• Title/Summary/Keyword: atomic step

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The Step Complexity Measure - Its Meaning and Applications

  • Park, Jinkyun;Wondea Jung;Kim, Jaewhan;Jaejoo Ha
    • Nuclear Engineering and Technology
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    • v.35 no.1
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    • pp.80-90
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    • 2003
  • According to related studies, it was revealed that the procedural deviation plays a significant role in initiating accidents or incidents. This means that, to maximize safety, it is indispensable to be able to answer the question of “why the operators deviate from procedures\ulcorner” In this study, the SC (step complexity) measure is introduced to investigate its applicability for studying the procedural deviation, since it was shown that the change of the operators' performance is strongly correlated with the change of SC scores. This means that the SC measure could play an important role for researches related to the procedural deviation, since it is strongly believed that complicated procedures would affect both the operator' performance and the possibility of the procedural deviation. Thus, to ensure this expectation, the meaning of the SC measure is investigated through brief explanations including the necessity, theoretical basis and verification activities of the SC measure. As a result, it is confirmed that the SC measure can be used to explain the change of the operators' performance due to the task complexity implied by procedures. In addition, it seems that the SC measure nay be useful for various purposes, particularly for scrutinizing the relationship between the procedural deviation and complicated procedures.

Development of advanced rigorous two-step code system for evaluation of radioactive waste with high-resolution activation calculation

  • Kim, Do Hyun;Kim, Jiseok;Lee, Han Rim;Sun, Gwang Min;Shin, Chang Ho;Kim, Jong Kyung
    • Nuclear Engineering and Technology
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    • v.53 no.6
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    • pp.2011-2018
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    • 2021
  • Nowadays, evaluation of amounts and distributions of radioactive waste is an important preparatory step in the process of nuclear reactor decommissioning. For tentative estimation of radioactive waste, a cell-based rigorous 2 step (R2S) method usually is used; however, a poor resolution caused by the averaged flux and spectrum in a cell is still a great challenge because of leading to underestimated or overestimated results. To overcome the poor resolution, several systems were introduced. Neither system, however, provides any function for evaluation of radioactive waste amount and distribution. Thus, it is additionally required to classify radioactive waste based on the results of activation calculation. In this study, the advanced R2S (AR2S) system was developed. To verify the performance of the system, its results for a verification problem were compared with those of the cell-based R2S method. The results showed good agreement, which is to say, within 2.0% relative error. Also, several characteristics of fine/coarse mesh were analyzed. To demonstrate the performance of the AR2S system, the radioactive waste from the Japan Power Demonstration Reactor (JPDR) was estimated, and the result indicated a high-resolution distribution. Therefore, it is expected that the AR2S system will prove useful for precise evaluation of radioactive waste.

Manufacturing Process Effect on Strength and Corrosion Properties of Zr Alloys for Fuel Guide Tube (핵연료 안내관용 지르코늄 합금의 강도 및 부식 성능에 미치는 제조공정 영향)

  • Kim, Hyun-Gil;Kim, Il-Hyun;Choi, Byung-Kwan;Park, Sang-Yoon;Park, Jeong-Yong;Jeong, Yong-Hwan
    • Korean Journal of Metals and Materials
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    • v.47 no.12
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    • pp.852-859
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    • 2009
  • The manufacturing process of zirconium alloys is an import factor to increase their strength and corrosion resistance. In order to find an improved manufacturing process of zirconium alloys in both Zr-1Nb-1Sn-0.1Fe (Alloy-A) and Zr-1.5Nb-0.4Sn-0.2Fe-0.1Cr (HANA-4) for fuel guide tubes, sheet samples were prepared by applying two- and three-step processes that were controlled by an annealing and reduction condition. The mechanical strength and corrosion resistance of both alloys were increased by applying the twostep process rather than the three-step process. From a matrix analysis using TEM, the property improvement is related to the decrease of the precipitate mean diameter with an application of the two-step process. In a comparison of the strength and corrosion properties between Alloy-A and HANA-4, the performance of HANA-4 was feasible for application to fuel guide tubes.

Measurement of inconvenience, human errors, and mental workload of simulated nuclear power plant control operations

  • Oh, I.S.;Sim, B.S.;Lee, H.C.;Lee, D.H.
    • Proceedings of the ESK Conference
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    • 1996.10a
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    • pp.47-55
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    • 1996
  • This study developed a comprehensive and easily applicable nuclear reactor control system evaluation method using reactor operators behavioral and mental workload database. A proposed control panel design cycle consists of the 5 steps: (1) finding out inconvenient, erroneous, and mentally stressful factors for the proposed design through evaluative experiments, (2) drafting improved design alternatives considering detective factors found out in the step (1), (3) comparative experiements for the design alternatives, (4) selecting a best design alternative, (5) returning to the step (1) and repeating the design cycle. Reactor operators behavioral and mental workload database collected from evaluative experiments in the step (1) and comparative experiments in the step (3) of the design cycle have a key roll in finding out defective factors and yielding the criteria for selection of the proposed reactor control systems. The behavioral database was designed to include the major informations about reactor operators' control behaviors: beginning time of operations, involved displays, classification of observational behaviors, dehaviors, decisions, involved control devices, classification of control behaviors, communications, emotional status, opinions for man-machine interface, and system event log. The database for mental workload scored from various physiological variables-EEG, EOG, ECG, and respir- ation pattern-was developed to indicate the most stressful situation during reactor control operations and to give hints for defective design factors. An experimental test for the evaluation method applied to the Compact Nuclear Simulator (CNS) installed in Korea Atomic Energy Research Institute (KAERI) suggested that some defective design factors of analog indicators should be improved and that automatization of power control to a target level would give relaxation to the subject operators in stressful situation.

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Characteristics of TaN Film as to Cu Barrier by PAALD Method (PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성)

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.2
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    • pp.5-8
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    • 2003
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

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PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.14-19
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    • 2002
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

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Spectroscopic Studies on Pu(III) Hydrolysis Under Reducing and Elevated Temperatures Conditions

  • Cho, Hye-Ryun;Kim, Hee Kyung;Jung, Euo Chang;Cha, Wansik
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2017.10a
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    • pp.137-138
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    • 2017
  • The spectroscopic reference data for plutonium at different temperatures are necessary information for the chemical speciation and evaluation of thermodynamic data at elevated temperature. This work is the initial step to extend research activities for understanding the plutonium chemistry in aquatic solutions at high temperature. The hydrolysis of Pu(III) and the solubility of Pu(III) hydroxide at the elevated temperature will be discussed.

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Characteristics of ZnO Thin Films of FBAR using ALD and RF Magnetron Sputtering (ALD와 RF 마그네트론 스퍼터링을 이용한 FBAR 소자의 ZnO 박막증착 및 특성)

  • Shin, Young-Hwa;Kwon, Sang-Jik;Yoon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.164-168
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    • 2005
  • Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.