• Journal of the Korea Organic Resources Recycling Association
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• v.16 no.4
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• pp.57-63
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• 2008

The characteristics of the bio-oil produced by the pyrolysis process with pig feces was investigated in this paper. The continuous auger-type reactor produced bio-oil was maintained at the temperature range of 400 to $600^{\circ}C$, which was higher than a typical that in a conventional pyrolysis system. The pig feces was used as the feedstock. The bio-oil and its compositions were characterized by water analysis, heating values, elemental analysis, bio-oil compounds, by Gas Chromatography/Mass Spectrometry (GC/MS), and functional group by $^1H$ NMR spectroscopy. It was found that the maximum bio-oil yields of 21% w.t. was achieved at $550^{\circ}C$. This result suggested that this auger reactor might be a potential technology for livestock waste treatment to produce bio-oil because it is able to be improved to reach higher efficiency of bio-oil production in further study. The pyrolysis system reported herein had low heat transfer into the feedstock in the auger reactor so that it needs improve the heat conduction rate of the system in further study.

• Clean Technology
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• v.24 no.1
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• pp.70-76
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• 2018

Pyrolysis of Saccharina japonica in an Auger reactor was conducted by varying the temperature and the auger speed and then physicochemical properties of the S. japonica-derived pyrolysis oil were analyzed. The maximum yield of S. japonica-derived pyrolysis oil (32 wt%) was obtained at a pyrolysis temperature of $412^{\circ}C$ and an auger speed of 20 rpm. Due to low carbon content and high oxygen content in the pyrolysis oil, the higher heating value of S. japonica-derived pyrolysis oil was $23.6MJ\;kg^{-1}$, which was about 60% that of conventional hydrocarbon fuels. By GC/MS analysis, 1,4-Anhydro-d-galactitol, dianhydromannitol, 1-hydroxy 2-propanone and isosorbide were identified as the main chemical compounds of S. japonica-derived pyrolysis oil. The bio-char has low higher heating value ($13.0MJ\;kg^{-1}$) due to low carbon content and high oxygen content and contains a large amount of inorganic components and sulfur.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.29-31
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• 1993

NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.51-58
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• 1998

ZnS and TB-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (AKE) and characterized using materials and surface analysis techniques. $ZnCl_2$, $H_2$S,and tris(2,26,6-tetramethyl-3,5-heptandionato) terbium ($Tb(TMHD)_3$) were used as the precursors in the growth of ZnS:Tb films. The dependence of Cl content in ZnS films on growth temperature was investigated using Rutherford backscattering spectrometry. The Cl content decreased from approximately 9 at.% to 1 at. % as increasing the growth temperature from 400 to $500^{\circ}C$. The segregation of Cl in near surface region was also observed by depth profiling using Auger electron spectroscopy. Scanning electron microscopic studies showed that the ALE-grown ZnS and ZnS:Tb film during ALE process using $Tb(TMHD)_3$was also investigated. Approximately 1 at.% of O in ZnS:Tb(0.5 at.%) film which showed a good crystallinity of hexagonal 2H structure.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.290-296
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• 1990

Ion-surface collision studies at low kinetic energies (1-100 eV) provide a unique opportunity for investigating reactions and collision dynamics at surfaces. A special ion optics system for generating an energy- and mass-selected ion beam of this energy is designed and constructed. An ultrahigh vacuum (UHV) reaction chamber, in which the ions generated from the beamline collide with a solid surface, is equipped with Auger electron spectroscopy (AES) and thermal desorption spectrometry (TDS) as in-situ surface analytical tools. The resulting beam from the system has the following characteristics : ion current of 5-50 nA, energy spread < 2eV, current stability within ${\pm}5%,$ and unit mass resolution below 20 amu. The performance of the instrument is illustrated with data representing the implantation behavior of $Ar^+$ into a graphite (0001) surface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1649-1655
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• 1988

Thermally growon SiO2 films were thermally nitrided in a hot-wall furnace and in a RF-heated cold-wall reactor and their characteristics were investigated by the AES and the C-V dmeasurements. The Auger depth profile show that 200\ulcornerSiO2 film nitrided at 1200\ulcorner, for 2hrs by the hot-wall process has a nitrogen-rich layer near the SiOxNy-Si interface. However the nitrogen-ri h layer is not observed in the case of cold-wall process. The maximum flat-band voltage for the SiO2 films nitrided by the hot-wall process is higher than by the cold-wall process, and the peak value of flat-band voltage for the hot-wall process appears the longer nitridation time than that for the cold-wall process. The SiOxNy-Si interface shift toward the Si substrate for the case of the hot-wall process is larger than that for the cold-wall process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.155-162
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• 1997

Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of $350^{\circ}C$. The resistivity was increased to above $3{\times}10^{6}{\Omega}{\cdot}cm$ with copper doping and vapor oxidation.

• Journal of the Korea Organic Resources Recycling Association
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• v.17 no.4
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• pp.29-35
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• 2009

Pyrolysis is recently used as one of alternative methods of animal waste treatment. In this study bio-oil was produced at $550^{\circ}C$ in an auger reactor through pyrolysis process. Two pig waste mixtures were used, pig feces mixed with rice husks and pig feces mixed with sawdust. The main compositions of hemicellulose, lignin, cellulose, protein, and fat were analyzed chemically. Based on the main composition results obtained, the contents of holocellulose (the sum of hemicellulose and cellulose) and lignin had a significant positive effect on bio-oil production, and there was a significant negative effect of ash content on bio-oil yield. The interactions between the different feedstocks were evaluated, and it was concluded that the interaction between pig feces and rice husks was minimal, whereas the interaction between pig feces and sawdust was significant.