• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.118-123
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• 2001

For multi-carrier communication system, power amplifier generate intermodulation products caused by their nonlinear characteristics. Intermodulation products arised around the carrier frequency cannot be filtered out, operate as noise source for tile adjacent channel and thus degrades the quality of communication. In this paper, the 1850MHz-band RF linear power amplifier has been designed and fabricated with feedforward loop. The error signal loop consists of several key components such as phase shifter and attenuator, subtracter. The proposed Linearizer was tested with two-tone signals separated 10MHz apart at the center frequency of 1850MHz. The experimental results show C/I improvement by 14.5${\~}$20dB over 15dB dynamic range(33${\~}$47.8dBm) which gave IMD of 53.25${\~}$59dBc for the designed LPA.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.655-657
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• 2004

채널 레벨 컨트롤러는 DWDM(Dense Wavelength Division Multiplexing) 방식의 OXC(Optical Cross Connect), OADM(Optical Add/Drop Multiplexer), 광 증폭기(EDFA : Erbium Doped Fiber Amplifier) 둥의 시스템에서 채널별 광신호의 세기를 조절하여 시스템의 신뢰성을 높이는 중요한 제어기다. 본 논문에서는 12채널 VOA(Variable Optical Attenuator) 4개를 사용하여 40채널의 광 신호 레벨을 제어할 수 있는 컨트롤러를 구현하였다. 각 채널의 광 신호 레벨을 제어하는데 하나의 마이크로 프로세서가 5개의 채널을 제어하고 총 8개의 마이크로프로세서로 40채널을 분산 제어하도록 구성하였다. 또한 외부와 통신을 하고 사용자로부터의 명령을 각각의 마이크로프로세서에 전달하기 위한 마이크로프로세서를 추가하였으며, 출력되는 광 신호의 세기를 측정하여 VOA를 제어하는데 있어서 VOA 출력에서 바로 PD(Photo Detector)로 입력하여 AWC(Arrayed Waveguide Grating) 출력에서 광 신호를 다시 분파하여 PD에 입력하는 번거로움을 개선하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.212-214
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• 2002

Basically, OCT use the interference effect of Michelson interferometer. The receiver noise of interferometer is a important fact to improve the system performance. To improve the system performance for high resolution image processing, we design a interferometer topology adding the attenuator to the reference arm. In this paper, we design the receiver noise parameter and computer simulation. In this results, SNR of the new topology system is improved 5dB compare to standard interferometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.337-338
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• 2006

The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.9
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• pp.103-110
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• 2004

Pressure ripples yield noise and vibration in hydraulic pipelines, which are inevitably generated by a fluctuation of flow rate in the pump mechanism, and such noise and vibration deteriorate the stability and accuracy of hydraulic systems. To reduce the pressure ripples, accumulator and hydraulic attenuator are normally used. In this study, parallel pipeline with a bent-axis piston pump is introduced to a hydraulic pipe system as a method for reducing the pressure ripples and using the transfer matrix method, the dynamic characteristics of the pipe system are analysed and compared with experimental results. The results show that the phase interference using parallel pipeline with a bent-axis piston pump is effective to reduce the pressure ripples in the hydraulic pipelines.

• Current Optics and Photonics
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• v.7 no.1
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• pp.83-89
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• 2023

This study reports a structure, based on a liquid-crystal (LC) core optical waveguide, for the switchable spatial control of linearly polarized light. The refractive indices of both left and right isotropic claddings in the waveguide are between the two principal-axis indices of the nematic liquid crystal (NLC). Numerical simulations demonstrate that the proposed structure can be operated in transmission mode or as an attenuator by controlling the on and off states of the applied voltage, whether the initial excitation is transverse electric (TE) linearly polarized light or transverse magnetic (TM) linearly polarized light. The design can also be used as an integrated optical polarizer, since only one type of linearly polarized light is always permitted to pass through the core zone of the NLC optical waveguide.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.808-820
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• 2014

In this paper, we fabricated two on-wafer type DUT(Device-Under-Test)s; a 10-dB attenuator and an amplifier using commercially available MMIC and we proposed the measurement method of the noise parameters for the two fabricated DUTs. Since the 10-dB attenuator DUT is a passive device, its noise parameters can be accurately determined when its S-parameters are measured. In the case of the amplifier DUT, its noise parameters are available in the datasheet. Hence, the measured noise parameters using the proposed method can be assessed by comparing with the known noise parameters. The noise parameter measurement method having been presented by the authors requires the S-parameters of the 8-port network used in the measurement and limited to coaxial type DUTs. When on-wafer probes are included in the 8-port network, the 8-port S-parameters requires the measurements with different kinds of connectors. In this paper, we obtained the 8-port S-parameters using the Smart-Cal function in the network analyzer. The measured noise parameters shows about ${\pm}0.2dB$ fluctuations for $NF_{min}$. Other noise parameters with the frequency change show good agreement with the expected results.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.90-95
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• 2014

This paper presents a VHF/UHF-band variable gain low noise amplifier for multi-standard mobile TV tuners. A proposed VHF-band variable gain amplifier is composed of a resistive shunt-feedback low noise amplifier to remove external matching components, a single-to-differential amplifier with input PMOS transcoductors to improve low frequency noise performance, a variable shunt-feedback resistor and an attenuator to control variable gain range. A proposed UHF-band variable gain amplifier consists of a narrowband low noise amplifier with capacitive tuning to improve noise performance and interference rejection performance, a single-to-differential with gm gain control and an attenuator to adjust gain control range. The proposed VHF-band and UHF-band variable gain amplifier were designed in a $0.18{\mu}m$ RF CMOS technology and draws 22 mA and 17 mA from a 1.8 V supply voltage, respectively. The designed VHF-band and UHF-band variable gain amplifier show a voltage gain of 27 dB and 27 dB, a noise figure of 1.6-1.7 dB and 1.3-1.7 dB, OIP3 of 13.5 dBm and 16 dBm, respectively.