• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Nuclear Engineering and Technology
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• v.4 no.3
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• pp.214-222
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• 1972

In the optic,11 grade LiF crystal, the electron traps corresponding to the thermoluminescence(abbreviated to TL) glow peak develop as irradiation dose is increased. Originally the electron trap of the crystal has two levels but as the dose reaches to the order of 10$^4$rontgen, it attains five levels as observed in the TL glow curves. The five trap depths are determined from the glow peak temperatures for two different heating rates, $\theta$=6.6$^{\circ}C$/sec and 3.4$^{\circ}C$/sec. The electron trap depths have the following values E$_1$=0.79 eV, E$_2$=0.93 eV, E$_3$=1.02 eV, E$_4$=1.35 eV, E$_{5}$=1.69eV. The special feature of thermoluminescence of optical grade LiF is that the traps, except E$_1$and E$_2$corresponding to 12$0^{\circ}C$ glow peak and 15$0^{\circ}C$ glow peak for $\theta$=6.6$^{\circ}C$/sec, have severe thermal instability, namely E$_3$, E$_4$and E$_{5}$ levels disappear during bleaching process. These defects in the optical grade LiF crystal seem annealed out during the course of TL measurement. The fresh or long time unused LiF(Mg) crystal shows only two glow peaks at 17$0^{\circ}C$ and 23$0^{\circ}C$ for $\theta$=6.6$^{\circ}C$/sec, but upon sensitization with r-ray irradiation, it converts to the six glow peak state. The four electron traps, E$_1$, E$_2$, E$_3$, and E$_{6}$ created by r-ray irradiation and corresponding to the glow peaks at T=10$0^{\circ}C$ 13$0^{\circ}C$, 15$0^{\circ}C$ and 29$0^{\circ}C$ are stable and not easily annealed out thermally, The sensitization essentially required to LiF(Mg) dosimeter is to give the crystal the stable six levels in the electron trap. In optical grade LiF, the plot between logarithm of total TL output versus logarithm of r-ray dose gives more supra-linear feature than that of LiF(Mg). However, if one takes the height of 12$0^{\circ}C$ glow peak(S=6.6$^{\circ}C$/sec), instead of the total TL output, the curve becomes close to that of LiF(Mg).

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.