• 대한기계학회논문집B
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• 제22권9호
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• pp.1195-1207
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• 1998

Periodic pulsations in the static pressure near turbine surfaces as blade rows move relative to each other is one of the important sources of turbine unsteadiness. The present experiment aims to investigate the effect of the static pressure pulsations on the interaction of film coolant flows from two rows of staggered holes with mainstream and its effect on film cooling heat transfer. Potential flow pulsations are generated by the rotating shutter mechanism installed downstream of the test section, The free-stream Strouhal number based on the boundary layer thickness is in the range of 0.033 - 0.33, and the amplitude of about 10-20%. Measured are time-averaged and phase-averaged velocity variations, pressure variations and temperature distributions of the flow field. Experimental conditions are identified by boundary layer measurements. Injectant behavior is characterized by the measurements of unsteady pressure in the plenum chamber and free-stream static pressure. The film cooling effectiveness is evaluated from the insulated wall temperature measurement. It has been found that bulk flow pulsation provides very large diffusion of the injectants and the effectiveness is significantly reduced by the flow pulsations.