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http://dx.doi.org/10.5515/KJKIEES.2014.25.8.808

Measurement of the Noise Parameters of On-Wafer Type DUTs Using 8-Port Network  

Lee, Dong-Hyun (Department of Radio Science and Engineering, Chungnam National University)
Ahmed, Abdule-Rahman (Department of Radio Science and Engineering, Chungnam National University)
Lee, Sung-Woo (Department of Radio Science and Engineering, Chungnam National University)
Yeom, Kyung-Whan (Department of Radio Science and Engineering, Chungnam National University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.25, no.8, 2014 , pp. 808-820 More about this Journal
Abstract
In this paper, we fabricated two on-wafer type DUT(Device-Under-Test)s; a 10-dB attenuator and an amplifier using commercially available MMIC and we proposed the measurement method of the noise parameters for the two fabricated DUTs. Since the 10-dB attenuator DUT is a passive device, its noise parameters can be accurately determined when its S-parameters are measured. In the case of the amplifier DUT, its noise parameters are available in the datasheet. Hence, the measured noise parameters using the proposed method can be assessed by comparing with the known noise parameters. The noise parameter measurement method having been presented by the authors requires the S-parameters of the 8-port network used in the measurement and limited to coaxial type DUTs. When on-wafer probes are included in the 8-port network, the 8-port S-parameters requires the measurements with different kinds of connectors. In this paper, we obtained the 8-port S-parameters using the Smart-Cal function in the network analyzer. The measured noise parameters shows about ${\pm}0.2dB$ fluctuations for $NF_{min}$. Other noise parameters with the frequency change show good agreement with the expected results.
Keywords
Noise Parameters; On-Wafer Measurement; 6-Port Network;
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