• 제목/요약/키워드: average film thickness

검색결과 189건 처리시간 0.023초

Tb/Co 조성변조 다층박막의 자기 및 광자기적 성질에 관한 연구 (A Study on the Magnetic and Magneto-Optical Properties of Tb/Co Composition Modulated Multilayer Films)

  • 홍석지;김상록;이성래
    • 한국자기학회지
    • /
    • 제6권3호
    • /
    • pp.158-164
    • /
    • 1996
  • 동시진공증착으로 제조한 Tb/Co 조성변조 다층박막의 자기적 성질 및 광자기적 성질을 Tb의 두께 및 Tb/Co 각 층의 두께 비에 대하여 연구하였으며 열처리시 자기적 거동의 변화를 분석하였다. Tb의 두께가 $12{\AA}$일 때가 가장 큰 범위에서 수직자기이방성을 보였고, 최고 $6.52{\times}10^{6}erg/cc$의 수직자기이방성 에너지 값을 얻었다. Tb의 두께가 $12{\AA}$에서 최대 수직자기이방성을 보이는 것은 Tb/Co 계면에서의 Tb-Co이종 원자쌍뿐만 아니라 Tb-Tb, Co-Co 동종 원자쌍도 수직자기이방성에 기여하기 때문으로 사려된다. Kerr 회전각$({\theta}_k)$은 수직자기이방성 에너지$(K_{u})$와 비례, 평균 스핀분산각$(\alpha)$과는 반비례하는 거동을 보였으며 Tb두께 $12{\AA}$, 두께비 1.55에서 최대 Kerr 회전각 $0.28^{\circ}$를 얻었다. 열처리시 나타나는 비정상적인 이력곡선은 Tb층의 우선적인 산화로 Tb의 유효조성이 감소하여 조성이 보상점 근처로 이동하게 되어 Co층과의 보자력 차이가 커져서 나타난다.

  • PDF

요오드화 나트륨을 사용한 유치 근관 충전재의 효과 (Effectiveness of Sodium Iodide Root Canal Filling Pastes in Primary Teeth)

  • 장수진;김유진;이정환;김종수;이준행;한미란;신지선;김종빈
    • 대한소아치과학회지
    • /
    • 제50권2호
    • /
    • pp.168-178
    • /
    • 2023
  • 이 연구의 목적은 유치에 있어 요오드화 나트륨을 사용한 근관 충전재의 효과를 알아보는 것이다. 요오드화 나트륨 근관 충전재의 효과를 알아보기 위해 현재 유치에서 가장 많이 사용하고 있는 근관 충전재와 비교하여 물리적 특성 및 항균성을 평가하였다. 비교한 기존의 근관 충전재는 Vitapex®와 Metapex®이며, 평가한 물리적 특성은 유동성, 피막도, 방사선 불투과성이다. 또한 항균성은 Enterococcus faecalis 균주(ATCC 6538)를 대상으로 평가하였다. 유동성 및 피막도는 기존의 근관 충전재와 요오드화 나트륨 근관충전재에서 통계적으로 유의미한 차이를 보이지 않았다(p > 0.05). 요오드화 나트륨 근관충전재는 방사선 불투과성이 기존의 충전재에 비해 더 낮은 결과값을 보였으며 이는 통계적으로 유의미한 차이를 보였다(p < 0.05). 요오드화 나트륨 근관충전재가 기존 충전재보다 더 높은 항균성을 보였으며 이 또한 통계적으로 유의미한 상관관계를 나타냈다(p < 0.05). 요오드화 나트륨 근관 충전재는 기존의 상품화된 근관 충전재와 효과를 비교하였을 때 유동성이나 피막성에 대해 떨어지지 않는 성능을 보였으며, 항균성에 대해서는 더 우월한 결과를 보여 기존 충전재의 대안제로 고려해 볼 수 있을 것으로 사료된다.

솔-젤법에 의한 $SiO_2-ZrO_2$계 무반사 박막의 제조 (Fabrication of Sol-Gel derived Antireflective Thin Films of $SiO_2-ZrO_2$ System)

  • 김병호;홍권;남궁장
    • 한국세라믹학회지
    • /
    • 제32권5호
    • /
    • pp.617-625
    • /
    • 1995
  • In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

  • PDF

$Ar/O_2$ 비에 따른 PZT/BST 이종층 박막의 구조적 특성 (The Structural Properties of the PZT/BST Heterolayered Thin Films with $Ar/O_2$ Ratio)

  • 이의복;남성필;이상철;김지헌;이영희
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
    • /
    • pp.607-610
    • /
    • 2004
  • The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

  • PDF

Average Flow Model을 이용한 Kurtosis에 따른 Flow Factors에 관한 연구 (Effects of Kurtosis on the Flow Factors Using Average Flow Model)

  • 강민호;김태완;구영필;조용주
    • Tribology and Lubricants
    • /
    • 제17권3호
    • /
    • pp.236-243
    • /
    • 2001
  • In this study, flow factors are evaluated in terms of kurtosis using random rough surface generated numerically. As h/$\sigma$become large ø$\sub$x/, ø$\sub$y/, ø$\sub$fp/, approach to 1 and ø$\sub$s/, ø$\sub$fs/ to 0 asymptotically regardless of kurtosis. ø$\sub$x/, ø$\sub$y/, ø$\sub$fp/ increase with increasing kurtosis in the mixed lubrication regime. ø$\sub$s/, ø$\sub$fs/ is associated with an additional flow transport due to the combined effect of sliding and roughness. As h/$\sigma$ decreases ø$\sub$s/, ø$\sub$fs/ increase up to a certain point, and then decrease toward zero. This behavior can be attributed to the increasing number of contacts in the mixed lubrication regime. ø$\sub$x/ in the presence of elastic deformation on the surface is larger than ø$\sub$x/ in the absence of it because local film thickness(h$\sub$T/) increases by elastic deformation.

AlGaAs/GaAs HBT의 제작과 특성연구 (Fabrication and Characterization of AlGaAs/GaAs HBT)

  • 박성호;최인훈;오응기;최성우;박문평;윤형섭;이해권;박철순;박형무
    • 전자공학회논문지A
    • /
    • 제31A권9호
    • /
    • pp.104-113
    • /
    • 1994
  • We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

  • PDF

인쇄과정에서 코팅 용지의 국부적인 표면강도 변화에 관한 연구 (The Local Surface Strength Variation of Coated Papers during Printing)

  • 윤종태
    • 한국인쇄학회지
    • /
    • 제22권2호
    • /
    • pp.101-110
    • /
    • 2004
  • The local surface strength variation of coated papers were measured at various speeds on a number of coated paper samples to study the effects of speed and ink tack on coating pick. Coating pick phenomenon is observed in an ink transfer variation curve as a decrease in the slope of the curve. On the other hand, it causes an actual decrease in net ink transfer to paper with an increase in speed. The effect of speed on coating pick depends on ink tack, ink film thickness and surface properties of coating layer formation of paper. A novel device to measure the surface strength can rate the coating paper in a different order. Comparison are made between dry test of coating paper pick and wet coating pick test of printing in IGT printability tester. Coating formulation is the main key to prevent from coating pick. The binder level increases, the coating pick and the slop decrease. The piling on blanket in printing is a problem when the coating pick is occur on a local area rather than average surface strength of coated papers.

  • PDF

Facile preparation of superhydrophobic thin films using non-aligned carbon nanotubes

  • Goh, Yee-Miin;Han, Kok Deng;Tan, Lling-Lling;Chai, Siang-Piao
    • Advances in nano research
    • /
    • 제2권4호
    • /
    • pp.219-225
    • /
    • 2014
  • A simple preparation method on creating superhydrophobic surface using non-aligned carbon nanotubes (CNTs) was demonstrated. Superhydrophobic CNT thin films were prepared by doping a sonicated mixture of CNTs and chloroform onto a glass slide. Water contact angles of the CNT thin films were measured using a contact angle goniometer. The thin films were characterized using laser microscope and scanning electron microscope. Experimental results revealed that the highest average contact angle of $162{\pm}2^{\circ}$ was achieved when the films' thickness was $1.628{\mu}m$. The superhydrophobic surface was stable as the contact angle only receded from $162{\pm}2$ to $157{\pm}2^{\circ}$ after 10 min under normal atmospheric condition.

대향 타겟 스퍼터링 법을 이용한 투명전극용 AZO/Ag/AZO 다층 박막의 제작 (Preparation of AZO/Ag/AZO multilayer for transparent electrode by using facing targets sputtering method)

  • 조범진;김경환
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
    • /
    • pp.290-291
    • /
    • 2006
  • We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

  • PDF

방전 플라즈마 CVD에 의한 전력용 고합 TFT의 개발 (Development of High Voltage TFT by Discharge Plasma Chemical Vapor Depoisition)

  • 이우선;강용철;김병인;양태환;정해인;정용호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1993년도 춘계학술대회 논문집
    • /
    • pp.137-141
    • /
    • 1993
  • We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with $2500{\AA}\;SiO_2$, $400-1500{\AA}$ a-Si thickness, 350V output voltage, 100V input voltaege, and $9.55{\times}10^4$ average on/off ratio. We found that leakage current of high voltage TFT occured 0-70V drain voltage.

  • PDF